公开(公告)号：US20190088875A1

公开(公告)日：2019-03-21

申请号：US16195765

申请日：2018-11-19

Applicant: ARM Ltd.

Inventor： Carlos Alberto Paz de Araujo ,  Lucian Shifren

IPC: H01L49/00 ,  H01L27/08 ,  H01L29/93 ,  H01L45/00 ,  H01L27/24 ,  H01L29/861 ,  H01L29/24

CPC classification number: H01L49/003 ,  H01L27/0808 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L29/24 ,  H01L29/861 ,  H01L29/93 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: Subject matter disclosed herein may relate to programmable fabrics including correlated electron switch devices.

公开(公告)号：US09960345B2

公开(公告)日：2018-05-01

申请号：US15427500

申请日：2017-02-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Ching-Tzu Chen ,  Joel D. Chudow

IPC: H01L43/06 ,  H01L29/06 ,  H01L49/00 ,  H01L29/16 ,  H01L29/24 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

CPC classification number: H01L43/065 ,  G01N27/125 ,  H01L27/22 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/1606 ,  H01L29/24 ,  H01L43/02 ,  H01L43/04 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01L43/14 ,  H01L49/003

Abstract: A technique relates to a semiconductor device. First metal contacts are formed on top of a substrate. The first metal contacts are arranged in a first direction, and the first metal contacts are arranged such that areas of the substrate remain exposed. Insulator pads are positioned at predefined locations on top of the first metal contacts, such that the insulator pads are spaced from one another. Second metal contacts are formed on top of the insulator pads, such that the second metal contacts are arranged in a second direction different from the first direction. The first and second metal contacts sandwich the insulator pads at the predefined locations. Surface-sensitive conductive channels are formed to contact the first metal contacts and the second metal contacts. Four-terminal devices are defined by the surface-sensitive conductive channels contacting a pair of the first metal contacts and contacting a pair of the metal contacts.

公开(公告)号：US20180025767A1

公开(公告)日：2018-01-25

申请号：US15697129

申请日：2017-09-06

Applicant: Richard L. Sandor

Inventor： Richard L. Sandor

IPC: G11C11/404 ,  G11C13/00 ,  H01L49/02 ,  H01L49/00

CPC classification number: G06Q40/06 ,  G06Q40/04 ,  G11C11/404 ,  G11C13/0007 ,  H01L28/40 ,  H01L49/003 ,  H04W4/60

Abstract: A method and system for determining market estimates with market based measures. Market estimates for a set of time periods are received from plural qualified institutions that have agreed to a pre-determined set of regulations to participate in establishing, conducting business and processing transactions based on calculated market term estimates. A set of market term estimates (e.g., LIBOR, interest rates, etc.) is calculated in real-time for each time period in the set of time periods. The calculated set of market term estimates is sent to qualified institutions. The qualified institutions are required to conduct business and make transactions based on the calculated set of market term estimates. The calculated set of market term estimates is created and used on both cloud communication networks and non-cloud communications networks.

公开(公告)号：US09799828B1

公开(公告)日：2017-10-24

申请号：US15284102

申请日：2016-10-03

Applicant: Sandia Corporation

Inventor： Peter Anand Sharma

IPC: H01L49/00 ,  H01L31/113 ,  H01L31/032 ,  H01L31/0352

CPC classification number: H01L49/003 ,  H01L31/032 ,  H01L31/035281 ,  H01L31/1136

Abstract: Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

公开(公告)号：US09741832B2

公开(公告)日：2017-08-22

申请号：US15122402

申请日：2014-03-28

Applicant: INTEL CORPORATION

Inventor： Uygar Avci ,  Dmitri Nikonov ,  Ian Young

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/10 ,  H01L29/08 ,  H01L29/24 ,  H01L29/786 ,  H01L49/00 ,  H01L29/423

CPC classification number: H01L29/66977 ,  H01L25/16 ,  H01L29/0847 ,  H01L29/1025 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/66356 ,  H01L29/66969 ,  H01L29/7391 ,  H01L29/78648 ,  H01L49/003

Abstract: Tunneling field effect transistors (TFETs) including a variable bandgap channel are described. In some embodiments, one or more bandgap characteristics of the variable bandgap channel may be dynamically altered by at least one of the application or withdrawal of a force, such as a voltage or electric field. In some embodiments the variable bandgap channel may be configured to modulate from an ON to an OFF state and vice versa in response to the application and/or withdrawal of a force. The variable bandgap channel may exhibit a bandgap that is smaller in the ON state than in the OFF state. As a result, the TFETs may exhibit one or more of relatively high on current, relatively low off current, and sub-threshold swing below 60 mV/decade.

公开(公告)号：US09595673B2

公开(公告)日：2017-03-14

申请号：US14355384

申请日：2012-10-26

Applicant: Electronics and Telecommunications Research Institute

Inventor： Hyun-Tak Kim ,  Bongjun Kim ,  Jeong Yong Choi ,  Jong Chan Park

IPC: H02H9/00 ,  H01L49/00

CPC classification number: H01L49/003

Abstract: The inventive concept shows the embodiment of t-switch which is a MIT 3-terminal device based on a Hole-driven MIT theory and a technology for removing an ESD noise signal which is one of applications of the t-switch. The t-switch includes three terminals of Inlet, Outlet and Control, and a metal-insulator transition (MIT) occurs at an Outlet layer by a current flowing through the Control terminal. In the t-switch, a high resistor is connected to the Control terminal and thereby an ESD noise signal of high voltage flows through the Inlet-Outlet without damaging the device.

