MULTI-LAYERED OPTICAL INTEGRATED CIRCUIT ASSEMBLY

    公开(公告)号:US20230044697A1

    公开(公告)日:2023-02-09

    申请号:US17397352

    申请日:2021-08-09

    申请人: Intel Corporation

    IPC分类号: G02B6/132 G02B6/136

    摘要: Described herein are stacked photonic integrated circuit (PIC) assemblies that include multiple layers of waveguides. The waveguides are formed of substantially monocrystalline materials, which cannot be repeatedly deposited. Layers of monocrystalline material are fabricated and repeatedly transferred onto the PIC structure using a layer transfer process, which involves bonding a monocrystalline material using a non-monocrystalline bonding material. Layers of isolation materials are also deposited or layer transferred onto the PIC assembly.

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20230035735A1

    公开(公告)日:2023-02-02

    申请号:US17965755

    申请日:2022-10-13

    IPC分类号: G02B6/124 G02B6/136 H01L25/16

    摘要: A semiconductor device includes a photonic die and an optical die. The photonic die includes a grating coupler and an optical device. The optical device is connected to the grating coupler to receive radiation of predetermined wavelength incident on the grating coupler. The optical die is disposed over the photonic die and includes a substrate with optical nanostructures. Positions and shapes of the optical nanostructures are such to perform an optical transformation on the incident radiation of predetermined wavelength when the incident radiation passes through an area of the substrate where the optical nanostructures are located. The optical nanostructures overlie the grating coupler so that the incident radiation of predetermined wavelength crosses the optical die where the optical nanostructures are located before reaching the grating coupler.

    Hybrid edge couplers with layers in multiple levels

    公开(公告)号:US11531164B2

    公开(公告)日:2022-12-20

    申请号:US17169971

    申请日:2021-02-08

    摘要: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes a dielectric layer including an edge, a waveguide core region on the dielectric layer, and multiple segments on the dielectric layer. The waveguide core region has an end surface, and the waveguide core region is lengthwise tapered toward the end surface. The segments are positioned between the waveguide core region and the edge of the dielectric layer. A waveguide core has a section positioned over the waveguide core region in an overlapping arrangement. The waveguide core has an end surface, and the section of the waveguide core is lengthwise tapered toward the end surface.

    OPTICAL BRIDGE WAVEGUIDE FOR HETEROGENEOUS INTEGRATION AND METHOD OF FORMING SAME

    公开(公告)号:US20220381986A1

    公开(公告)日:2022-12-01

    申请号:US17826032

    申请日:2022-05-26

    摘要: A method of forming an optical bridge waveguide between an optical element and an optical waveguide layer fabricated on a substrate such as a PIC platform. An optical element is heterogeneously integrated on the substrate. A first dielectric layer is deposited on the substrate and etched to a predetermined height. A second dielectric layer having a higher k than the first dielectric layer is deposited on the first dielectric layer, and a third dielectric layer having a lower k than the second dielectric layer is deposited on the second dielectric layer. The dielectric layers are formed such that the second dielectric layer provides an optical bridge waveguide between the optical element and optical waveguide layer, with the first and third dielectric layers providing a lower and upper cladding, respectively, for the optical bridge waveguide.

    Silicon photonics device for LIDAR sensor and method for fabrication

    公开(公告)号:US11513289B1

    公开(公告)日:2022-11-29

    申请号:US17535024

    申请日:2021-11-24

    IPC分类号: G02B6/12 G02B6/136 G01S7/481

    摘要: A structure of a silicon photonics device for LIDAR includes a first insulating structure and a second insulating structure disposed above one or more etched silicon structures overlying a substrate member. A metal layer is disposed above the first insulating structure without a prior deposition of a diffusion barrier and adhesion layer. A thin insulating structure is disposed above the second insulating structure. A first configuration of the metal layer, the first insulating structure and the one or more etched silicon structures forms a free-space coupler. A second configuration of the thin insulating structure above the second insulating structure forms an edge coupler.

    INTEGRATED OPTICAL DEVICES AND METHODS OF FORMING THE SAME

    公开(公告)号:US20220308289A1

    公开(公告)日:2022-09-29

    申请号:US17841694

    申请日:2022-06-16

    IPC分类号: G02B6/136

    摘要: Integrated optical devices and methods of forming the same are disclosed. A method of forming an integrated optical device includes the following steps. A substrate is provided. The substrate includes, from bottom to top, a first semiconductor layer, an insulating layer and a second semiconductor layer. The second semiconductor layer is patterned to form a waveguide pattern. A surface smoothing treatment is performed to the waveguide pattern until a surface roughness Rz of the waveguide pattern is equal to or less than a desired value. A cladding layer is formed over the waveguide pattern.

    Wafer-level optoelectronic packaging

    公开(公告)号:US11448827B2

    公开(公告)日:2022-09-20

    申请号:US16860615

    申请日:2020-04-28

    发明人: Yee Loy Lam

    摘要: A wafer-level optoelectronic packaging method includes fabricating a pre-singulated wafer. The pre-singulated wafer has a plurality of sub-mounts. A first sub-mount of the plurality of sub-mounts includes an optical waveguide formed on a substrate, a multi-layered sub-mount boundary wall that is formed on the optical waveguide, and a v-groove that is external to the sub-mount boundary wall. A plurality of optical dies are attached to the corresponding plurality of sub-mounts, such that each optical die is aligned to the optical waveguide of the corresponding sub-mount. A cap-wafer including a plurality of caps is attached to the pre-singulated wafer to obtain an encapsulated pre-singulated wafer. The encapsulated pre-singulated wafer is diced to obtain a plurality of optoelectronic packages. The optical waveguide of each optoelectronic package serves as an interconnection conduit between the corresponding optical die and an optical fiber placed in the corresponding v-groove.

    WAVEGUIDE STRUCTURE FOR A PHOTONIC INTEGRATED CIRCUIT

    公开(公告)号:US20220276439A1

    公开(公告)日:2022-09-01

    申请号:US17750075

    申请日:2022-05-20

    摘要: A waveguide structure (IOO) for a photonic integrated circuit, comprising: a substrate; an active region (102) comprising a diode junction, the active region comprising: a light emission portion (102a) to emit light in a first direction and a second direction perpendicular the first direction; and a light absorption portion (102b) to absorb light emitted from the light emission portion (102a) in the second direction; a first contact corresponding to the light emission portion (102a); and a second contact corresponding to the light absorption portion (102b).