公开(公告)号：US06344105B1

公开(公告)日：2002-02-05

申请号：US09345639

申请日：1999-06-30

Applicant: John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

Inventor： John E. Daugherty ,  Neil Benjamin ,  Jeff Bogart ,  Vahid Vahedi ,  David Cooperberg ,  Alan Miller ,  Yoko Yamaguchi

IPC: H01L2100

CPC classification number: H01L21/67069 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/68721 ,  H01L21/68735 ,  Y10S156/915

Abstract: Improved methods and apparatus for ion-assisted etch processing in a plasma processing system are disclosed. In accordance with various aspects of the invention, an elevated edge ring, a grooved edge ring, and a RF coupled edge ring are disclosed. The invention operates to improve etch rate uniformity across a substrate (wafer). Etch rate uniformity improvement provided by the invention not only improves fabrication yields but also is cost efficient and does not risk particulate and/or heavy metal contamination.

Abstract translation: 公开了用于等离子体处理系统中的离子辅助蚀刻处理的改进方法和装置。 根据本发明的各个方面，公开了一种高边缘环，带槽边缘环和RF耦合边缘环。 本发明用于提高衬底（晶片）上的蚀刻速率均匀性。 本发明提供的蚀刻率均匀性改进不仅提高了制造成本，而且成本有效，并且不会对颗粒和/或重金属污染造成危害。

公开(公告)号：US5863376A

公开(公告)日：1999-01-26

申请号：US658259

申请日：1996-06-05

Applicant: Thomas E. Wicker ,  Joel M. Cook ,  Robert A. Maraschin ,  William S. Kennedy ,  Neil Benjamin

Inventor： Thomas E. Wicker ,  Joel M. Cook ,  Robert A. Maraschin ,  William S. Kennedy ,  Neil Benjamin

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H05H1/00

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32522

Abstract: A plasma processing chamber includes a substrate holder and a dielectric member such as a dielectric window or gas distribution plate having an interior surface facing the substrate holder, the interior surface being maintained below a threshold temperature to minimize process drift during processing of substrates. The chamber can include an antenna which inductively couples RF energy through the dielectric member to energize process gas into a plasma state. The antenna can include a channel through which a temperature controlling fluid, which has been cooled by a closed circuit temperature controller, is passed. The control of the temperature of the interior surface minimizes process drift and degradation of the quality of the processed substrates during sequential batch processing of substrates such as during oxide etching of semiconductor wafers.

Abstract translation: 等离子体处理室包括衬底保持器和介电构件，例如电介质窗口或气体分配板，其具有面向衬底保持器的内表面，内表面保持在阈值温度以下，以最小化衬底处理期间的工艺漂移。 腔室可以包括通过电介质构件感应耦合RF能量以将处理气体激发成等离子体状态的天线。 天线可以包括通过已经被闭路温度控制器冷却的温度控制流体的通道。 内部表面的温度的控制使得在衬底的顺序批处理期间（例如在半导体晶片的氧化物蚀刻期间）处理衬底的工艺漂移和质量降低最小化。