公开(公告)号：US20200073260A1

公开(公告)日：2020-03-05

申请号：US16467124

申请日：2017-12-06

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Yen-Wen LU ,  Peng LIU ,  Rafael C. HOWELL

IPC分类号： G03F7/20

摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function represents a continuous transmission mask and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US20210271173A1

公开(公告)日：2021-09-02

申请号：US17326481

申请日：2021-05-21

申请人： ASML NETHERLANDS B.V.

发明人： Yu CAO ,  Yen-Wen LU ,  Peng LIU ,  Rafael C. HOWELL ,  Roshni BISWAS

IPC分类号： G03F7/20

摘要： A method including: obtaining a thin-mask transmission function of a patterning device and a M3D model for a lithographic process, wherein the thin-mask transmission function is a continuous transmission mask (CTM) and the M3D model at least represents a portion of M3D attributable to multiple edges of structures on the patterning device; determining a M3D mask transmission function of the patterning device by using the thin-mask transmission function and the M3D model; and determining an aerial image produced by the patterning device and the lithographic process, by using the M3D mask transmission function.

公开(公告)号：US20210064811A1

公开(公告)日：2021-03-04

申请号：US17097106

申请日：2020-11-13

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU ,  Yu CAO ,  Luoqi CHEN ,  Jun YE

IPC分类号： G06F30/398 ,  G03F7/20 ,  G06F30/30 ,  G03F1/76 ,  G03F1/50

摘要： A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

公开(公告)号：US20160357900A1

公开(公告)日：2016-12-08

申请号：US15174732

申请日：2016-06-06

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC分类号： G06F17/50 ,  G03F1/36

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009 ,  G06F17/5068

摘要： A three-dimensional mask model that provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

摘要翻译： 一种三维掩模模型，其提供具有亚波长特征的光刻掩模的三维效果比薄膜模型更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

公开(公告)号：US20150378264A1

公开(公告)日：2015-12-31

申请号：US14766408

申请日：2014-02-04

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU

IPC分类号： G03F7/20

CPC分类号： G03F7/7055 ,  G03F7/70441 ,  G03F7/705

摘要： A computer-implemented method for simulating a scattered radiation field of a patterning device including one or more features, in a lithographic projection apparatus, the method including: determining a scattering function of the patterning device using one or more scattering functions of feature elements of the one or more features; wherein at least one of the one or more features is a three-dimensional feature, or the one or more scattering functions characterize scattering of incident radiation fields at a plurality of incident angles on the feature elements.

摘要翻译： 一种用于在光刻投影设备中模拟包括一个或多个特征的图案形成装置的散射辐射场的计算机实现的方法，所述方法包括：使用所述图形形成装置的特征元素的一个或多个散射函数来确定所述图案形成装置的散射函数 一个或多个特征; 其中所述一个或多个特征中的至少一个是三维特征，或者所述一个或多个散射函数表征在所述特征元件上的多个入射角处的入射辐射场的散射。

公开(公告)号：US20140195993A1

公开(公告)日：2014-07-10

申请号：US14081386

申请日：2013-11-15

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU ,  Yu Cao ,  Luoqi Chen ,  Jun Ye

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/36 ,  G03F7/705 ,  G06F17/5009

摘要： A three-dimensional mask model of the invention provides a more realistic approximation of the three-dimensional effects of a photolithography mask with sub-wavelength features than a thin-mask model. In one embodiment, the three-dimensional mask model includes a set of filtering kernels in the spatial domain that are configured to be convolved with thin-mask transmission functions to produce a near-field image. In another embodiment, the three-dimensional mask model includes a set of correction factors in the frequency domain that are configured to be multiplied by the Fourier transform of thin-mask transmission functions to produce a near-field image.

摘要翻译： 本发明的三维掩模模型提供了比薄膜模型具有亚波长特征的光刻掩模的三维效果更逼真的近似。 在一个实施例中，三维掩模模型包括空间域中的一组过滤内核，其被配置为与薄膜传输函数进行卷积以产生近场图像。 在另一个实施例中，三维掩模模型包括频域中的一组校正因子，其被配置为乘以薄膜传输函数的傅立叶变换以产生近场图像。

公开(公告)号：US20170262564A1

公开(公告)日：2017-09-14

申请号：US15529908

申请日：2015-11-24

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU

IPC分类号： G06F17/50 ,  G03F7/20

摘要： Disclosed herein is a computer-implemented method of image simulation for a device manufacturing process, the method comprising: identifying regions of uniform optical properties from a portion or an entirety of a substrate or a patterning device, wherein optical properties are uniform within each of the regions; obtaining an image for each of the regions, wherein the image is one that would be formed from the substrate if the entirety of the substrate or the patterning device has the same uniform optical properties as that region; forming a stitched image by stitching the image for each of the regions according to locations of the regions in the portion or the entirety of the substrate of the patterning device; forming an adjusted image by applying adjustment to the stitched image for at least partially correcting for or at least partially imitating an effect of finite sizes of the regions.

公开(公告)号：US20200012196A1

公开(公告)日：2020-01-09

申请号：US16483452

申请日：2018-02-13

申请人： ASML NETHERLANDS B.V.

发明人： Peng LIU ,  Ya LUO ,  Yu CAO ,  Yen-Wen LU

IPC分类号： G03F7/20 ,  G06N3/08 ,  G06F17/50

摘要： A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.

公开(公告)号：US20180246419A1

公开(公告)日：2018-08-30

申请号：US15553879

申请日：2016-02-24

申请人： ASML Netherlands B.V.

发明人： Peng LIU

IPC分类号： G03F7/20

摘要： A method including: obtaining at least a characteristic of deformation of a resist layer in a first direction, as if there were no deformation in any directions perpendicular to the first direction; obtaining at least a characteristic of deformation of the resist layer in a second direction as if there were no deformation in the first direction, the second direction being perpendicular different to from the first direction; and obtaining at least a characteristic of three-dimensional deformation of the resist layer based on the characteristic of the deformation in the first direction and the characteristic of the deformation in the second direction.