Abstract translation: 本发明的概念示出了作为基于空穴驱动MIT理论的MIT 3端子装置和用于去除作为t开关的应用之一的ESD噪声信号的技术的t开关的实施例。 t开关包括三个入口，出口和控制端子，并且通过流过控制端子的电流在出口层处发生金属 - 绝缘体转变（MIT）。 在t开关中，高电阻连接到控制端子，从而高电压的ESD噪声信号流过入口插座而不会损坏器件。

公开(公告)号：US20160133730A1

公开(公告)日：2016-05-12

申请号：US14876006

申请日：2015-10-06

Applicant: International Business Machines Corporation

Inventor： Mohit Bajaj ,  Suresh Gundapaneni ,  Aniruddha Konar ,  Kota V.R.M. Murali ,  Edward J. Nowak

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/66977 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/511 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7855 ,  H01L29/78645 ,  H01L29/78648 ,  H01L49/003

Abstract: Embodiments of the present disclosure provide an integrated circuit (IC) structure, which can include: a doped semiconductor layer having a substantially uniform doping profile; a first gate structure positioned on the doped semiconductor layer; and a second gate structure positioned on the doped semiconductor layer, the second gate structure including a metal-insulator transition material and a gate dielectric layer separating the metal-insulator transition material from the doped semiconductor layer.

公开(公告)号：US08987693B2

公开(公告)日：2015-03-24

申请号：US13570390

申请日：2012-08-09

Applicant: Tymon Barwicz ,  Keith A. Jenkins ,  Supratik Guha

Inventor： Tymon Barwicz ,  Keith A. Jenkins ,  Supratik Guha

IPC: H01L47/00 ,  G11C11/404 ,  H01L49/02 ,  G11C13/00 ,  H01L49/00

CPC classification number: G11C11/404 ,  G11C13/0007 ,  H01L28/40 ,  H01L49/003

Abstract: A method of operating a memory device having a dielectric material layer, a transition metal oxide layer and a set of electrodes each formed over a substrate, includes applying a voltage across the set of electrodes producing an electric field across the transition metal oxide layer enabling the transition metal oxide layer to undergo a metal-insulation transition (MIT) to perform a read or write operation on memory device.

Abstract translation: 一种操作具有介电材料层，过渡金属氧化物层和一组电极的存储器件的方法，每个形成在衬底上，包括在整个电极组上施加电压，从而在过渡金属氧化物层上产生电场，从而能够 过渡金属氧化物层进行金属绝缘转变（MIT）以对存储器件执行读或写操作。

公开(公告)号：US20140266391A1

公开(公告)日：2014-09-18

申请号：US13829690

申请日：2013-03-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stuart Stephen Papworth Parkin ,  Mahesh G. Samant

IPC: H03K17/51

CPC classification number: H01L49/003 ,  H01L45/04 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/146 ,  H01L51/055

Abstract: Electrolyte gating with ionic liquids is a powerful tool for inducing conducting phases in correlated insulators. An archetypal correlated material is VO2 which is insulating only at temperatures below a characteristic phase transition temperature. We show that electrolyte gating of epitaxial thin films of VO2 suppresses the metal-to-insulator transition and stabilizes the metallic phase to temperatures below 5 K even after the ionic liquid is completely removed. We provide compelling evidence that, rather than electrostatically induced carriers, electrolyte gating of VO2 leads to the electric field induced creation of oxygen vacancies, and the consequent migration of oxygen from the oxide film into the ionic liquid.

Abstract translation: 用离子液体进行电解质浇注是在相关绝缘体中诱导导电相的强大工具。 原型相关材料是仅在低于特征相变温度的温度下绝缘的VO2。 我们显示VO2的外延薄膜的电解质门控抑制了金属与绝缘体的转变，并且即使在离子液体被完全去除之后也将金属相稳定在低于5K的温度。 我们提供令人信服的证据，而不是静电诱导的载体，VO2的电解质门控导致电场引起氧空位的产生，并且随之而来的氧从氧化膜迁移到离子液体中。

公开(公告)号：US20140253183A1

公开(公告)日：2014-09-11

申请号：US14198987

申请日：2014-03-06

Applicant: Kabushiki Kaisha Toshiba

Inventor： Stuart N. HOLMES

IPC: H01L29/24 ,  H01L29/778 ,  H03K3/01 ,  H01L29/66

CPC classification number: H01L29/24 ,  H01L29/66431 ,  H01L29/778 ,  H01L49/003 ,  H03K3/01

Abstract: A semi-metallic structure, comprising an LaAlO3—SrTiO3 heterostructure (19), said LaAlO3—SrTiO3 heterostructure comprising a two-dimensional hole gas (21) and a two-dimensional electron gas (23).

Abstract translation: 包含LaAlO3-SrTiO3异质结构（19）的半金属结构，所述LaAlO3-SrTiO3异质结构包含二维空穴气体（21）和二维电子气体（23）。