公开(公告)号：US06594334B1

公开(公告)日：2003-07-15

申请号：US09697638

申请日：2000-10-27

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G21K500

CPC分类号： G03F7/70066 ,  G03F7/70233 ,  G03F7/7025 ,  G03F7/70575 ,  G03F7/707 ,  G03F7/70708 ,  G03F7/70916 ,  G03F7/70983

摘要： Laser light emitted from a high output laser light source is condensed by a condenser lens to form a condensed point. Xenon (Xe) gas or the like as a target is injected from a nozzle to the condensed point to generate Extreme Ultra Violate (EUV) light, and then the generated EUV light is condensed by a condenser mirror. A transmission filter having a predetermined transmittance with respect to the EUV light is disposed between the condenser mirror and a reflecting mirror, and scattering particles mixed in the EUV light are adsorbed by the transmission filter. The EUV light passing through the transmission filter is deviated by the reflecting mirror, a illuminance distribution of the EUV light is uniformalized by fly eye mirrors, thereafter the EUV light is condensed by another condenser mirror, and then exposure is effected using the condensed EUV light as an exposure beam.

摘要翻译： 从高输出激光源发出的激光由聚光透镜凝结，形成凝聚点。 作为目标的氙（Xe）气体等从喷嘴喷射到凝聚点以产生极端超越（EUV）光，然后所产生的EUV光由聚光镜凝结。 在聚光镜和反射镜之间设置有相对于EUV光具有预定透射率的透射滤光片，并且在EUV光中混合的散射粒子被透射滤光片吸附。 通过透射滤光器的EUV光由反射镜偏离，EUV光的照度分布由飞眼镜均匀化，之后EUV光被另一个聚光镜冷凝，然后使用冷凝的EUV光进行曝光 作为曝光光束。

公开(公告)号：US06590634B1

公开(公告)日：2003-07-08

申请号：US09716405

申请日：2000-11-21

申请人： Kenji Nishi ,  Kazuya Ota

发明人： Kenji Nishi ,  Kazuya Ota

IPC分类号： G03B2742

CPC分类号： G03F7/70216 ,  G03F7/70358 ,  G03F7/70425 ,  G03F7/70716 ,  G03F7/70733 ,  G03F9/70 ,  G03F9/7003 ,  G03F9/7015 ,  G03F9/7026 ,  G03F9/7088

摘要： Two stages (WS1, WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PI). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage WS1 in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section (EPS) to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.

摘要翻译： 保持晶片的两个阶段（WS1，WS2）可以独立地在对准系统（24a）下的位置信息测量部分（PIS）和投影光学系统（PI）下的曝光部分（EPS）之间移动。 在阶段（WS1）上执行晶片交换和对准，在该阶段期间晶片（W2）暴露在平台（WS2）上。 获得晶片（WS1）的每个照射区域的位置作为相对于部分（PIS）中的台WS1上形成的参考标记的相对位置。 当将晶片（WS1）移动到要暴露的部分（EPS）时，相对位置信息可用于相对于曝光图案的对准。 因此，在移动台阶段不需要连续观察台位置。 曝光操作由两个晶片级（WS1）和（WS2）并行执行，以提高生产率。

公开(公告)号：US06406820B1

公开(公告)日：2002-06-18

申请号：US09655366

申请日：2000-09-05

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G03F900

CPC分类号： G03F7/70066 ,  G03F7/70233 ,  G03F7/7025 ,  G03F7/70358 ,  G03F7/70591 ,  G03F7/706 ,  G03F7/707 ,  G03F7/70708 ,  G03F7/70875 ,  G03F7/70891 ,  G03F9/7003 ,  G03F9/7026 ,  G03F9/7034 ,  Y10S430/143

摘要： When a mask is irradiated obliquely with light from a lighting system, the light reflected from the mask is projected onto a wafer through a projection optical system, and the pattern of the mask is transferred to the wafer. If the magnification of the projection optical system changes because of a vertical movement of the mask, a control unit detects the projection position of the mask pattern image on a stage by an aerial image sensor and also detects a mark on the aerial image sensor by a mark detector so as to determine the baseline of the mark detector. Thus, the positional shift of the projection position of the mask pattern image on the wafer due to the change in magnification is corrected to sufficiently restrict or prevent alignment inaccuracy associated with the change in magnification.

