公开(公告)号：US20180033626A1

公开(公告)日：2018-02-01

申请号：US15340636

申请日：2016-11-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Teng Liao ,  Yi-Wei Chiu ,  Chih Hsuan Cheng ,  Li-Te Hsu

IPC分类号： H01L21/225 ,  H01L21/324 ,  H01L29/08 ,  H01L21/762 ,  H01L29/66 ,  H01L21/306 ,  H01L21/8234

CPC分类号： H01L21/2255 ,  H01L21/76224 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/823892 ,  H01L29/0847 ,  H01L29/66803 ,  H01L29/785

摘要： A method includes etching a semiconductor substrate to form a first trench and a second trench. A remaining portion of the semiconductor substrate is left between the first trench and the second trench as a semiconductor region. A doped dielectric layer is formed on sidewalls of the semiconductor region and over a top surface of the semiconductor region. The doped dielectric layer includes a dopant. The first trench and the second trench are filled with a dielectric material. An anneal is then performed, and a p-type dopant or an n-type dopant in the doped dielectric layer is diffused into the semiconductor region to form a diffused semiconductor region.