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1.发明公开公开(公告)号：US20240164187A1
公开(公告)日：2024-05-16
申请号：US17756178
申请日：2021-03-11
发明人： Dong LI
IPC分类号： H10K59/80 , H10K50/115 , H10K50/15 , H10K50/16 , H10K59/35 , H10K71/10 , H10K101/40 , H10K102/00
CPC分类号： H10K59/876 , H10K50/156 , H10K50/16 , H10K71/10 , H10K50/115 , H10K59/35 , H10K2101/40 , H10K2102/351
摘要： Embodiments of the present disclosure disclose a green quantum dot light-emitting device, a method for manufacturing the same, and a display apparatus, including: a first cathode and a first anode opposite to each other, a green quantum dot light-emitting layer between the first cathode and the first anode, a first electron transport layer between the first cathode and the green quantum dot light-emitting layer, and a first hole transport layer between the green quantum dot light-emitting layer and the first anode; wherein a material of the first electron transport layer includes an oxide containing Zn, a thickness of the first electron transport layer is in the range of 10 nm to 40 nm, and a thickness of the first hole transport layer is in the range of 26 nm to 39 nm.
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公开(公告)号：US20220344604A1
公开(公告)日：2022-10-27
申请号：US17764425
申请日：2021-05-12
发明人： Dong LI
摘要： An electroluminescent device, a display substrate, and a display apparatus. The electroluminescent device comprises: an electron transport layer (1) and a quantum dot light emitting layer (3) that are arranged in a stack mode; and an ionic complex layer (2) located between the electron transport layer (1) and the quantum dot light emitting layer (3), wherein a built-in electric field is formed in the ionic complex layer (2).
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3.发明申请公开(公告)号：US20220310953A1
公开(公告)日：2022-09-29
申请号：US17517252
申请日：2021-11-02
发明人： Dong LI
摘要： The present disclosure discloses a quantum dot material, a quantum dot light-emitting device, a display device, and a manufacturing method to solve the problems in the prior art that carrier transport is hindered, the electrical performance of the device is reduced, and the luminous efficiency is reduced after a quantum dot film layer is patterned. The quantum dot material includes: a quantum dot body, linkers, and first ligands; wherein one ends of the linkers are connected with the quantum dot body, and the other ends of the linkers are connected with the first ligands; and each first ligand includes one or a combination of:
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4.发明公开公开(公告)号：US20240306412A1
公开(公告)日：2024-09-12
申请号：US18270849
申请日：2021-02-23
发明人： Dong LI
IPC分类号： H10K50/115 , H10K50/16 , H10K71/40
CPC分类号： H10K50/115 , H10K50/16 , H10K71/421
摘要： Disclosed are a quantum dot light-emitting device and a manufacturing method therefor, and a display apparatus, including: coating a substrate with a quantum dot solution, wherein each quantum dot includes a quantum dot body and a first crosslinkable ligand connected to the surface of the quantum dot body, and when the quantum dots are in a solution state, the first crosslinkable ligand is in a decrosslinking state; carrying out cross-linking reaction on the first crosslinkable ligand of the quantum dots at a first temperature; using laser to irradiate a quantum dot region to be removed after the crosslinking reaction, the quantum dots in said region being decrosslinked at a second temperature generated by laser irradiation, and a difference between the second temperature and the first temperature being greater than a preset value; and removing the quantum dots in said region to form a patterned quantum dot layer.
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公开(公告)号：US20240298459A1
公开(公告)日：2024-09-05
申请号：US18041083
申请日：2022-02-18
IPC分类号： H10K50/16 , H10K50/115 , H10K50/15 , H10K59/122 , H10K59/35 , H10K71/00 , H10K102/00
CPC分类号： H10K50/166 , H10K50/115 , H10K50/156 , H10K59/122 , H10K59/353 , H10K71/00 , H10K2102/351
摘要： The embodiments of the present disclosure provide a display substrate, an electroluminescent device and a manufacturing method thereof, the display substrate includes: a base substrate; a pixel definition layer, in which the pixel definition layer includes a plurality of openings, the openings correspond to a plurality of sub-pixel regions, the sub-pixel regions include a first sub-pixel region and a second sub-pixel region; a first color quantum dot layer, in the first sub-pixel region; a second color quantum dot layer, in the second sub-pixel region; a first auxiliary layer, at least including a first portion and a second portion spaced apart from each other, the first portion is on a side of the first color quantum dot layer away from the base substrate, the second portion is on a side of the second color quantum dot layer close to the base substrate.