摘要翻译： 当用来自照明系统的光倾斜照射掩模时，通过投影光学系统将从掩模反射的光投射到晶片上，并且将掩模的图案转印到晶片。 如果投影光学系统的放大率由于掩模的垂直移动而改变，则控制单元通过空中图像传感器检测舞台上的掩模图案图像的投影位置，并且还通过一个 标记检测器，以便确定标记检测器的基线。 因此，校正由于放大率的变化引起的掩模图案图像在晶片上的投影位置的位置偏移，以充分地限制或防止与放大率的变化相关联的对准不准确性。

公开(公告)号：US06341007B1

公开(公告)日：2002-01-22

申请号：US09714943

申请日：2000-11-20

申请人： Kenji Nishi ,  Kazuya Ota

发明人： Kenji Nishi ,  Kazuya Ota

IPC分类号： G03B2742

CPC分类号： G03F7/70216 ,  G03F7/70358 ,  G03F7/70425 ,  G03F7/70716 ,  G03F7/70733 ,  G03F9/70 ,  G03F9/7003 ,  G03F9/7015 ,  G03F9/7026 ,  G03F9/7088

摘要： Two stages (WS1), (WS2) holding wafers can independently move between a positional information measuring section (PIS) under an alignment system (24a) and an exposing section (EPS) under a projection optical system (PL). The wafer exchange and alignment are performed on the stage (WS1), during which wafer (W2) is exposed on the stage (WS2). A position of each shot area of wafer (WS1) is obtained as a relative position with respect to a reference mark formed on the stage (WS1) in the section (PIS). Relative positional information can be used for the alignment with respect to an exposure pattern when the wafer (WS1) is moved to the section EPS to be exposed. Therefore, it is not necessary that a stage position is observed continuously in moving the stage. Exposure operations are performed in parallel by the two wafer stages (WS1) and (WS2) so as to improve the throughput.

摘要翻译： 保持晶片的两级（WS1），（WS2）可以在投影光学系统（PL）下方的位置信息测量部分（PIS）和对准系统（24a）之间的曝光部分（EPS）之间独立地移动。 在阶段（WS1）上执行晶片交换和对准，在该阶段期间晶片（W2）暴露在平台（WS2）上。 获得晶片（WS1）的每个照射区域的位置作为相对于形成在该部分（PIS）中的台面（WS1）上的参考标记的相对位置。 当晶片（WS1）移动到待暴露的部分EPS时，相对位置信息可用于相对于曝光图案的对准。 因此，在移动台阶段不需要连续观察台位置。 曝光操作由两个晶片级（WS1）和（WS2）并行执行，以提高生产率。

公开(公告)号：US06228544B1

公开(公告)日：2001-05-08

申请号：US09388607

申请日：1999-09-02

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G03F900

CPC分类号： G03F7/70875 ,  G03F7/707 ,  G03F7/7075

摘要： While a current photosensitive substrate is being exposed on a substrate stage, the next photosensitive substrate for exposure is loaded on a temperature-adjustment plate for a predetermined time to remove a quantity of heat corresponding to a heat accumulation on the substrate stage during exposure. A substrate transporting system carries and loads the next photosensitive substrate, which has been cooled by the temperature-adjustment plate, onto the substrate stage. A pattern image of a mask is exposed and transferred onto the next photosensitive substrate through a projection optical system.

摘要翻译： 在当前的感光基片暴露在基片台上时，下一个用于曝光的感光基片在温度调节板上加载预定的时间以除去在曝光期间与基片台上的热积聚相对应的热量。 基板传送系统将已经被温度调节板冷却的下一个感光基板载入并载载到基板台上。 通过投影光学系统将掩模的图案图像曝光并转印到下一个感光基板上。

公开(公告)号：US6061119A

公开(公告)日：2000-05-09

申请号：US59434

申请日：1998-04-14

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G03F7/20 ,  G03B27/42 ,  G03B27/68

CPC分类号： G03F7/706

摘要： The present invention aims to provide a method of measuring an image-forming error of a projection lens without being influenced by atmospheric temperature at the time of coordinate measurement, and various kinds of applied techniques employing this measuring method. In particular, the measuring method according to the present invention enables errors to be measured with a high accuracy, while taking account of the temperature-dependent extraction or contraction component of the substrate, which is used for measuring the image-forming error.

