Electrostatic RF MEMS switches
    51.
    发明申请
    Electrostatic RF MEMS switches 有权
    静电RF MEMS开关

    公开(公告)号:US20050040486A1

    公开(公告)日:2005-02-24

    申请号:US10951612

    申请日:2004-09-29

    摘要: A micro switch having a dielectric layer having a movement region formed on a substrate, a conductive layer formed on a predetermined portion of the movement region, a dielectric film formed on the conductive layer, first and second electric conductors formed a predetermined distance above the dielectric film, one or two lower electrodes formed on the movement region, and one or two upper electrodes formed a predetermined distance above the two lower electrodes, the one or two upper electrodes moving the conductive layer and the dielectric film upwards when an electrostatic force occurs between the upper and lower electrodes, and capacitively coupled with the first and second electric conductors to allow a current to flow between the first and second electric conductors. Such a micro switch has a high on/off ratio and isolation degree and a simple structure, and can be fabricated in a very easy process.

    摘要翻译: 一种具有介电层的微型开关,具有形成在基板上的移动区域,形成在所述移动区域的预定部分上的导电层,形成在所述导电层上的电介质膜,在所述电介质上形成预定距离的第一和第二导电体 膜,形成在移动区域上的一个或两个下电极,以及在两个下电极之上形成预定距离的一个或两个上电极,一个或两个上电极在静电力发生时向上移动导电层和电介质膜 上电极和下电极,并且与第一和第二电导体电容耦合以允许电流在第一和第二电导体之间流动。 这种微型开关具有高的开/关比和隔离度和简单的结构,并且可以在非常容易的过程中制造。