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公开(公告)号：US20230207578A1
公开(公告)日：2023-06-29
申请号：US18116689
申请日：2023-03-02
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Dong LI , Xiaolong LI , Liangjian LI , Hongwei TIAN
IPC: H01L27/12 , H10K59/124 , H10K59/131
CPC classification number: H01L27/1248 , H01L27/124 , H01L27/1259 , H10K59/124 , H10K59/131 , H01L27/1255
Abstract: An array substrate and a manufacturing method thereof are provided. The array substrate includes a display pixel area for providing pixel units arranged in an array. The array substrate further includes: a base substrate, a first insulating layer, a second insulating layer, and a first conductive pattern layer. The first insulating layer is provided on the base substrate, grooves are provided in the first insulating layer, and the grooves are provided in the display pixel area. The second insulating layer is provided on the first insulating layer, and the second insulating layer is also filled into the grooves. The first conductive pattern layer is provided on the second insulating layer. By providing the grooves, the array substrate may have better impact resistance and bending resistance.
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52.发明申请公开(公告)号：US20210407353A1
公开(公告)日：2021-12-30
申请号：US17280826
申请日：2020-05-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongwei TIAN , Yanan NIU , Dong LI , Ming LIU , Zheng LIU
IPC: G09G3/00 , G09G3/3208 , H01L27/32 , H01L51/00 , H01L51/56
Abstract: The present invention provides a stretchable display substrate, a method for manufacturing the same, a display device and an operating method thereof, and belongs to the field of display technologies. The stretchable display substrate includes a plurality of islands on a base substrate, and a plurality of connection bridges corresponding to each of the plurality of islands. The plurality of islands are distributed in array and separated from each other; the plurality of connection bridges corresponding to each island are configured to connect the island with islands adjacent to the island. An electrical detection structure is provided between each island and the plurality of connection bridges corresponding to the island, and the electrical detection structure is configured to have an electrical parameter changed when the stretchable display substrate is stretched.
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公开(公告)号：US20210043864A1
公开(公告)日：2021-02-11
申请号：US16965625
申请日：2019-12-18
Inventor： Dong LI
Abstract: A quantum dot light emitting diode (QLED) device and a manufacturing method thereof are provided. The QLED device includes a quantum dot light emitting layer, a first electrode, and an electron transport layer between the quantum dot light emitting layer and the first electrode. The electron transport layer has multiple electron transport sub-layers. For any two electron transport sub-layers among the multiple electron transport sub-layers, a lowest unoccupied molecular orbital (LUMO) energy level of one electron transport sub-layer close to the quantum dot light emitting layer is higher than an LUMO energy level of another electron transport sub-layer far away from the quantum dot light emitting layer, and an LUMO energy level of each of the multiple electron transport sub-layers is lower than an LUMO energy level of the quantum dot light emitting layer and higher than a work function of the first electrode.
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54.发明申请公开(公告)号：US20190163306A1
公开(公告)日：2019-05-30
申请号：US16305980
申请日：2018-05-24
Inventor： Jing WANG , Lei ZHANG , Zouming XU , Qitao ZHENG , Xiaodong XIE , Guiyu ZHANG , Dong LI , Tsungchieh KUO
CPC classification number: G06F3/0412 , G06F1/1643 , G06F3/044 , G06F3/0443 , G06F3/0446 , G06F3/0448 , G06F2203/04103 , G06F2203/04111
Abstract: A touch panel, a touch display device, and a method for fabricating the touch panel are disclosed. The touch panel comprises: a substrate; a plurality of touch sensing units arranged in an array on the substrate, each of the touch sensing units including a first touch sub-electrode arranged in a first direction, two second touch sub-electrodes arranged on both sides of the first touch sub-electrode and arranged in a second direction, and an electrode slit disposed between each of the second touch sub-electrodes and the first touch sub-electrode; wherein the two second touch sub-electrodes in each of the touch sensing units are electrically connected via at least two first bridges.
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55.发明申请公开(公告)号：US20180108757A1
公开(公告)日：2018-04-19
申请号：US15116980
申请日：2015-10-16
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Xiaolong LI , Zheng LIU , Xiaoyong LU , Dong LI , Chunping LONG
Abstract: A manufacturing method for a polysilicon thin film is provided. The manufacturing method for a polysilicon thin film includes forming a polysilicon layer, treating a surface of the polysilicon layer so that the surface of the polysilicon layer is electronegative, and supplying polar gas into a process chamber so that polar molecules of the polar gas are adsorbed on the surface of the polysilicon layer which is electronegative so as to form the polysilicon thin film, a surface of which has a hole density higher than an electron density.
