公开(公告)号：US20200073262A1

公开(公告)日：2020-03-05

申请号：US16610103

申请日：2018-05-01

Applicant: ASML HOLDING N.V. ,  ASML NETHERLANDS B.V.

Inventor： Matthew LIPSON ,  Christopher John MASON ,  Damoon SOHRABIBABAHEIDARY ,  Jimmy Matheus Wilhelmus VAN DE WINKEL ,  Bert Dirk SCHOLTEN

IPC: G03F7/20 ,  B08B1/00

Abstract: A method of dislodging contamination from a part of an apparatus used in a patterning process, the method including: providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination; and dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.

公开(公告)号：US20200073260A1

公开(公告)日：2020-03-05

申请号：US16467124

申请日：2017-12-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Yu CAO ,  Yen-Wen LU ,  Peng LIU ,  Rafael C. HOWELL

IPC: G03F7/20

Abstract: A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US10579772B2

公开(公告)日：2020-03-03

申请号：US15996992

申请日：2018-06-04

Applicant: ASML NETHERLANDS B.V.

Inventor： Christophe David Fouquet ,  Bernardo Kastrup ,  Arie Jeffrey Den Boef ,  Johannes Catharinus Hubertus Mulkens ,  James Benedict Kavanagh ,  James Patrick Koonmen ,  Neal Patrick Callan

IPC: G06F17/50 ,  H01L21/66 ,  G06N7/00 ,  G03F7/20

Abstract: A computer-implemented defect prediction method for a device manufacturing process involving processing a portion of a design layout onto a substrate, the method including: identifying a hot spot from the portion of the design layout; determining a range of values of a processing parameter of the device manufacturing process for the hot spot, wherein when the processing parameter has a value outside the range, a defect is produced from the hot spot with the device manufacturing process; determining an actual value of the processing parameter; determining or predicting, using the actual value, existence, probability of existence, a characteristic, or a combination thereof, of a defect produced from the hot spot with the device manufacturing process.

公开(公告)号：US10578980B2

公开(公告)日：2020-03-03

申请号：US16465161

申请日：2017-11-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Ralph Timotheus Huijgen ,  Marc Jurian Kea ,  Marcel Theodorus Maria Van Kessel ,  Masashi Ishibashi ,  Chi-Hsiang Fan ,  Hakki Ergün Cekli ,  Youping Zhang ,  Maurits Van Der Schaar ,  Liping Ren

IPC: G03B27/32 ,  G03F7/20 ,  G01N21/956 ,  G03F9/00

Abstract: A method, system and program for determining a position of a feature referenced to a substrate. The method includes measuring a position of the feature, receiving an intended placement of the feature and determining an estimate of a placement error based on knowledge of a relative position of a first reference feature referenced to a first layer on a substrate with respect to a second reference feature referenced to a second layer on a substrate. The updated position may be used to position the layer of the substrate having the feature, or another layer of the substrate, or another layer of another substrate.

公开(公告)号：US10578959B2

公开(公告)日：2020-03-03

申请号：US15567279

申请日：2016-03-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Gijs Kramer ,  Simon Karel Ravensbergen ,  Niek Jacobus Johannes Roset ,  Pieter Renaat Maria Hennus

IPC: G03B27/42 ,  G03F7/20

Abstract: A support apparatus for a lithographic apparatus has an object holder and an extraction body radially outward of the object holder. The object holder is configured to support an object. The extraction body includes an extraction opening configured to extract fluid from a top surface of the support apparatus. The extraction body is spaced from the object holder such that the extraction body is substantially decoupled from the object holder. The extraction body includes a projection configured such that it surrounds the object holder and such that, in use, a layer of immersion liquid is retained on the projection and in contact with an object supported on the object holder.

公开(公告)号：US10571806B2

公开(公告)日：2020-02-25

申请号：US16327363

申请日：2017-08-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo Tel ,  Mark John Maslow ,  Frank Staals ,  Paul Christiaan Hinnen

IPC: G03F7/20

Abstract: A method involving determining a contribution that one or more process apparatuses make to a characteristic of a substrate after the substrate has been processed according to a patterning process by the one or more process apparatuses by removing from values of the characteristic of the substrate a contribution of a lithography apparatus to the characteristic and a contribution of one or more pre-lithography process apparatuses to the characteristic.

公开(公告)号：US20200057379A1

公开(公告)日：2020-02-20

申请号：US16485681

申请日：2018-01-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Pieter STARREVELD ,  Maurice Willem Jozef Etiënne WIJCKMANS

IPC: G03F7/20

Abstract: The present invention relates to a lithographic apparatus, comprising: a primary frame (10) which is provided with a functional unit (11, 12, 14), a secondary frame (20), a primary frame support (30), which is adapted to support the primary frame onto the secondary frame, a flexible utility connection (40), adapted to connect the functional unit to an auxiliary system (51, 52, 53), a vibration isolation body (60) having a body mass, which is moveably connected to the secondary frame by a flexible passive body support (61) having a body support stiffness, wherein the flexible utility connection is fixed to the vibration isolation body at a distance from the primary frame.

公开(公告)号：US10558126B2

公开(公告)日：2020-02-11

申请号：US15120093

申请日：2015-02-10

Applicant: ASML Netherlands B.V. ,  Carl Zeiss SMT GmbH

Inventor： Jan Bernard Plechelmus Van Schoot ,  Sascha Migura ,  Bernhard Kneer

IPC: G03F7/20 ,  G03F1/00

Abstract: A lithographic apparatus including a support structure constructed to support a mask having a patterned area which is capable of imparting an EUV radiation beam with a pattern in its cross-section to form a patterned radiation beam, wherein the support structure is movable in a scanning direction, a substrate table constructed to hold a substrate, wherein the substrate table is movable in the scanning direction, and a projection system configured to project the patterned radiation beam onto an exposure region of the substrate, wherein the projection system has a demagnification in the scanning direction which is greater than a demagnification in a second direction which is perpendicular to the scanning direction and wherein the demagnification in the second direction is greater than 4×.

公开(公告)号：US10551172B2

公开(公告)日：2020-02-04

申请号：US15873880

申请日：2018-01-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Samee Ur Rehman

IPC: G01B11/24 ,  G03F7/20 ,  G01B11/30 ,  G01N21/956

Abstract: Disclosed herein is a metrology method, and an associated metrology apparatus, the metrology method includes measuring a target formed in at least two layers on a substrate by a lithographic process and capturing at least one corresponding pair of non-zeroth diffraction orders, for example in an image field, to obtain measurement data. A simulation of a measurement of the target as defined in terms of geometric parameters of the target, the geometric parameters including one or more variable geometric parameters, is performed and a difference between the measurement data and simulation data is minimized, so as to directly reconstruct a value for each of the one or more variable geometric parameters.

公开(公告)号：US10546790B2

公开(公告)日：2020-01-28

申请号：US15445478

申请日：2017-02-28

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan Van Leest ,  Anagnostis Tsiatmas ,  Paul Christiaan Hinnen ,  Elliott Gerard McNamara ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer

IPC: G06F17/50 ,  H01L21/66 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.