Ferroelectric information storage device and method of writing/reading information
    52.
    发明申请
    Ferroelectric information storage device and method of writing/reading information 失效
    铁电信息存储装置及信息读写方法

    公开(公告)号:US20070047290A1

    公开(公告)日:2007-03-01

    申请号:US11500890

    申请日:2006-08-09

    IPC分类号: G11C11/22

    摘要: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

    摘要翻译: 信息存储装置包括具有第一表面和与第一表面相对的第二表面的铁电层。 在铁电层的第一表面上形成公共电极层。 彼此分离的至少两个导电轨迹层位于铁电层的第二表面上。 提供具有由导电轨道层支撑的两个相对端的导电辊。 导电辊可沿着导电轨迹移动。 铁磁层在导电辊上产生磁场。

    Semiconductor probe having resistive tip and method of fabricating the same
    54.
    发明授权
    Semiconductor probe having resistive tip and method of fabricating the same 有权
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号:US07759954B2

    公开(公告)日:2010-07-20

    申请号:US11861417

    申请日:2007-09-26

    IPC分类号: G01R31/02

    摘要: Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

    摘要翻译: 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端,其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质,其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层,与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

    ELECTRIC FIELD SENSOR HAVING VERTICAL STRUCTURE, FABRICATION METHOD THEREOF, AND STORAGE UNIT USING THE SAME
    55.
    发明申请
    ELECTRIC FIELD SENSOR HAVING VERTICAL STRUCTURE, FABRICATION METHOD THEREOF, AND STORAGE UNIT USING THE SAME 有权
    具有垂直结构的电场传感器,其制造方法和使用该方法的存储单元

    公开(公告)号:US20090092033A1

    公开(公告)日:2009-04-09

    申请号:US12138055

    申请日:2008-06-12

    IPC分类号: G01R27/14 G11B9/02 H01L21/20

    CPC分类号: G11B9/02 B82Y10/00 G11B9/1409

    摘要: An electric field sensor includes a substrate having a low resistive semiconductor layer doped with a high-density dopant as the top layer of the substrate, a high resistive semiconductor layer doped with a low-density dopant, the high resistive semiconductor layer located at a partial area on the low resistive semiconductor layer, and a conductive layer located on the high resistive semiconductor layer, wherein a change of an electric field is detected by a change of a current flowing through the low resistive semiconductor layer, the high resistive semiconductor layer, and the conductive layer.

    摘要翻译: 电场传感器包括具有掺杂有作为衬底的顶层的高密度掺杂剂的低电阻半导体层的衬底,掺杂有低密度掺杂剂的高电阻半导体层,位于部分 低电阻半导体层上的区域和位于高电阻半导体层上的导电层,其中通过流过低电阻半导体层,高电阻半导体层和电阻半导体层的电流的变化来检测电场的变化, 导电层。

    Ferroelectric information storage device and method of writing/reading information
    56.
    发明授权
    Ferroelectric information storage device and method of writing/reading information 失效
    铁电信息存储装置及信息读写方法

    公开(公告)号:US07440302B2

    公开(公告)日:2008-10-21

    申请号:US11500890

    申请日:2006-08-09

    摘要: An information storage device includes a ferroelectric layer having a first surface and a second surface opposite the first surface. A common electrode layer is formed on the first surface of the ferroelectric layer. At least two conductive track layers separated from each other are positioned on the second surface of the ferroelectric layer. A conductive roller that has two opposite ends supported by the conductive track layers is provided. The conductive roller is movable along a conductive track. A ferromagnetic layer creates a magnetic field on the conductive roller.

    摘要翻译: 信息存储装置包括具有第一表面和与第一表面相对的第二表面的铁电层。 在铁电层的第一表面上形成公共电极层。 彼此分离的至少两个导电轨迹层位于铁电层的第二表面上。 提供具有由导电轨道层支撑的两个相对端的导电辊。 导电辊可沿着导电轨迹移动。 铁磁层在导电辊上产生磁场。

    SEMICONDUCTOR PROBE HAVING RESISTIVE TIP AND METHOD OF FABRICATING THE SAME
    57.
    发明申请
    SEMICONDUCTOR PROBE HAVING RESISTIVE TIP AND METHOD OF FABRICATING THE SAME 有权
    具有电阻提示的半导体探针及其制造方法

    公开(公告)号:US20080116926A1

    公开(公告)日:2008-05-22

    申请号:US11861417

    申请日:2007-09-26

    IPC分类号: G01R31/02 H01C17/00

    摘要: Provided are a semiconductor probe having a resistive tip and a method of fabricating the semiconductor probe. The semiconductor probe includes a resistive tip which is doped with a first impurity, and of which an apex portion is doped with a low concentration of a second impurity of opposite polarity to the first impurity, wherein first and second semiconductor electrode regions doped with a high concentration of the second impurity is formed on slopes of the resistive tip; a dielectric layer formed on the resistive tip; an electric field shield which is formed on the dielectric layer, and forms a plane together with the dielectric layer on the apex portion of the resistive tip; and a cantilever having an end on which the resistive tip is located.

