Mems coupler and method to form the same
    51.
    发明申请
    Mems coupler and method to form the same 有权
    Mems耦合器和方法形成相同

    公开(公告)号:US20110068422A1

    公开(公告)日:2011-03-24

    申请号:US12927312

    申请日:2010-11-10

    IPC分类号: H01L29/66

    CPC分类号: B81C1/00039 B81B2201/0271

    摘要: A MEMS coupler and a method to form a MEMS structure having such a coupler are described. In an embodiment, a MEMS structure comprises a member and a substrate. A coupler extends through a portion of the member and connects the member with the substrate. The member is comprised of a first material and the coupler is comprised of a second material. In one embodiment, the first and second materials are substantially the same. In one embodiment, the second material is conductive and is different than the first material. In another embodiment, a method for fabricating a MEMS structure comprises first forming a member above a substrate. A coupler comprised of a conductive material is then formed to connect the member with the substrate.

    摘要翻译: 描述了MEMS耦合器和形成具有这种耦合器的MEMS结构的方法。 在一个实施例中,MEMS结构包括构件和衬底。 耦合器延伸穿过构件的一部分并将构件与衬底连接。 该构件由第一材料构成,并且该耦合器由第二材料构成。 在一个实施例中,第一和第二材料基本相同。 在一个实施例中,第二材料是导电的并且不同于第一材料。 在另一个实施例中,一种用于制造MEMS结构的方法包括首先在衬底上形成构件。 然后形成由导电材料构成的耦合器,以将该构件与衬底连接。

    Microshells for multi-level vacuum cavities
    52.
    发明授权
    Microshells for multi-level vacuum cavities 有权
    用于多层真空腔的微型壳

    公开(公告)号:US07659150B1

    公开(公告)日:2010-02-09

    申请号:US11716156

    申请日:2007-03-09

    IPC分类号: H01L21/00

    摘要: Microshells for encapsulation of devices such as MEMS and microelectronics. In an embodiment, the microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation as a function of the dimension of the perforation to form cavities having different vacuum levels on the same substrate.

    摘要翻译: 用于封装MEMS和微电子等器件的微型外壳。 在一个实施例中,微壳包括平面穿孔的预密封层,在其下面存取非平面牺牲层,以及密封层,用于在去除牺牲材料之后封闭预密封层中的穿孔。 密封层可以包括非密封层,以物理地闭塞穿孔,并且在非密封闭塞层上方形成密封层,以密封穿孔,作为穿孔尺寸的函数,以在同一基底上形成具有不同真空度的空腔。

    Low stress thin film microshells
    53.
    发明授权
    Low stress thin film microshells 有权
    低应力薄膜微壳

    公开(公告)号:US07595209B1

    公开(公告)日:2009-09-29

    申请号:US11716233

    申请日:2007-03-09

    IPC分类号: H01L21/56 H01L21/50

    摘要: Multi-layered, planar microshells having low stress for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The sealing layer may further include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. The various layers may be formed employing processes having opposing stresses to tune the residual stress of the multi-layered microshell. In an embodiment, the hermetic layer is a metal which is deposited with a process tuned to impart a tensile stress to lower the residual stress in the microshell below the magnitude of cumulative stress present in sealing layer and pre-sealing layer.

    摘要翻译: 具有低应力的多层平面微壳体,用于诸如MEMS和微电子器件的封装。 微壳可以包括穿孔的预密封层,在其下方存取牺牲层,以及密封层,用于在去除牺牲材料之后封闭预密封层中的穿孔。 密封层还可以包括非密封层,以物理地封闭穿孔,并且在非密封闭塞层上方形成密封层以密封穿孔。 可以使用具有相反应力的工艺来形成各个层,以调节多层微壳的残余应力。 在一个实施例中,密封层是金属,其沉积有被调整以赋予拉伸应力的工艺,以将微壳中的残余应力降低到低于存在于密封层和预密封层中的累积应力的大小。

    Damascene process for use in fabricating semiconductor structures having micro/nano gaps
    54.
    发明授权
    Damascene process for use in fabricating semiconductor structures having micro/nano gaps 有权
    用于制造具有微/纳米间隙的半导体结构的镶嵌工艺

    公开(公告)号:US07256107B2

    公开(公告)日:2007-08-14

    申请号:US11121690

    申请日:2005-05-03

    摘要: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

    摘要翻译: 在制造微机电结构(MEMS)中,在MEMS中形成窄间隙的方法包括:a)在支撑衬底的表面上沉积牺牲材料层,b)光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片,c)在所述牺牲层上沉积结构层,以及d)去除包括所述牺牲材料刀片的所述牺牲层,其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

    Temperature compensated oscillator including MEMS resonator for frequency control
    55.
    发明授权
    Temperature compensated oscillator including MEMS resonator for frequency control 有权
    温度补偿振荡器包括用于频率控制的MEMS谐振器

    公开(公告)号:US07211926B2

    公开(公告)日:2007-05-01

    申请号:US11361814

    申请日:2006-02-23

    IPC分类号: H03B28/00 H03B5/04

    摘要: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.

    摘要翻译: 公开了一种振荡器,其依赖于集成在芯片上的类似谐振器的冗余,以满足一个单个石英谐振器的要求。 与石英技术相比,该方法的直接好处是参考信号功能的单一集成,意味着较小的器件以及成本和功率节省。