LITHOGRAPHIC APPARATUS AND METHOD
    41.
    发明申请
    LITHOGRAPHIC APPARATUS AND METHOD 有权
    LITHOGRAPHIC设备和方法

    公开(公告)号:US20120281193A1

    公开(公告)日:2012-11-08

    申请号:US13442458

    申请日:2012-04-09

    CPC classification number: G03F7/70916 G03F7/70808 G03F7/70933

    Abstract: A lithographic apparatus includes a projection system that includes a plurality of reflective optics. One of the reflective optics is provided with an opening which passes through the reflective optic. The opening is closed by a covering layer that is substantially transparent to EUV radiation. The covering layer prevents contamination from entering the projection system, while allowing patterned EUV radiation to pass from the projection system onto a substrate.

    Abstract translation: 光刻设备包括包括多个反射光学元件的投影系统。 反射光学器件中的一个设置有穿过反射光学器件的开口。 开口由对EUV辐射基本透明的覆盖层封闭。 覆盖层防止污染物进入投影系统,同时允许图案化的EUV辐射从投影系统传递到基底上。

    Lithographic method
    43.
    发明授权
    Lithographic method 有权
    平版印刷法

    公开(公告)号:US07894063B2

    公开(公告)日:2011-02-22

    申请号:US12258707

    申请日:2008-10-27

    CPC classification number: G03F9/7046 G03F9/7003

    Abstract: A method includes determining relative positional relationships between applied fields on a substrate, one of the applied fields including a first field; in a lithographic apparatus, using an alignment apparatus to obtain at least one absolute positional relationship between the position of at least the first field of the substrate and a part of the lithographic apparatus; and determining an absolute positional relationship between at least one field, other than the first field, and a part of the lithographic apparatus using the relative positional relationships and the at least one obtained absolute relationship.

    Abstract translation: 一种方法包括确定衬底上施加的场之间的相对位置关系,所施加的场之一包括第一场; 在光刻设备中,使用对准装置获得至少基板的第一场的位置与光刻设备的一部分之间的至少一个绝对位置关系; 以及使用所述相对位置关系和所述至少一个所获得的绝对关系,确定除了所述第一场之外的至少一个场与所述光刻设备的一部分之间的绝对位置关系。

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