公开(公告)号：US20100153646A1

公开(公告)日：2010-06-17

申请号：US12332669

申请日：2008-12-11

申请人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Alan Xuguang Wang

发明人： Yiran Chen ,  Hai Li ,  Harry Hongyue Liu ,  Alan Xuguang Wang

IPC分类号： G06F12/08 ,  G06F12/00

CPC分类号： G06F12/0897 ,  G06F12/0811 ,  G06F2212/2024 ,  G06F2212/222 ,  Y02D10/13

摘要： Various embodiments of the present invention are generally directed to an apparatus and method for non-volatile caching of data in a memory hierarchy of a data storage device. In accordance with some embodiments, a pipeline memory structure is provided to store data for use by a controller. The pipeline has a plurality of hierarchical cache levels each with an associated non-volatile filter cache and a non-volatile victim cache. Data retrieved from each cache level are respectively promoted to the associated non-volatile filter cache. Data replaced in each cache level are respectively demoted to the associated non-volatile victim cache.

摘要翻译： 本发明的各种实施例一般涉及用于数据存储设备的存储器层级中的数据的非易失性缓存的装置和方法。 根据一些实施例，提供流水线存储器结构以存储要由控制器使用的数据。 流水线具有多个层次化的高速缓存级别，每一级具有关联的非易失性过滤器高速缓存和非易失性的受害者高速缓存。 从每个缓存级别检索的数据分别被提升到相关联的非易失性过滤器高速缓存。 每个缓存级别中替换的数据分别降级到相关的非易失性缓存缓存。

公开(公告)号：US20100091546A1

公开(公告)日：2010-04-15

申请号：US12251788

申请日：2008-10-15

申请人： Hongyue Liu ,  Xuguang Wang ,  Yong Lu ,  Yiran Chen

发明人： Hongyue Liu ,  Xuguang Wang ,  Yong Lu ,  Yiran Chen

IPC分类号： G11C17/02 ,  G11C11/409 ,  G11C11/02

CPC分类号： G11C17/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： One time programmable memory units include a magnetic tunnel junction cell electrically coupled to a bit line and a word line. The magnetic tunnel junction cell is pre-programmed to a first resistance state, and is configured to switch only from the first resistance state to a second resistance state by passing a voltage across the magnetic tunnel junction cell. In some embodiments, a transistor is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. In other embodiments, a device having a rectifying switching characteristic, such as a diode or other non-ohmic device, is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. Methods of pre-programming the one time programmable memory units and reading and writing to the units are also disclosed.

摘要翻译： 一次可编程存储器单元包括电耦合到位线和字线的磁性隧道结单元。 磁性隧道结单元被预编程为第一电阻状态，并且被配置为仅通过使磁性隧道结单元电流通过电压而从第一电阻状态切换到第二电阻状态。 在一些实施例中，晶体管电耦合在磁性隧道结单元与字线或位线之间。 在其他实施例中，具有整流开关特性的器件，例如二极管或其它非欧姆器件，电耦合在磁性隧道结单元与字线或位线之间。 还公开了对一次可编程存储器单元进行预编程以及读取和写入单元的方法。

公开(公告)号：US07933146B2

公开(公告)日：2011-04-26

申请号：US12415243

申请日：2009-03-31

申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

IPC分类号： G11C11/00

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3286 ,  Y10S977/935

摘要： Electronic devices that include (i) a magnetization controlling structure; (ii) a tunnel barrier structure; and (iii) a magnetization controllable structure including: a first polarizing layer; and a first stabilizing layer, wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure, wherein the electronic device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the electronic device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization in order to obtain one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current.

摘要翻译： 电子设备，其包括（i）磁化控制结构; （ii）隧道屏障结构; 和（iii）可磁化控制结构，包括：第一偏振层; 以及第一稳定层，其中所述隧道势垒结构在所述磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述隧道势垒结构之间，其中所述电子器件具有两个稳定的整体磁性构造， 并且其中施加到所述电子器件的第一单极电流将导致所述磁化控制结构的取向反转其取向，并且施加到所述电子器件的第二单极电流将导致所述磁化可控结构切换其磁化，以获得 两个稳定的整体磁性配置，其中第二单极性电流具有小于第一单极电流的幅度。

公开(公告)号：US07933137B2

公开(公告)日：2011-04-26

申请号：US12415257

申请日：2009-03-31

申请人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

发明人： Dimitar V. Dimitrov ,  Olle Gunnar Heinonen ,  Yiran Chen ,  Haiwen Xi ,  Xiaohua Lou

IPC分类号： G11C17/06

CPC分类号： H01L27/224 ,  G11C7/04 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/08

摘要： Non-volatile magnetic random access memory (MRAM) devices that include magnetic flip-flop structures that include a magnetization controlling structure; a first tunnel barrier structure; and a magnetization controllable structure that includes a first polarizing layer; and a first stabilizing layer, wherein the first tunnel barrier structure is between the magnetization controllable structure and the magnetization controlling structure and the first polarizing layer is between the first stabilizing layer and the first tunnel barrier structure, wherein the magnetic flip-flop device has two stable overall magnetic configurations, and wherein a first unipolar current applied to the device will cause the orientation of the magnetization controlling structure to reverse its orientation and a second unipolar current applied to the electronic device will cause the magnetization controllable structure to switch its magnetization so that the device reaches one of the two stable overall magnetic configurations, wherein the second unipolar current has an amplitude that is less than the first unipolar current; a second tunnel barrier structure and a reference layer, wherein the second tunnel barrier structure is between the magnetic flip-flop device and the reference layer. MRAM cells that include such devices and arrays including such cells are also disclosed.