    摘要翻译: 提供了具有电阻尖端的半导体探针和制造半导体探针的方法。 半导体探针包括掺杂有第一杂质的电阻尖端,并且其顶点部分掺杂有与第一杂质相反极性的低浓度第二杂质,其中掺杂高的第一和第二半导体电极区 第二杂质的浓度形成在电阻尖端的斜面上; 形成在电阻尖端上的电介质层; 形成在电介质层上的电场屏蔽层,与电阻顶端的顶点上的电介质层一起形成平面; 以及具有电阻尖端所在的端部的悬臂。

    High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus
    58.
    发明授权
    High-density data storage medium, method of manufacturing the data storage medium, data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus 有权
    高密度数据存储介质,数据存储介质的制造方法,数据存储装置以及通过使用数据存储装置向数据存储介质写入数据和读取和擦除数据的方法

    公开(公告)号:US07170843B2

    公开(公告)日:2007-01-30

    申请号:US10610540

    申请日:2003-07-02

    IPC分类号: H01J3/14

    摘要: A high-density data storage medium, a method of manufacturing the data storage medium, a high-density data storage apparatus, and methods of writing data on, and reading and erasing data from the data storage medium by using the data storage apparatus are provided. The data storage medium includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer. The data storage apparatus includes a stage supporting a data storage medium, which includes a lower electrode, an insulation layer deposited on the lower electrode, a photoelectron emission layer deposited on the insulation layer and having a plurality of protrusions from which photoelectrons are emitted due to collisions between the protrusions and photons, and a dielectric layer deposited on the photoelectron emission layer and storing the photoelectrons emitted from the photoelectron emission layer, a scanner driving the stage, a probe placed over the data storage medium and including a tip forming an electric field with the data storage medium and a cantilever supporting the tip placed at its one end so as to maintain a predetermined distance between the data storage medium and the tip, a circuit unit applying a driving signal, a data write signal, and a data erase signal to the scanner and the probe and detecting a data read signal, and a light source irradiating light on the data storage medium.

    摘要翻译: 提供高密度数据存储介质,数据存储介质的制造方法,高密度数据存储装置以及通过使用数据存储装置从数据存储介质写数据和读取和擦除数据的方法 。 数据存储介质包括下电极,沉积在下电极上的绝缘层,沉积在绝缘层上的光电子发射层,并且具有多个突起,由于突起和光子之间的碰撞而从其中发射光电子;以及电介质 层沉积在光电子发射层上并存储从光电子发射层发射的光电子。 该数据存储装置包括支持数据存储介质的载台,该载台包括下电极,沉积在下电极上的绝缘层,沉积在绝缘层上的光电子发射层,并且具有多个突起,由于 突起和光子之间的碰撞,以及沉积在光电子发射层上并存储从光电子发射层发射的光电子的介电层,驱动载物台的扫描仪,放置在数据存储介质上的探针,并且包括形成电场的尖端 数据存储介质和悬臂支撑设置在其一端的尖端,以便保持数据存储介质和尖端之间的预定距离,施加驱动信号的电路单元,数据写入信号和数据擦除信号 扫描仪和探头,并检测数据读取信号,以及光源照射数据 存储介质。

    Semiconductor probe with resistive tip and method of fabricating the same
    59.
    发明申请
    Semiconductor probe with resistive tip and method of fabricating the same 有权
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号:US20060157440A1

    公开(公告)日:2006-07-20

    申请号:US11322340

    申请日:2006-01-03

    IPC分类号: C23F1/00 B44C1/22 G01N23/00

    摘要: A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

    摘要翻译: 具有电阻尖端的半导体探针和制造半导体探针的方法。 掺杂有第一杂质的电阻尖端包括在其峰上形成的电阻区,并且轻掺杂具有与第一杂质极性相反的第二杂质,以及形成在其倾斜侧上并且重掺杂有第二杂质的第一和第二半导体区 。 半导体探针包括电阻尖端,悬臂具有设置有电阻尖端的端部,设置在悬臂上并覆盖电阻区域的电介质层,以及设置在电介质层上的金属屏蔽层, 位置对应于电阻区域。

    Two-axis actuator with large area stage
    60.
    发明申请
    Two-axis actuator with large area stage 失效
    具有大面积舞台的双轴执行器

    公开(公告)号:US20050040730A1

    公开(公告)日:2005-02-24

    申请号:US10922861

    申请日:2004-08-23

    IPC分类号: H02N1/06 H02N1/00 B60N2/02

    CPC分类号: H02N1/008

    摘要: Provided is a two-axis actuator having a large stage area. The two-axis actuator includes a stage moving in two directions and connected to an upper part of an inertial part. The two-axis actuator is configured to maximize a stage area relative to the overall area of the actuator, thereby increasing the data storage capacity of the stage.

    摘要翻译: 提供了具有大台阶面积的双轴致动器。 双轴致动器包括在两个方向上移动并连接到惯性部件的上部的台架。 双轴致动器被配置为使得相对于致动器的总体区域最大化舞台区域,从而增加舞台的数据存储容量。