公开(公告)号：US06326648B1

公开(公告)日：2001-12-04

申请号：US09467357

申请日：1999-12-20

申请人： Jean Jalade ,  Jean-Louis Sanchez ,  Jean-Pierre Laur ,  Marie Breil ,  Patrick Austin ,  Eric Bernier ,  Mathieu Roy

发明人： Jean Jalade ,  Jean-Louis Sanchez ,  Jean-Pierre Laur ,  Marie Breil ,  Patrick Austin ,  Eric Bernier ,  Mathieu Roy

IPC分类号： H01L2974

CPC分类号： H01L29/7416 ,  H01L27/0623 ,  H01L29/7428 ,  H01L29/749

摘要： A monolithic power switch with a controlled di/dt including the parallel assembly of a MOS or IGBT type component with a thyristor type component, including means for inhibiting the thyristor type component during the closing phase of the switch, which is ensured by the IGBT type component. The IGBT type component has a vertical multicell structure and the component of thyristor type has a vertical monocell structure.

摘要翻译： 具有受控di / dt的单片电源开关，包括具有晶闸管型部件的MOS或IGBT型部件的并联组件，包括用于在开关闭合期间抑制晶闸管型部件的装置，其由IGBT型 零件。 IGBT型元件具有垂直多单元结构，晶闸管型元件具有垂直单元结构。

公开(公告)号：US5828089A

公开(公告)日：1998-10-27

申请号：US641676

申请日：1996-05-01

申请人： Eric Bernier

发明人： Eric Bernier

IPC分类号： H01L29/74 ,  H01L27/02 ,  H01L29/747 ,  H02H9/04 ,  H04Q3/42 ,  H01L23/62 ,  H01L31/111

CPC分类号： H01L27/0248

摘要： A monolithic component for protecting a subscriber line interface circuit includes, in an N-type substrate, whose bottom surface is coated with a first uniform metallization, first and second portions separated by a P-type isolation wall. The first portion includes two vertical diodes having a common cathode corresponding to the bottom surface of the substrate, two vertical transistors having a common collector and a common base, the collectors corresponding to the bottom surface of the substrate. The second portion includes two sets each including a pair of head-to-tail parallel-connected vertical thyristors and a pair of head-to-tail parallel-connected vertical zener diodes for controlling the conduction of these thyristors.

摘要翻译： 用于保护用户线路接口电路的单片部件包括在其底表面被第一均匀金属化的N型衬底中，第一和第二部分被P型隔离壁隔开。 第一部分包括具有对应于衬底的底表面的公共阴极的两个垂直二极管，具有公共集电极和公共基底的两个垂直晶体管，所述集电极对应于衬底的底表面。 第二部分包括两组，每组包括一对头 - 尾并行连接的垂直晶闸管和一对头对称并联连接的垂直齐纳二极管，用于控制这些晶闸管的导通。

公开(公告)号：US5808326A

公开(公告)日：1998-09-15

申请号：US843732

申请日：1997-04-21

申请人： Eric Bernier ,  Christian Ballon

发明人： Eric Bernier ,  Christian Ballon

IPC分类号： H01L29/866 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/08 ,  H02H3/22 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L27/0248 ,  H01L27/0814

摘要： A protection semiconductor component includes at least two pairs of main Shockley diodes, each pair including two parallel diodes, head-to-tail connected between a front surface metallization and a rear surface metallization, the rear surface metallization being common to the two pairs of diodes. Each of the main diodes whose blocking junction corresponds to a distinct well on the side of the front surface is associated with at least one auxiliary Shockley diode having the same polarity and a lower triggering threshold, the triggering of one auxiliary diode thus causing the triggering of the other auxiliary diode and of the associated main Shockley diodes.

摘要翻译： 保护半导体部件包括至少两对主Shockley二极管，每对包括两个并联二极管，前后连接在前表面金属化和后表面金属化之间，后表面金属化是两对二极管共同的 。 阻挡连接对应于前表面一侧的不同阱的每个主二极管与至少一个具有相同极性和较低触发阈值的辅助Shockley二极管相关联，因此触发一个辅助二极管，从而导致触发 另一个辅助二极管和相关的主Shockley二极管。

公开(公告)号：US5739555A

公开(公告)日：1998-04-14

申请号：US286492

申请日：1994-08-04

申请人： Eric Bernier ,  Denis Berthiot

发明人： Eric Bernier ,  Denis Berthiot

IPC分类号： H01L29/74 ,  H01L29/744 ,  H05B41/04 ,  H01L31/111

CPC分类号： H01L29/744 ,  H01L29/7428 ,  H05B41/046

摘要： An amplifying-gate thyristor having an increased integrated circuit includes a main thyristor and an amplifying thyristor. The amplifying thyristor is of the gate turnoff-type. The main tbyristor and the amplifying thyristor are such that the amplifying thyristor remains in the conductive state while the main thyristor is conductive. A control circuit turns off the amplifying thyristor when the current through the main thyristor is approximately its hold current.

摘要翻译： 具有增加的集成电路的放大栅极晶闸管包括主晶闸管和放大晶闸管。 放大晶闸管是栅极截止型。 主晶闸管和放大晶闸管使得放大晶闸管保持导通状态，而主晶闸管导通。 当通过主晶闸管的电流约为其保持电流时，控制电路关断放大晶闸管。

公开(公告)号：US5684322A

公开(公告)日：1997-11-04

申请号：US641410

申请日：1996-05-01

申请人： Eric Bernier

发明人： Eric Bernier

IPC分类号： H01L27/06 ,  H01L27/02 ,  H02H9/04 ,  H04Q3/42 ,  H01L23/62

CPC分类号： H01L27/0248

摘要： A high-speed monolithic protection semiconductor component implements two NPN transistors and two diodes. The cathodes of the diodes and the collectors of the transistors are connected to a common terminal. The anode of a diode is connected to the emitter of a transistor. The component includes a low-doped N-type semiconductor substrate whose bottom surface has a highly doped layer coated with a first metallization, first and second highly doped P-type regions, a low-doped P-type well in which are formed N-type third and fourth regions and a P-type fifth region. A second metallization connects the first and third regions. A third metallization connects the second and fourth regions. A fourth metallization is integral with the fifth region.

摘要翻译： 高速单片保护半导体元件实现两个NPN晶体管和两个二极管。 二极管的阴极和晶体管的集电极连接到公共端子。 二极管的阳极连接到晶体管的发射极。 该组件包括低掺杂N型半导体衬底，其底表面具有涂覆有第一金属化，第一和第二高掺杂P型区的高掺杂层，低掺杂P型阱，其中形成N- 类型第三和第四区域和P型第五区域。 第二金属化连接第一和第三区域。 第三金属化连接第二和第四区域。 第四个金属化与第五个区域是一体的。