摘要翻译： 包括包含磁化控制结构的磁触发器结构的非易失磁性随机存取存储器（MRAM）器件; 第一隧道屏障结构; 以及包括第一偏振层的可磁化控制结构; 以及第一稳定层，其中所述第一隧道势垒结构在所述可磁化控制结构和所述磁化控制结构之间，并且所述第一偏振层位于所述第一稳定层和所述第一隧道势垒结构之间，其中所述磁性触发器装置具有两个 稳定的整体磁性结构，并且其中施加到器件的第一单极电流将引起磁化控制结构的取向反转其取向，并且施加到电子器件的第二单极电流将导致磁化可控结构切换其磁化，使得 该器件达到两种稳定的总体磁性结构中的一种，其中第二单极性电流的振幅小于第一单极性电流; 第二隧道势垒结构和参考层，其中所述第二隧道势垒结构位于所述磁触发器件和所述参考层之间。 还公开了包括这样的装置和包括这种细胞的阵列的MRAM细胞。

公开(公告)号：US20110026317A1

公开(公告)日：2011-02-03

申请号：US12903305

申请日：2010-10-13

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压。 通过自由磁层施加磁场，形成磁场修正磁隧道结数据单元。 然后通过形成第二位线读取电压的磁场修正磁隧道结数据单元施加第二读取电流，并与第一位线读取电压进行比较，以确定磁性隧道结数据单元的第一电阻状态是否为高 电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US07876604B2

公开(公告)日：2011-01-25

申请号：US12390006

申请日：2009-02-20

申请人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

发明人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/02

CPC分类号： G11C11/1673

摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

公开(公告)号：US07826260B2

公开(公告)日：2010-11-02

申请号：US12372180

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US07813168B2

公开(公告)日：2010-10-12

申请号：US12372190

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

发明人： Wenzhong Zhu ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Xiaobin Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the magnetic tunnel junction data cell forming a magnetic field modified magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过形成磁场修正磁隧道结数据单元的磁隧道结数据单元施加磁场。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将磁场施加到MTJ然后写入期望的电阻状态的方法。

公开(公告)号：US20100110784A1

公开(公告)日：2010-05-06

申请号：US12390006

申请日：2009-02-20

申请人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

发明人： Yuankai Zheng ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Dimitar V. Dimitrov ,  Wenzhong Zhu ,  Yong Lu

IPC分类号： G11C11/14 ,  G11C11/416

CPC分类号： G11C11/1673

摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.

摘要翻译： 公开了自参考读取磁隧道结数据单元方法。 一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。 磁性隧道结数据单元具有第一电阻状态。 读取电压足以切换磁性隧道结数据单元电阻。 该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。 如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

公开(公告)号：US20100103728A1

公开(公告)日：2010-04-29

申请号：US12372180

申请日：2009-02-17

申请人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

发明人： Wenzhong Zhu ,  Yiran Chen ,  Xiaobin Wang ,  Zheng Gao ,  Haiwen Xi ,  Dimitar V. Dimitrov

IPC分类号： G11C11/14 ,  G11C11/416 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/1659 ,  G11C11/1673

摘要： A spin-transfer torque memory apparatus and self-reference read and write assist schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage and storing the first bit line read voltage. A magnetic field is applied through the free magnetic layer the forming a magnetic field modified magnetic tunnel junction data cell, the magnetic field rotates the magnetization orientation of the free magnetic layer without switching a resistance state of the magnetic tunnel junction data cell. Then a second read current is applied thorough the magnetic field modified magnetic tunnel junction data cell forming a second bit line read voltage and the bit line read voltage is stored and compared with the first bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state. Methods of applying a destabilizing magnetic field to the MTJ and then writing the desired resistance state are also disclosed.

摘要翻译： 描述了自旋转移力矩存储装置和自参考读和写辅助方案。 读取自旋转移转矩存储单元的一种自参考方法包括：通过磁性隧道结数据单元施加第一读取电流并形成第一位线读取电压并存储第一位线读取电压。 通过自由磁性层施加磁场，形成磁场修正的磁性隧道结数据单元，磁场使自由磁性层的磁化方向旋转而不转换磁性隧道结数据单元的电阻状态。 然后通过形成第二位线读取电压的磁场修改的磁性隧道结数据单元施加第二读取电流，并且存储位线读取电压并将其与第一位线读取电压进行比较，以确定第一电阻状态 磁隧道结数据单元是高电阻状态或低电阻状态。 还公开了将去稳定磁场施加到MTJ然后写入期望的电阻状态的方法。