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Patent Agency Ranking
公开(公告)号：US20250151507A1
公开(公告)日：2025-05-08
申请号：US18261241
申请日：2022-06-30
Inventor： Youqin ZHU , Dong LI , Yichi ZHANG
IPC: H10K50/16 , H10K50/115 , H10K59/12 , H10K59/35 , H10K102/00
Abstract: A display panel includes a plurality of light-emitting devices. Any light-emitting device includes a first electrode, a second electrode, a quantum dot light-emitting layer, and at least two electron transporting layers. The quantum dot light-emitting layer is located between the first electrode and the second electrode. The at least two electron transporting layers are stacked and located between the second electrode and the quantum dot light-emitting layer. The plurality of light-emitting devices include a first light-emitting device used to emit light of a first color, and a second light-emitting device used to emit light of a second color; and a wavelength of the light of the first color is greater than a wavelength of the light of the second color. A number of electron transporting layers in the first light-emitting device is less than a number of electron transporting layers in the second light-emitting device.
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57.发明申请公开(公告)号：US20250081845A1
公开(公告)日：2025-03-06
申请号：US18580630
申请日：2022-08-04
Inventor： Dong LI
IPC: H10K85/60 , H10K50/115 , H10K50/16 , H10K101/40
Abstract: A quantum dot light-emitting device and a preparation method therefor, and a display apparatus. The quantum dot light-emitting device comprises: a quantum dot light-emitting layer; a carrier transport layer, which is located on at least one side of the quantum dot light-emitting layer; and a monomolecular layer, which is located between the carrier transport layer and the quantum dot light-emitting layer, wherein the material of the monomolecular layer is configured in such a way that a molecular configuration thereof is converted from a cis-configuration to a trans-configuration under a visible light irradiation condition or a heating condition, and the molecular configuration thereof is converted from the trans-configuration to the cis-configuration under an ultraviolet irradiation condition, and the molecular chain length of the trans-configuration is greater than the molecular chain length of the cis-configuration.
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58.发明公开公开(公告)号：US20240172469A1
公开(公告)日：2024-05-23
申请号：US17772612
申请日：2021-05-31
Inventor： Dong LI
IPC: H10K50/16 , H10K50/115 , H10K71/13 , H10K101/40 , H10K102/00
CPC classification number: H10K50/166 , H10K50/115 , H10K71/13 , H10K2101/40 , H10K2102/351
Abstract: Embodiments of the present disclosure provide a quantum dot light emitting diode, a method for manufacturing a quantum dot light emitting diode and a display device. The quantum dot light emitting diode includes an anode layer, a cathode layer, a quantum dot light emitting layer between the anode layer and the cathode layer, and an electron transport layer between the cathode layer and the quantum dot light emitting layer, the electron transport layer includes at least a first energy level structure layer, a second energy level structure layer, and another first energy level structure layer, which are sequentially stacked, the first energy level structure layer is different from the second energy level structure layer, and a Lowest Unoccupied Molecular Orbital energy level of the first energy level structure layer is different from that of the second energy level structure layer.
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公开(公告)号：US20240057441A1
公开(公告)日：2024-02-15
申请号：US18270918
申请日：2021-02-26
Inventor： Dong LI
Abstract: The present disclosure provides a light-emitting transistor and a display substrate. The display substrate includes a plurality of pixel circuits. Each pixel circuit uses a light-emitting transistor that integrates a control transistor and a quantum dot light-emitting device in the same device, and the light-emitting transistor can simultaneously realize the functions of switch controlling and light-emitting display.
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公开(公告)号：US20230078114A1
公开(公告)日：2023-03-16
申请号：US17802564
申请日：2021-05-21
Inventor： Dong LI , Boris KRISTAL
IPC: H01L33/00
Abstract: Disclosed are a light-emitting diode (LED) device, a manufacturing method thereof, and a display panel. The LED device includes a base substrate, a first electrode layer, an electron transport layer, a quantum dot light-emitting layer and a second electrode layer. The first electrode layer is laminated on the base substrate; the electron transport layer is laminated on a surface of the first electrode layer away from the base substrate; the quantum dot light-emitting layer is laminated on a surface of the electron transport layer away from the first electrode layer; the second electrode layer is laminated on the surface of the quantum dot light-emitting layer away from the electron transport layer; wherein the surface of the electron transport layer away from the first electrode layer is a first concave-convex surface including a plurality of protrusions.
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