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公开(公告)号：US11939215B2
公开(公告)日：2024-03-26
申请号：US17266482
申请日：2019-10-04
Applicant: Robert Bosch GmbH
Inventor： Penny Weir , Markus Kuhnke , Stefan Majoni
CPC classification number: B81C1/00698 , B81B3/0018 , B81B2201/0271 , B81C2203/0145
Abstract: A microelectromechanical structure, including a functional element situated in a cavity of the microelectromechanical structure. The functional element includes an aluminum nitride layer. The cavity is closed by a cap layer. The cap layer includes epitaxial silicon. A method for manufacturing a micromechanical structure is also described.
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公开(公告)号：US20230365399A1
公开(公告)日：2023-11-16
申请号：US18316410
申请日：2023-05-12
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Petteri KILPINEN
CPC classification number: B81B7/0041 , B81C1/00293 , B81B2201/0235 , B81B2201/0242 , B81C2203/0145
Abstract: A microelectromechanical is provided that includes a support layer, a device layer and a cap layer, a first cavity and a second cavity. The first cavity and the second cavity are delimited by the support layer, the device layer and the cap layer. Moreover, the cap layer includes a through-hole that extends from the top surface of the cap layer to the first cavity. The microelectromechanical component includes a plug inside the through-hole and that seals the first cavity.
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公开(公告)号：US20190047851A1
公开(公告)日：2019-02-14
申请号：US16160683
申请日：2018-10-15
Inventor： Kai-Chih Liang , Chia-Hua Chu , Te-Hao Lee , Jiou-Kang Lee , Chung-Hsien Lin
CPC classification number: B81C1/00515 , B81B7/0006 , B81B7/0077 , B81B2201/0235 , B81B2203/0315 , B81B2207/07 , B81B2207/095 , B81B2207/096 , B81C1/00293 , B81C1/00301 , B81C2201/0132 , B81C2201/014 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/035 , H01L2224/11
Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.
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公开(公告)号：US20180346324A1
公开(公告)日：2018-12-06
申请号：US15780282
申请日：2016-10-12
Applicant: Robert Bosch GmbH
Inventor： Achim Breitling , Eckhard Graf , Jens Frey , Jochen Reinmuth , Mawuli Ametowobla
CPC classification number: B81C1/00285 , B81B7/0038 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315 , B81C2203/0145 , G01P1/023 , G01P1/026
Abstract: A method for manufacturing a micromechanical component including a substrate and a cap which is joined to the substrate, and, together with the substrate, encloses a first cavity, a first pressure prevailing and a first gas mixture having a first chemical composition being enclosed in the first cavity. In a first step, an access opening connecting the first cavity to surroundings of the micromechanical component being formed in the substrate or in the cap. In a second step, the first pressure and/or the first chemical composition in the first cavity being set. In a third step, the access opening being sealed by introducing energy or heat into an absorbing portion of the substrate or the cap with the aid of a laser, a reversible getter for further setting the first pressure and/or the first chemical composition being introduced into the first cavity chronologically prior to the third step.
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公开(公告)号：US10017383B2
公开(公告)日：2018-07-10
申请号：US14883825
申请日：2015-10-15
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Stephen E. Luce , Anthony K. Stamper
CPC classification number: B81C1/00698 , B81C1/0015 , B81C1/00166 , B81C1/00523 , B81C2201/0132 , B81C2201/0133 , B81C2201/0145 , B81C2201/0154 , B81C2203/0145 , H01H1/0036 , H01H1/58 , H01H11/00 , H01H49/00 , H01H59/00 , H01H59/0009 , H01H2059/0018 , Y10T29/49105
Abstract: An approach includes a method of fabricating a switch. The approach includes forming a fixed electrode, forming a first cantilevered electrode, forming a second cantilevered electrode aligned vertically over the first fixed electrode, and which has an end that overlaps and is operable to directly contact an end of the first cantilevered electrode upon an application of a voltage to the fixed electrode, and forming a hermetically sealed volume encapsulating the first fixed electrode, the second fixed electrode, the first cantilevered electrode, and the second cantilevered electrode.