摘要翻译： 本发明的目的在于提供一种测量投影透镜的图像形成误差而不受坐标测量时的大气温度的影响的方法，以及采用该测量方法的各种应用技术。 特别地，根据本发明的测量方法能够高精度地测量误差，同时考虑到用于测量图像形成误差的基板的温度依赖性提取或收缩分量。

公开(公告)号：US6018384A

公开(公告)日：2000-01-25

申请号：US434987

申请日：1995-05-04

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G03F7/20 ,  G03F9/00 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54

CPC分类号： G03F9/70 ,  G03F7/70241 ,  G03F7/70358

摘要： A projection exposure system for printing the pattern formed on a reticle onto a wafer includes a reticle stage (5) and a wafer stage. A first reference plate (9) having a first reference pattern (MM1) formed thereon is mounted on the reticle stage (5), and a second reference plate (25) having a second reference pattern (WM1) formed thereon is mounted on the wafer stage. The first reference pattern (MM1) comprises two cross-marks (60a, 60b) spaced apart from each other in X-direction, and the second reference pattern (WM1) comprises two cross-marks (61a, 61b) spaced apart from each other in X-direction., Images of the cross-marks (61a, 61b) of the second reference pattern (WM1) are formed through a projection optical system (2) on the reticle stage (5) and superimposed with the cross-marks (60a, 60b) of the first reference pattern (MM1). A pair of observation optical systems (10, 11) spaced apart from each other in X-direction are used to observe the superimposed images of the corresponding cross-marks (60a and 61a, 60b and 61b), so as to determine the position shifts in X-direction between the corresponding superimposed images at two positions spaced from each other in X-direction. The determined position shifts are used to calculate the variation in projection magnification. The projection exposure system is capable of quick and high precision detection of the magnification of the projection optical system (2).

摘要翻译： 用于将形成在掩模版上的图案印刷到晶片上的投影曝光系统包括标线片台（5）和晶片台。 具有形成在其上的第一参考图案（MM1）的第一参考板（9）安装在标线片台（5）上，并且在其上形成有第二参考图案（WM1）的第二参考板（25）安装在晶片 阶段。 第一参考图案（MM1）包括在X方向上彼此间隔开的两个十字标记（60a，60b），并且第二参考图案（WM1）包括彼此间隔开的两个交叉标记（61a，61b） 通过投影光学系统（2）在标线片台（5）上形成第二基准图案（WM1）的交叉标记（61a，61b）的图像，并与十字标记 60a，60b）的第一参考图案（MM1）。 使用在X方向上彼此间隔开的一对观察光学系统（10,11）来观察相应交叉标记（60a和61a，60b和61b）的叠加图像，以便确定位置偏移 在X方向上在X方向上彼此间隔的两个位置处的对应叠加图像之间的X方向。 使用确定的位置偏移来计算投影放大率的变化。 投影曝光系统能够快速高精度地检测投影光学系统（2）的放大倍数。

公开(公告)号：US5942357A

公开(公告)日：1999-08-24

申请号：US863064

申请日：1997-05-23

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70333 ,  G03F9/70

摘要： Provided is a method of aligning a substrate pattern on a photosensitive surface of a substrate with an image of a mask pattern to be formed on the photosensitive surface by an exposing radiation flux through a projection optical system in a projection exposure apparatus, using an alignment sensor system detecting a positional relationship between the substrate pattern and the image. The method includes the steps of moving the photosensitive surface of the substrate to a plurality of first positions relative to a focal plane at which a focused image of the mask pattern is to be formed through the projection optical system, the plurality of first positions being disposed adjacent the focal plane in a first direction substantially normal to the focal plane, the photosensitive surface of the substrate being substantially parallel to the focal plane at each of the first positions; outputting calibration signals from the alignment sensor system at each of the first positions of the photosensitive surface of the substrate, the calibration signals indicating an offset amount to be used to calibrate the alignment sensor system at each of the first positions; detecting a position of the substrate pattern relative to the image of the mask pattern to be formed on the substrate using the alignment sensor system in accordance with the calibration signals; and aligning the substrate pattern with the image of the mask pattern to be formed in the focal plane in accordance with the detected position of the substrate pattern relative to the image of the mask pattern.

