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106 条记录 (耗时 0.038 秒)

    OPTICALLY GATED MEMS SWITCH
    51.
    发明申请
    OPTICALLY GATED MEMS SWITCH 有权
    光电式MEMS开关

    公开(公告)号：US20100237227A1

    公开(公告)日：2010-09-23

    申请号：US12408937

    申请日：2009-03-23

    申请人： Glen Peter Koste ,  Kathleen Ann O'Brien ,  Kanakasabapathi Subramanian ,  John Norton Park

    发明人： Glen Peter Koste ,  Kathleen Ann O'Brien ,  Kanakasabapathi Subramanian ,  John Norton Park

    IPC分类号： H03K17/94

    CPC分类号： H03K17/941 ,  H01H59/0009

    摘要： An optically powered MEMS gate driver includes a photovoltaic converter configured to receive a light signal from a light source and output a DC supply voltage for a MEMS gate driver in response thereto. The MEMS gate driver further includes a DC to DC converter electrically coupled to the photovoltaic converter and configured to output a line level DC voltage in response to the DC supply voltage. An electrical circuit, also included as a portion of the MEMS gate driver is electrically coupled to both the photovoltaic converter and the DC to DC converter is configured to receive the supply voltage and the line level voltage and to output a line level drive signal in response thereto. The optically powered MEMS gate driver is self-contained within a common EMI enclosure thus providing isolation between the gate driver and command signal electronics.

    摘要翻译： 光学驱动的MEMS栅极驱动器包括光电转换器，其被配置为从光源接收光信号，并响应于此向MEMS栅极驱动器输出DC电源电压。 MEMS栅极驱动器还包括电耦合到光伏转换器并被配置为响应于DC电源电压输出线路电平DC电压的DC-DC转换器。 还包括作为MEMS栅极驱动器的一部分的电路电耦合到光伏转换器和DC-DC转换器两者被配置为接收电源电压和线路电平电压并且响应地输出线路电平的驱动信号 到此。 光学驱动的MEMS栅极驱动器是独立于普通的EMI外壳内，从而提供栅极驱动器和命令信号电子器件之间的隔离。

    Multi-finger z-actuator
    54.
    发明授权
    Multi-finger z-actuator 有权
    多指z致动器

    公开(公告)号：US07504757B2

    公开(公告)日：2009-03-17

    申请号：US11375860

    申请日：2006-03-15

    申请人： Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

    发明人： Kanakasabapathi Subramanian ,  Xiaojun T. Huang ,  Noel C. MacDonald

    IPC分类号： H02N1/00 ,  G02B26/08

    CPC分类号： B81C1/00626 ,  B81B2201/033 ,  H01L21/3086

    摘要： Multi-level structures are formed in a semiconductor substrate by first forming a pattern of lines or structures of different widths. Width information on the pattern is decoded by processing steps into level information to form a MEMS structure. The pattern is etched to form structures having a first floor. The structures are oxidized until structures of thinner width are substantially fully oxidized. A portion of the oxide is then etched to expose the first floor. The first floor is then etched to form a second floor. The oxide is then optionally removed, leaving a multi-level structure. In one embodiment, high aspect ratio comb actuators are formed using the multi-level structure process.

    摘要翻译： 通过首先形成不同宽度的线或结构的图案，在半导体衬底中形成多层结构。 图案上的宽度信息通过处理步骤被解码成级信息以形成MEMS结构。 蚀刻图案以形成具有一层的结构。 结构被氧化，直到较薄宽度的结构基本上被完全氧化。 然后蚀刻一部分氧化物以露出第一层。 然后蚀刻第一层以形成二楼。 然后任选地除去氧化物，留下多层结构。 在一个实施例中，使用多层结构工艺形成高纵横比梳状致动器。

    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device
    57.
    发明申请
    Gating Voltage Control System And Method For Electrostatically Actuating A Micro-Electromechanical Device 有权
    静电驱动微机电装置门控电压控制系统及方法

    公开(公告)号：US20080169707A1

    公开(公告)日：2008-07-17

    申请号：US11622483

    申请日：2007-01-12

    申请人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    发明人： Joshua Isaac Wright ,  Kanakasabapathi Subramanian ,  William James Premerlani ,  John Norton Park ,  Christopher Keimel ,  Long Que ,  Kuna Venkat Satya Rama Kishore ,  Abhijeet Dinkar Sathe ,  Xuefeng Wang ,  Edward Keith Howell

