公开(公告)号：US20100091546A1

公开(公告)日：2010-04-15

申请号：US12251788

申请日：2008-10-15

申请人： Hongyue Liu ,  Xuguang Wang ,  Yong Lu ,  Yiran Chen

发明人： Hongyue Liu ,  Xuguang Wang ,  Yong Lu ,  Yiran Chen

IPC分类号： G11C17/02 ,  G11C11/409 ,  G11C11/02

CPC分类号： G11C17/02 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： One time programmable memory units include a magnetic tunnel junction cell electrically coupled to a bit line and a word line. The magnetic tunnel junction cell is pre-programmed to a first resistance state, and is configured to switch only from the first resistance state to a second resistance state by passing a voltage across the magnetic tunnel junction cell. In some embodiments, a transistor is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. In other embodiments, a device having a rectifying switching characteristic, such as a diode or other non-ohmic device, is electrically coupled between the magnetic tunnel junction cell and the word line or the bit line. Methods of pre-programming the one time programmable memory units and reading and writing to the units are also disclosed.

摘要翻译： 一次可编程存储器单元包括电耦合到位线和字线的磁性隧道结单元。 磁性隧道结单元被预编程为第一电阻状态，并且被配置为仅通过使磁性隧道结单元电流通过电压而从第一电阻状态切换到第二电阻状态。 在一些实施例中，晶体管电耦合在磁性隧道结单元与字线或位线之间。 在其他实施例中，具有整流开关特性的器件，例如二极管或其它非欧姆器件，电耦合在磁性隧道结单元与字线或位线之间。 还公开了对一次可编程存储器单元进行预编程以及读取和写入单元的方法。

公开(公告)号：US20100096611A1

公开(公告)日：2010-04-22

申请号：US12252645

申请日：2008-10-16

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu

IPC分类号： H01L45/00 ,  H01L27/115 ,  H01L21/336

CPC分类号： H01L45/1233 ,  H01L27/228 ,  H01L27/2454 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/141 ,  H01L45/146 ,  H01L45/147

摘要： A device including a transistor that includes a source region; a drain region; and a channel region, wherein the channel region electrically connects the source region and the drain region along a channel axis; and a memory cell, wherein the memory cell is disposed adjacent the drain region so that the channel axis runs through the memory cell.

摘要翻译： 一种包括晶体管的器件，包括源极区; 漏区; 以及沟道区，其中所述沟道区沿着沟道轴线电连接所述源区和所述漏区; 以及存储单元，其中所述存储单元设置成与所述漏极区相邻，使得所述沟道轴穿过所述存储单元。

公开(公告)号：US07944742B2

公开(公告)日：2011-05-17

申请号：US12861932

申请日：2010-08-24

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US08482971B2

公开(公告)日：2013-07-09

申请号：US13472867

申请日：2012-05-16

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US08199569B2

公开(公告)日：2012-06-12

申请号：US13087517

申请日：2011-04-15

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/14

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US08098516B2

公开(公告)日：2012-01-17

申请号：US12855896

申请日：2010-08-13

申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： A memory array includes a plurality of magnetic tunnel junction cells arranged in a 2 by 2 array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line and each magnetic tunnel junction cell electrically coupled to a transistor. Each magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A first word line is electrically coupled to a gate of first set of two of the transistors and a second word line is electrically coupled to a gate of a second set of two of the transistors. The source line is a common source line for the plurality of magnetic tunnel junctions.

摘要翻译： 存储器阵列包括以2×2阵列排列的多个磁性隧道结单元。 每个磁性隧道结单元电耦合在位线和源极线之间，并且每个磁性隧道结单元电耦合到晶体管。 每个磁性隧道结单元被配置为通过使经过磁性隧道结单元的写入电流通过高电阻状态和低电阻状态之间切换。 第一字线电耦合到第一组晶体管的第一组的栅极，并且第二字线电耦合到第二组二个晶体管的栅极。 源极线是用于多个磁性隧道结的公共源极线。

公开(公告)号：US20110194334A1

公开(公告)日：2011-08-11

申请号：US13087517

申请日：2011-04-15

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/36

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US20100080053A1

公开(公告)日：2010-04-01

申请号：US12242331

申请日：2008-09-30

申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

IPC分类号： G11C11/02 ,  G11C11/409

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： The present disclosure relates to a memory array including a plurality of magnetic tunnel junction cells arranged in an array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line. The magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A transistor is electrically between the magnetic tunnel junction cell and the source line. A word line is electrically coupled to a gate of the transistor. The source line is a common source line for the plurality of magnetic tunnel junctions.

摘要翻译： 本公开涉及包括以阵列布置的多个磁性隧道结单元的存储器阵列。 每个磁性隧道结单元电连接在位线和源极线之间。 磁性隧道结单元通过使通过磁性隧道结单元的写入电流通过而在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结电池和源极线之间。 字线电耦合到晶体管的栅极。 源极线是用于多个磁性隧道结的公共源极线。

公开(公告)号：US20120224417A1

公开(公告)日：2012-09-06

申请号：US13472867

申请日：2012-05-16

申请人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

发明人： Xuguang Wang ,  Yiran Chen ,  Dimitar V. Dimitrov ,  Hongyue Liu ,  Xiaobin Wang

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

摘要： A memory array includes a cross-point array of bit and source lines. A memory is disposed at cross-points of the cross-point array. The memory unit includes a magnetic tunnel junction data cell electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a polarized write current through the magnetic tunnel junction data cell. A transistor is electrically between the magnetic tunnel junction data cell and the bit line or source line and a diode is in thermal or electrical contact with the magnetic tunnel junction data cell to assist in resistance state switching.

摘要翻译： 存储器阵列包括位线和源极线的交叉点阵列。 存储器设置在交叉点阵列的交叉点处。 存储单元包括电耦合到位线和源极线的磁性隧道结数据单元。 磁隧道结数据单元被配置为通过使极化写入电流通过磁性隧道结数据单元在高电阻状态和低电阻状态之间切换。 晶体管电连接在磁性隧道结数据单元与位线或源极线之间，二极管与磁性隧道结数据单元处于热或电接触以辅助电阻状态切换。

公开(公告)号：US08068359B2

公开(公告)日：2011-11-29

申请号：US12948838

申请日：2010-11-18

申请人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

发明人： Hai Li ,  Yiran Chen ,  Hongyue Liu ,  Xuguang Wang

IPC分类号： G11C11/00

CPC分类号： G11C11/1675 ,  G11C11/1659

摘要： A memory array includes a plurality of magnetic tunnel junction cells arranged in a 2 by 2 array. Each magnetic tunnel junction cell is electrically coupled between a bit line and a source line and each magnetic tunnel junction cell electrically coupled to a transistor. Each magnetic tunnel junction cell is configured to switch between a high resistance state and a low resistance state by passing a write current passing though the magnetic tunnel junction cell. A first word line is electrically coupled to a gate of first set of two of the transistors and a second word line is electrically coupled to a gate of a second set of two of the transistors. The source line is a common source line for the plurality of magnetic tunnel junctions.

摘要翻译： 存储器阵列包括以2×2阵列排列的多个磁性隧道结单元。 每个磁性隧道结单元电耦合在位线和源极线之间，并且每个磁性隧道结单元电耦合到晶体管。 每个磁性隧道结单元被配置为通过使经过磁性隧道结单元的写入电流通过高电阻状态和低电阻状态之间切换。 第一字线电耦合到第一组晶体管的第一组的栅极，并且第二字线电耦合到第二组二个晶体管的栅极。 源极线是用于多个磁性隧道结的公共源极线。