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Patent Agency Ranking
公开(公告)号：US20180179052A1
公开(公告)日：2018-06-28
申请号：US15894119
申请日：2018-02-12
Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor： Michael T. Brigham , Christopher V. Jahnes , Cameron E. Luce , Jeffrey C. Maling , William J. Murphy , Anthony K. Stamper , Eric J. White
CPC classification number: B81C1/0015 , B81B3/0021 , B81B2203/0118 , B81B2203/0315 , B81B2207/09 , B81C1/00047 , B81C1/00269 , B81C1/00365 , B81C1/00531 , B81C1/00936 , B81C2201/0104 , B81C2201/0107 , B81C2201/0121 , B81C2201/0125 , B81C2201/0132 , B81C2201/0176 , B81C2201/0181 , B81C2203/0109 , B81C2203/0145 , B81C2203/0714 , G06F17/5009
Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming a Micro-Electro-Mechanical System (MEMS) beam structure by venting both tungsten material and silicon material above and below the MEMS beam to form an upper cavity above the MEMS beam and a lower cavity structure below the MEMS beam.
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公开(公告)号：US09997370B2
公开(公告)日：2018-06-12
申请号：US15206926
申请日：2016-07-11
Applicant: SEIKO EPSON CORPORATION
Inventor： Takahiko Yoshizawa
IPC: H01L21/3105 , B81C1/00 , H01L23/532
CPC classification number: H01L21/31053 , B81B2201/0271 , B81C1/00293 , B81C2203/0136 , B81C2203/0145 , H01L23/53214
Abstract: An electronic apparatus according to the invention includes a substrate, a side wall that is disposed directly on the substrate or via an insulation film and forms a hollow, a functional element that is disposed within the hollow, a first layer that is disposed on the side wall so as to cover the hollow and has a first through hole that communicates with the hollow, a second layer that is disposed on the first layer so as to cover the hollow and has a second through hole that has a diameter smaller than a diameter of the first through hole and at least partially overlaps the first through hole as viewed in plan view, and a third layer that is disposed on the second layer so as to seal at least the second through hole.
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公开(公告)号：US20180148320A1
公开(公告)日：2018-05-31
申请号：US15694176
申请日：2017-09-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chih-Chien Yang , Ming-Lun Shih , Ren-Dou Lee , Jen-Hao Liu
CPC classification number: B81B7/0041 , B81B2201/0264 , B81B2207/097 , B81C1/00293 , B81C2203/0145 , B81C2203/036 , G01L9/0048 , G01L9/0072 , G01L9/008
Abstract: A multi-layer sealing film for high seal yield is provided. In some embodiments, a substrate comprises a vent opening extending through the substrate, from an upper side of the substrate to a lower side of the substrate. The upper side of the substrate has a first pressure, and the lower side of the substrate has a second pressure different than the first pressure. The multi-layer sealing film covers and seals the vent opening to prevent the first pressure from equalizing with the second pressure through the vent opening. Further, the multi-layer sealing film comprises a pair of metal layers and a barrier layer sandwiched between metal layers. Also provided is a microelectromechanical systems (MEMS) package comprising the multilayer sealing film, and a method for manufacturing the multi-layer sealing film.
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9.发明授权公开(公告)号：US09957154B2
公开(公告)日：2018-05-01
申请号：US15320719
申请日：2015-07-07
Applicant: ULIS
Inventor： Jérôme Favier , David Bunel
CPC classification number: B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C1/00285 , B81C2203/0145 , B81C2203/019 , G01J5/20 , H01L23/564 , H01L31/186 , H01L2224/48091 , H01L2924/00014
Abstract: A method of manufacturing a device having a microelectronic component housed in a hermetically sealed vacuum housing, including forming a getter in said housing, pumping out and heating the device to degas elements housed in said housing, after said pumping, hermetically sealing the housing in fluxless fashion.Further, each material forming the device likely to degas into the inner space is a mineral material, the getter is capable of substantially trapping hydrogen only and is inert to oxygen and/or to nitrogen and the heating and the sealing are performed at a temperature lower than 300° C.
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公开(公告)号：US20180106828A1
公开(公告)日：2018-04-19
申请号：US15785891
申请日：2017-10-17
Applicant: Robert Bosch GmbH
Inventor： Antoine Puygranier , Denis Gugel , Guenther-Nino-Carlo Ullrich , Markus Linck-Lescanne , Sebastian Guenther , Timm Hoehr
IPC: G01P15/03
CPC classification number: G01P15/03 , B81B2201/0235 , B81C1/00333 , B81C2203/0145 , G01P15/0802 , G01P2015/0831
Abstract: A micromechanical z-acceleration sensor, including a seismic mass element including a torsion spring; the torsion spring including an anchor element, with the aid of which the torsion spring is connected to a substrate; the torsion spring being connected at both ends to the seismic mass element with the aid of a bar-shaped connecting element designed as normal with respect to the torsion spring in the plane of the seismic mass element.
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