摘要翻译： 提供了一种通过使用对准传感器中的投影光学系统的曝光辐射通量将衬底的感光表面上的衬底图案与要在光敏表面上形成的掩模图案的图像对准的方法 系统检测基板图案和图像之间的位置关系。 该方法包括以下步骤：将基板的感光表面相对于通过投影光学系统形成掩模图案的聚焦图像的焦平面移动到多个第一位置，多个第一位置被布置 在基本上垂直于焦平面的第一方向上邻近焦平面，基板的感光表面在每个第一位置处基本平行于焦平面; 在基板的感光表面的每个第一位置处从对准传感器系统输出校准信号，校准信号指示用于在每个第一位置校准对准传感器系统的偏移量; 使用对准传感器系统根据校准信号，检测基板图案相对于要在基板上形成的图案的图像的位置; 并且根据基板图案的相对于掩模图案的图像的检测位置，将基板图案与要形成在焦平面中的掩模图案的图像对准。

公开(公告)号：US5914774A

公开(公告)日：1999-06-22

申请号：US572066

申请日：1995-12-14

申请人： Kazuya Ota

发明人： Kazuya Ota

IPC分类号： H01L21/027 ,  G03F7/20 ,  G03F9/00 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54

CPC分类号： G03F7/706 ,  G03F7/70666 ,  G03F9/70

摘要： In a projection exposure apparatus for projecting an image of a pattern on a reticle through a projection optical system onto a wafer, in order to quickly measure imaging characteristics of the projection optical system without actual exposure, an enlarging optical system consisting of an objective lens and a relay optical system, and an image pickup element are provided on a Z-stage on which the wafer is mounted. Illumination light illuminates an index pattern formed on the reticle to form an image thereof near a first lens in the objective lens through the projection optical system, the enlarging optical system enlarges the thus formed image of the index pattern to form an enlarged image thereof on a receiving surface of the image pickup element, the image pickup element converts it into a signal, and an image processing system processes the signal from the image pickup element, thereby measuring the imaging characteristics of the projection optical system, based on the processing results.

摘要翻译： 在用于通过投影光学系统将图案的图案投影到晶片上的投影曝光装置中，为了在不实际曝光的情况下快速测量投影光学系统的成像特性，可以使用由物镜和 中继光学系统和图像拾取元件设置在其上安装有晶片的Z级上。 照明光通过投影光学系统照射形成在掩模版上的折射率图案以在物镜中的第一透镜附近形成图像，放大光学系统放大如此形成的折射率图案的图像，以在其上形成放大图像 图像拾取元件将其转换为信号，并且图像处理系统处理来自图像拾取元件的信号，从而基于处理结果测量投影光学系统的成像特性。

公开(公告)号：US5568257A

公开(公告)日：1996-10-22

申请号：US441062

申请日：1995-05-15

申请人： Kazuya Ota ,  Hideo Mizutani ,  Kouichiro Komatsu

发明人： Kazuya Ota ,  Hideo Mizutani ,  Kouichiro Komatsu

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  G01B9/02 ,  G01B11/00

CPC分类号： G03F9/70

摘要： The structure of an alignment apparatus is as follows: The illuminating areas of the two laser beams for the use of alignment, which are irradiated onto a diffraction grating on a substrate and a diffraction grating mark on a fiducial member, are relatively driven by a field diaphragm and a diaphragm member. A photoelectric detector receives the interference light generated from a first portion in the area on the above-mentioned diffraction mark where the two laser beams intersect following the above-mentioned relative driving, and receives the interference light generated from a second portion in the aforesaid area. A main control system calculates the intersecting angles or rotational error of the two laser beams on the basis of the phase difference of the detection signals from the aforesaid photoelectric detector. The intersecting angles or rotational error is corrected by allowing the parallel flat glasses, which are arranged on the light path, to be slanted.

摘要翻译： 对准装置的结构如下：照射到基板上的衍射光栅上的两个用于对准的激光束的照明区域和基准部件上的衍射光栅标记相对地被场地驱动 隔膜和隔膜构件。 光电检测器接收由上述相关驱动之后两个激光束相交的上述衍射标记上的区域中的第一部分产生的干涉光，并接收由上述区域中的第二部分产生的干涉光 。 主控制系统根据来自上述光电检测器的检测信号的相位差来计算两个激光束的相交角或旋转误差。 通过使布置在光路上的平行平板眼镜倾斜来校正交叉角度或旋转误差。