公开(公告)号：US20140377947A1

公开(公告)日：2014-12-25

申请号：US14374879

申请日：2013-01-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tadahiro Ishizaka ,  Atsushi Gomi ,  Kenji Suzuki ,  Tatsuo Hatano ,  Yasushi Mizusawa

IPC: H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/16 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28556 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76843 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru3(CO)12 gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

Abstract translation: 当在SiCOH膜中形成凹部时，从膜中除去C以形成损伤层。 如果通过氢氟酸等去除损伤层，则表面变得疏水。 通过供给硼化合物气体，硅化合物气体或含有三甲基铝的气体到SiCOH膜，B，Si或Al被吸附在SiCOH膜上。 这些原子与Ru结合，容易在SiCOH膜上形成Ru膜。 Ru膜使用例如Ru 3（CO）12气体和CO气体形成。 铜填充在凹部中，并且通过进行CMP处理形成上侧布线结构。