Abstract:
A phase change memory (PCM) cell fabricated by etching a tapered structure into a phase change layer, and planarizing a dielectric layer on the phase change layer until a tip of the tapered structure is exposed for contacting a heating electrode. Therefore, the area of the exposed tip of the phase change layer is controlled to be of an extremely small size, the contact area between the phase change layer and the heating electrode is reduced, thereby lowering the operation current.
Abstract:
A method and a device for detecting a synchronization signal with a high identification rate are provided, which are suitable for a wide-area Orthogonal Frequency Division Multiplexing (OFDM) system. The method and device can precisely detect information of a synchronization signal, without being interfered by transmission channels and noises in an external environment. Three sliding windows are used to obtaining a balance value as an offset value for the output signal of the method and the device. A peak position of the output signal is identified and then compensated for a delay caused by the length of one of the sliding windows. Such a position is an edge of the synchronization signal.
Abstract:
A phase-change memory layer and method for manufacturing the same and a phase-change memory cell are provided. The phase-change memory layer is crystallized by adding one or more heterogeneous crystals that do not react with phase-change materials as the crystal nucleus, so as to reduce the time for transforming to the crystalline state from the amorphous state.