    IPC分类号： H01H9/54

    CPC分类号： H01H59/0009 ,  H01H47/22 ,  Y10T307/937

    摘要： A gating voltage control system and method are provided for electrostatically actuating a micro-electromechanical systems (MEMS) device, e.g., a MEMS switch. The device may comprise an electrostatically responsive actuator movable through a gap for actuating the device to a respective actuating condition corresponding to one of a first actuating condition (e.g., a closed switching condition) and a second actuating condition (e.g., an open switching condition). The gating voltage control system may comprise a drive circuit electrically coupled to a gate terminal of the device to apply a gating voltage. The gating voltage control system may further comprise a controller electrically coupled to the drive circuit to control the gating voltage applied to the gating terminal in accordance with a gating voltage control sequence. The gating voltage control sequence may comprise a first interval for ramping up the gating voltage to a voltage level for producing an electrostatic force sufficient to accelerate the actuator through a portion of the gap to be traversed by the actuator to reach a respective actuating condition. The gating voltage control sequence may further comprise a second interval for ramping down the gating voltage to a level sufficient to reduce the electrostatic force acting on the movable actuator. This allows reducing the amount of force at which the actuator engages a contact for establishing the first actuating condition, or avoiding an overshoot position of the actuator while reaching the second actuating condition.

    摘要翻译： 提供了门控电压控制系统和方法，用于静电致动微机电系统（MEMS）装置，例如MEMS开关。 该装置可以包括静电响应致动器，其可通过间隙移动，以将装置致动到对应于第一致动状态（例如，闭合开关状态）和第二致动状态（例如，开启状态）之一的相应致动状态， 。 门控电压控制系统可以包括电耦合到该器件的栅极端子以施加选通电压的驱动电路。 门控电压控制系统还可以包括电耦合到驱动电路的控制器，以根据门控电压控制顺序控制施加到门控端子的门控电压。 门控电压控制序列可以包括用于将门控电压升高到电压电平的第一间隔，用于产生足以通过由致动器穿过的间隙的一部分来加速致动器以达到相应的致动状态的静电力。 门控电压控制序列还可以包括用于将门控电压降低到足以减小作用在可移动致动器上的静电力的水平的第二间隔。 这允许减小致动器接合接触件以建立第一致动条件的力的量，或者避免致动器在达到第二致动状态时的过冲位置。

    MICROELECTROMECHANICAL SYSTEM PRESSURE SENSOR AND METHOD FOR MAKING AND USING
    60.
    发明申请
    MICROELECTROMECHANICAL SYSTEM PRESSURE SENSOR AND METHOD FOR MAKING AND USING 失效
    微电子系统压力传感器及其制造和使用方法

    公开(公告)号：US20070141808A1

    公开(公告)日：2007-06-21

    申请号：US11677629

    申请日：2007-02-22

    申请人： Jeffrey Fortin ,  Guanghua Wu ,  Kanakasabapathi Subramanian

    发明人： Jeffrey Fortin ,  Guanghua Wu ,  Kanakasabapathi Subramanian

    IPC分类号： H01L21/30 ,  H01L21/46

    CPC分类号： G01L9/0073 ,  G01L1/148

    摘要： According to some embodiments, a conducting layer is formed on a first wafer. An insulating layer is formed on a second wafer. The insulating layer includes a cavity and a conducting area may be formed in the second wafer proximate to the cavity. The side of the conducting layer opposite the first wafer is bonded to the side of the insulating layer opposite the second wafer. At least some of the first wafer is then removed, without removing at least some of the conducting layer, to form a conducting diaphragm that is substantially parallel to the second wafer. In this way, an amount of capacitance between the diaphragm and the conducting area may be measured to determine an amount of pressure being applied to the diaphragm.

    摘要翻译： 根据一些实施例，在第一晶片上形成导电层。 在第二晶片上形成绝缘层。 绝缘层包括空腔，并且导电区域可以形成在靠近空腔的第二晶片中。 与第一晶片相对的导电层的一侧被结合到与第二晶片相对的绝缘层的一侧。 然后去除至少一些第一晶片，而不去除至少一些导电层，以形成基本上平行于第二晶片的导电隔膜。 以这种方式，可以测量隔膜和导电区域之间的电容量，以确定施加到隔膜的压力的量。