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公开(公告)号:US20110235390A1
公开(公告)日:2011-09-29
申请号:US12729856
申请日:2010-03-23
申请人: Tymon Barwicz , Keith A. Jenkins , Supratik Guha
发明人: Tymon Barwicz , Keith A. Jenkins , Supratik Guha
CPC分类号: G11C11/404 , G11C13/0007 , H01L28/40 , H01L49/003
摘要: A memory device and a method of forming the same are provided. The memory device includes a substrate; a set of electrodes disposed on the substrate; a dielectric layer formed between the set of electrodes; and a transition metal oxide layer formed between the set of electrodes, the transition metal oxide layer configured to undergo a metal-insulator transition (MIT) to perform a read or write operation.
摘要翻译: 提供了一种存储器件及其形成方法。 存储器件包括衬底; 设置在基板上的一组电极; 形成在该组电极之间的电介质层; 以及形成在所述电极组之间的过渡金属氧化物层,所述过渡金属氧化物层被配置为经历金属 - 绝缘体转变(MIT)以执行读取或写入操作。
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公开(公告)号:US07853108B2
公开(公告)日:2010-12-14
申请号:US11966402
申请日:2007-12-28
申请人: Milos Popovic , Tymon Barwicz
发明人: Milos Popovic , Tymon Barwicz
CPC分类号: G02B6/1223 , G02B6/107 , G02B6/12007 , G02F1/0147 , G02F1/3133 , G02F2001/212 , G02F2201/063 , G02F2201/125 , G02F2203/15 , G02F2203/585 , H04J14/021 , H04Q2213/1301
摘要: An optical waveguide having a core region with a substantially rectangular cross-section with a selected aspect ratio of width to height. Embodiments include devices incorporating the optical waveguide and methods for using the optical waveguide.
摘要翻译: 一种光波导,其具有具有基本上矩形横截面的芯区域,具有选定的宽度与高度的纵横比。 实施例包括结合光波导的器件和使用光波导的方法。
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公开(公告)号:US20100255680A1
公开(公告)日:2010-10-07
申请号:US12417936
申请日:2009-04-03
申请人: Tymon Barwicz , Guy Cohen , Lidija Sekaric , Jeffrey Sleight
发明人: Tymon Barwicz , Guy Cohen , Lidija Sekaric , Jeffrey Sleight
IPC分类号: H01L21/306
CPC分类号: H01L21/02238 , B82Y10/00 , B82Y30/00 , H01L21/02255 , H01L21/30604 , H01L29/0665 , H01L29/0676 , H01L29/42392 , H01L29/775 , H01L29/78696
摘要: Techniques for fabricating nanowire-based devices are provided. In one aspect, a method for fabricating a semiconductor device is provided comprising the following steps. A wafer is provided having a silicon-on-insulator (SOI) layer over a buried oxide (BOX) layer. Nanowires and pads are etched into the SOI layer to form a ladder-like structure wherein the pads are attached at opposite ends of the nanowires. The BOX layer is undercut beneath the nanowires. The nanowires and pads are contacted with an oxidizing gas to oxidize the silicon in the nanowires and pads under conditions that produce a ratio of a silicon consumption rate by oxidation on the nanowires to a silicon consumption rate by oxidation on the pads of from about 0.75 to about 1.25. An aspect ratio of width to thickness among all of the nanowires may be unified prior to contacting the nanowires and pads with the oxidizing gas.
摘要翻译: 提供了制造基于纳米线的器件的技术。 一方面,提供一种制造半导体器件的方法,包括以下步骤。 提供了在掩埋氧化物(BOX)层上方具有绝缘体上硅(SOI)层的晶片。 将纳米线和焊盘蚀刻到SOI层中以形成阶梯状结构,其中焊盘附着在纳米线的相对端。 BOX层在纳米线下面被切下。 纳米线和焊盘与氧化气体接触,以在通过氧化在纳米线上产生硅消耗速率与硅消耗速率之比的条件下,在纳米线和焊盘中氧化硅,焊盘上的氧化从约0.75降至 约1.25。 在使纳米线和焊盘与氧化气体接触之前,可以统一所有纳米线中的宽度与厚度的纵横比。
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公开(公告)号:US20060197959A1
公开(公告)日:2006-09-07
申请号:US11353538
申请日:2006-02-14
IPC分类号: G01C19/66
CPC分类号: G02B6/29343 , G01C19/66 , G02B6/12007 , G02B6/29361
摘要: A coupled resonator includes a plurality of resonators such that at least one of the resonators is modified so as to adjust the resonant frequency associated with the coupled resonator.
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