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    Active Matrix Organic Light Emitting Diode Display Having Variable Optical Path Length for Microcavity
    51.
    发明申请
    Active Matrix Organic Light Emitting Diode Display Having Variable Optical Path Length for Microcavity 审中-公开
    有源矩阵有机发光二极管显示器具有微腔可变光路长度

    公开(公告)号：US20140203245A1

    公开(公告)日：2014-07-24

    申请号：US13749394

    申请日：2013-01-24

    Applicant: APPLE INC.

    Inventor： Vasudha Gupta ,  Young Bae Park ,  Shih Chang Chang

    IPC: H01L51/52 ,  H01L51/56

    CPC classification number: H01L51/5203 ,  H01L27/3211 ,  H01L51/5265

    Abstract: An organic light emitting diode display includes an array of pixels on a substrate. Each pixel includes three sub-pixels that emits light of different wavelengths from each other. The display includes thin film transistors (TFTs) for the sub-pixels on the substrate. Each TFT is separated from each other by a first pixel defining layer. The display also includes a first pixel electrode connected to the TFT for each sub-pixel, a tuning layer on the first pixel electrode, where the tuning layer has a thickness for each sub-pixel such that each sub-pixel has a optical-path length different from another sub-pixel. The display further includes an organic light emitting layer disposed over the tuning layer, and a second pixel defining layer covering a first end of the tuning layer and a second end of the tuning layer opposing to the first end of the tuning layer, and exposing the light emitting layer.

    Abstract translation: 有机发光二极管显示器包括衬底上的像素阵列。 每个像素包括发射彼此不同波长的光的三个子像素。 显示器包括用于衬底上的子像素的薄膜晶体管（TFT）。 每个TFT通过第一像素限定层彼此分离。 显示器还包括与每个子像素连接到TFT的第一像素电极，第一像素电极上的调谐层，其中调谐层具有用于每个子像素的厚度，使得每个子像素具有光路 长度不同于另一个子像素。 显示器还包括设置在调谐层上的有机发光层和覆盖调谐层的第一端的第二像素限定层和与调谐层的第一端相对的调谐层的第二端， 发光层。

    Organic light-emitting diode display with external compensation and anode reset
    56.
    发明授权
    Organic light-emitting diode display with external compensation and anode reset 审中-公开

    公开(公告)号：US10672338B2

    公开(公告)日：2020-06-02

    申请号：US15802367

    申请日：2017-11-02

    Applicant: Apple Inc.

    Inventor： Chin-Wei Lin ,  Shinya Ono ,  Vasudha Gupta

    IPC: G09G3/325 ,  G09G3/3258 ,  G09G3/3291 ,  G06F3/041 ,  G06F3/044 ,  H01L27/32 ,  G09G3/3233 ,  G09G3/3275

    Abstract: A display may include an array of organic light-emitting diode display pixels having transistors characterized by threshold voltages subject to transistor variations. Compensation circuitry may be used to measure a transistor threshold voltage for a pixel. The threshold voltage may be sampled by controlling the pixel to sample the threshold voltage onto a capacitor at the pixel. The pixel may include at least one semiconducting-oxide transistor, silicon transistors, and a light-emitting diode. The diode may be coupled to a data line that can be used for both data loading and compensation sensing operations. Reset operations may be performed after data programming and before emission to reset the anode voltage for the diode.

    Displays with silicon and semiconducting oxide thin-film transistors
    60.
    发明授权
    Displays with silicon and semiconducting oxide thin-film transistors 有权

    公开(公告)号：US10096622B2

    公开(公告)日：2018-10-09

    申请号：US15727475

    申请日：2017-10-06

    Applicant: Apple Inc.

    Inventor： Vasudha Gupta ,  Jae Won Choi ,  Shih Chang Chang ,  Tsung-Ting Tsai ,  Young Bae Park

    IPC: G02F1/1335 ,  G02F1/136 ,  H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L27/32 ,  G02F1/1345 ,  H01L29/786

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

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