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6.发明公开公开(公告)号：US20240274756A1
公开(公告)日：2024-08-15
申请号：US18042944
申请日：2022-02-23
发明人： Dong LI
IPC分类号： H01L33/50 , H01L25/075 , H01L33/00 , H01L33/04
CPC分类号： H01L33/502 , H01L25/0753 , H01L33/005 , H01L33/04
摘要： A light-emitting device includes a first electrode, an electron transporting layer disposed on a side of the first electrode, a quantum dot light-emitting layer disposed on a side of the electron transporting layer away from the first electrode, a second electrode disposed on a side of the quantum dot light-emitting layer away from the first electrode, and a plurality of adjustment patterns disposed between the first electrode and the quantum dot light-emitting layer. Orthographic projections of the plurality of adjustment patterns on a reference plane are distributed at intervals. The plurality of adjustment patterns are each in contact with the electron transporting layer. At least a portion of an orthographic projection of the electron transporting layer on the reference plane is located in a gap between the orthographic projections of the plurality of adjustment patterns on the reference plane.
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公开(公告)号：US20210288281A1
公开(公告)日：2021-09-16
申请号：US17255569
申请日：2020-02-26
发明人： Dong LI , Wenhai MEI , Boris KRISTAL
摘要： A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV.
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公开(公告)号：US20240215419A1
公开(公告)日：2024-06-27
申请号：US17913295
申请日：2021-11-09
发明人： Dong LI
IPC分类号： H10K59/80 , H10K50/115 , H10K59/122
CPC分类号： H10K59/8794 , H10K50/115 , H10K59/122
摘要： The present disclosure provides a light-emitting substrate and a light-emitting device. The light-emitting substrate includes: a first electrode layer on a base substrate; a pixel definition layer arranged on a part of the first electrode layer and a part of the base substrate not covered by the first electrode layer, the pixel definition layer including at least two pixel definition aperture regions and a non-pixel aperture region other than the pixel definition aperture regions, the non-pixel aperture region being arranged with a groove on a side surface away from the base substrate, and a first thermally-conductive member being arranged in the groove; a first functional layer, a light-emitting layer and a second functional layer arranged in the pixel definition aperture regions; and a second electrode covering the second functional layer and the pixel definition layer, the second electrode being coupled to the first thermally-conductive member.
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公开(公告)号：US20210043864A1
公开(公告)日：2021-02-11
申请号：US16965625
申请日：2019-12-18
发明人： Dong LI
摘要： A quantum dot light emitting diode (QLED) device and a manufacturing method thereof are provided. The QLED device includes a quantum dot light emitting layer, a first electrode, and an electron transport layer between the quantum dot light emitting layer and the first electrode. The electron transport layer has multiple electron transport sub-layers. For any two electron transport sub-layers among the multiple electron transport sub-layers, a lowest unoccupied molecular orbital (LUMO) energy level of one electron transport sub-layer close to the quantum dot light emitting layer is higher than an LUMO energy level of another electron transport sub-layer far away from the quantum dot light emitting layer, and an LUMO energy level of each of the multiple electron transport sub-layers is lower than an LUMO energy level of the quantum dot light emitting layer and higher than a work function of the first electrode.
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10.发明公开公开(公告)号：US20240363796A1
公开(公告)日：2024-10-31
申请号：US18768451
申请日：2024-07-10
CPC分类号： H01L33/06 , H01L33/005 , H01L33/14 , H10K50/15 , H10K71/00
摘要： A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.
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