公开(公告)号：US20230229028A1

公开(公告)日：2023-07-20

申请号：US18125165

申请日：2023-03-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kevin K. Dezfulian

IPC: H01P5/04 ,  H01P1/18

CPC classification number: H01P5/04 ,  H01P1/182

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

公开(公告)号：US20220252910A1

公开(公告)日：2022-08-11

申请号：US17170237

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michal Rakowski ,  Abdelsalam Aboketaf ,  Kevin K. Dezfulian ,  Massimo Sorbara

IPC: G02F1/025 ,  G02F1/015

Abstract: Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A first waveguide core includes first and second sections. A second waveguide core includes a first section laterally adjacent to the first section of the first waveguide core and a second section laterally adjacent to the second section of the first waveguide core. An interconnect structure is formed over the first waveguide core and the second waveguide core. The interconnect structure includes first and second transmission lines. The first transmission line is physically connected within the interconnect structure to the first section of the first waveguide core. The second transmission line includes a first section physically connected within the interconnect structure to the second section of the first waveguide core and a second section adjacent to the first transmission line.

公开(公告)号：US20220317482A1

公开(公告)日：2022-10-06

申请号：US17223449

申请日：2021-04-06

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kevin K. Dezfulian

IPC: G02F1/025

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

公开(公告)号：US20220252790A1

公开(公告)日：2022-08-11

申请号：US17169971

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kevin K. Dezfulian ,  Yusheng Bian ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/30

Abstract: Structures including an edge coupler and methods of fabricating a structure including an edge coupler. The structure includes a dielectric layer including an edge, a waveguide core region on the dielectric layer, and multiple segments on the dielectric layer. The waveguide core region has an end surface, and the waveguide core region is lengthwise tapered toward the end surface. The segments are positioned between the waveguide core region and the edge of the dielectric layer. A waveguide core has a section positioned over the waveguide core region in an overlapping arrangement. The waveguide core has an end surface, and the section of the waveguide core is lengthwise tapered toward the end surface.

公开(公告)号：US12211886B1

公开(公告)日：2025-01-28

申请号：US18765489

申请日：2024-07-08

Applicant: GlobalFoundries U.S. Inc.

Inventor： Prateek Kumar Sharma ,  Venkata Narayana Rao Vanukuru ,  Kevin K. Dezfulian ,  Kenneth J. Giewont

IPC: H01L21/768 ,  H01L21/764 ,  H01L49/02

Abstract: Structures including an inductor and methods of forming such structures. The structure comprises a semiconductor substrate including a first plurality of sealed cavities and a back-end-of-line stack on the semiconductor substrate. Each sealed cavity includes an air gap, and the back-end-of-line stack includes an inductor having a winding that overlaps with the scaled cavities.

公开(公告)号：US11630335B2

公开(公告)日：2023-04-18

申请号：US17170237

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michal Rakowski ,  Abdelsalam Aboketaf ,  Kevin K. Dezfulian ,  Massimo Sorbara

IPC: G02F1/025 ,  G02F1/225

Abstract: Structures for an optical power modulator and methods of fabricating a structure for an optical power modulator. A first waveguide core includes first and second sections. A second waveguide core includes a first section laterally adjacent to the first section of the first waveguide core and a second section laterally adjacent to the second section of the first waveguide core. An interconnect structure is formed over the first waveguide core and the second waveguide core. The interconnect structure includes first and second transmission lines. The first transmission line is physically connected within the interconnect structure to the first section of the first waveguide core. The second transmission line includes a first section physically connected within the interconnect structure to the second section of the first waveguide core and a second section adjacent to the first transmission line.

公开(公告)号：US11487059B2

公开(公告)日：2022-11-01

申请号：US17179532

申请日：2021-02-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asli Sahin ,  Karen A. Nummy ,  Thomas Houghton ,  Kevin K. Dezfulian ,  Kenneth J. Giewont ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

公开(公告)号：US11934051B2

公开(公告)日：2024-03-19

申请号：US18125165

申请日：2023-03-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Kevin K. Dezfulian

IPC: G02F1/025

CPC classification number: G02F1/025 ,  G02F2203/50

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

公开(公告)号：US20220268994A1

公开(公告)日：2022-08-25

申请号：US17179532

申请日：2021-02-19

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Asli Sahin ,  Karen A. Nummy ,  Thomas Houghton ,  Kevin K. Dezfulian ,  Kenneth J. Giewont ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

Abstract: A photonics integrated circuit includes a semiconductor substrate; a buried insulator layer positioned over the semiconductor substrate; and a back-end-of-line (BEOL) insulator stack over a first portion of the buried insulator layer. In addition, the PIC includes a silicon nitride (SiN) waveguide edge coupler positioned in a first region over the buried insulator layer and at least partially under the BEOL insulator stack. An oxide layer extends over a side of the BEOL insulator stack. The SiN waveguide edge coupler provides better power handling and fabrication tolerance than silicon waveguide edge couplers, despite the location under various BEOL layers. The PIC can also include silicon waveguide edger coupler(s).

公开(公告)号：US10969544B1

公开(公告)日：2021-04-06

申请号：US16682354

申请日：2019-11-13

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Shuren Hu ,  Bo Peng ,  David Riggs ,  Karen Nummy ,  Kevin K. Dezfulian ,  Francis Afzal

IPC: G02B6/12 ,  G02B6/293 ,  G02B6/02

Abstract: Structures for a filter and methods of fabricating a structure for a filter. The filter is coupled to a waveguide core. The filter includes a first plurality of grating structures positioned adjacent to a first section of the waveguide core and a second plurality of grating structures positioned adjacent to a second section of the waveguide core. The first plurality of grating structures are configured to cause laser light in a first portion of a wavelength band to be transferred between the first section of the waveguide core and the first plurality of grating structures. The second plurality of grating structures are configured to cause laser light in a second portion of a wavelength band to be transferred between the second section of the waveguide core and the second plurality of grating structures.