公开(公告)号：US5061646A

公开(公告)日：1991-10-29

申请号：US631174

申请日：1990-12-19

申请人： Richard D. Sivan ,  James D. Hayden

发明人： Richard D. Sivan ,  James D. Hayden

IPC分类号： H01L21/225 ,  H01L21/285 ,  H01L21/331 ,  H01L21/60

CPC分类号： H01L21/76897 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/28525 ,  H01L29/66272 ,  Y10S148/011 ,  Y10S148/124

摘要： A structure and process for fabricating a fully self-aligned high-performance bipolar semiconductor device is disclosed. In accordance with one embodiment of the invention, a substrate is provided having a first surface. A heavily doped buried layer is formed in the substrate extending from the first surface and a lightly doped epitaxial layer overlies the first surface. An isolation region is formed in the epitaxial layer dividing the epitaxial layer into an active surface region and an isolation region. A base electrode is formed on a first portion of the active surface region having an opening which exposes a second portion of the active surface region. An emitter electrode, which is self-aligned to the base electrode, overlies a portion of the base electrode and extends through the opening in the base electrode making contact with the second portion of the active surface region. A collector plug is self-aligned to the active surface region at the edge of the base electrode and extends into the epitaxial layer making contact with the buried layer.

摘要翻译： 公开了一种用于制造完全自对准的高性能双极半导体器件的结构和工艺。 根据本发明的一个实施例，提供具有第一表面的基板。 在从第一表面延伸的衬底中形成重掺杂掩埋层，并且轻掺杂外延层覆盖在第一表面上。 在将外延层分为活性表面区域和隔离区域的外延层中形成隔离区域。 在具有露出活性表面区域的第二部分的开口的有源表面区域的第一部分上形成基极。 与基极自对准的发射电极覆盖在基极的一部分上，并延伸穿过基极中与该有源面区域的第二部分接触的开口。 收集器插塞与基极边缘的有源表面区域自对准并延伸到与掩埋层接触的外延层中。

公开(公告)号：US5024971A

公开(公告)日：1991-06-18

申请号：US570180

申请日：1990-08-20

申请人： Frank K. Baker ,  James D. Hayden

发明人： Frank K. Baker ,  James D. Hayden

IPC分类号： H01L21/308

CPC分类号： H01L21/3081 ,  H01L21/3086 ,  Y10S148/105 ,  Y10S148/147 ,  Y10S438/945 ,  Y10S438/947

摘要： The invention provides a method for patterning a submicron opening in a layer of semiconductor material. The method comprises use of conventional photolithography to position a sidewall spacer in a predetermined location on a semiconductor device. A layer of cobalt is selectively reacted with an underlying layer to form an image reversal layer which functions as a hard mask. The submicron features are then transferred into the underlying layer of semiconducting material by etching.

摘要翻译： 本发明提供了一种在半导体材料层中图形化亚微米开口的方法。 该方法包括使用常规光刻法将侧壁间隔物定位在半导体器件上的预定位置。 一层钴选择性地与下层反应以形成用作硬掩模的图像反转层。 然后通过蚀刻将亚微米特征转移到半导体材料的下层中。