公开(公告)号：US06469197B1

公开(公告)日：2002-10-22

申请号：US09668275

申请日：2000-09-25

申请人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

发明人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

IPC分类号： C07C6474

CPC分类号： G03F7/038 ,  G03F7/0045 ,  Y10S430/111

摘要： It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained. Since the polymer has not a benzene ring, unlike a base polymer of a conventional negative resist, the polymer has high transparency to ArF excimer laser beam and also has high etching resistance because of its bridged alicyclic group.

摘要翻译： 本发明的目的是提供一种用于光刻的负性光致抗蚀剂组合物，其使用诸如ArF准分子激光束的短波长光作为光源。本发明的负型光致抗蚀剂组合物是包含至少一种 具有由通式（1）表示的单元的交联剂和光酸产生剂的聚合物，并且所述交联剂能够在酸催化剂存在下使聚合物交联，由此聚合物​​在显影剂中不溶化。 由于本发明的负光刻胶组合物通过在曝光部分由光酸产生剂产生的酸的作用而在显影剂中不溶解，因此可以获得负图案。 由于聚合物不具有苯环，与常规的负性抗蚀剂的基础聚合物不同，聚合物对ArF准分子激光束具有高透明度，并且由于其桥连的脂环族基团也具有高耐蚀刻性。

公开(公告)号：US6030747A

公开(公告)日：2000-02-29

申请号：US124673

申请日：1998-07-29

申请人： Kaichiro Nakano ,  Katsumi Maeda ,  Shigeyuki Iwasa ,  Etsuo Hasegawa

发明人： Kaichiro Nakano ,  Katsumi Maeda ,  Shigeyuki Iwasa ,  Etsuo Hasegawa

IPC分类号： G03F7/004 ,  G03F7/038

CPC分类号： G03F7/038 ,  G03F7/0045 ,  Y10S430/111

摘要： Monomers expressed by the following general formula are polymerized so as to obtain a polymer, and the polymer and a photoacid generator are dissolved in a solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R.sup.3 represents a hydrogen atom, a methyl group or an acetyl group.

摘要翻译： 聚合由以下通式表示的单体以获得聚合物，并将聚合物和光致酸产生剂溶解在溶剂中以形成对ArF准分子激光的透明度和灵敏度都大的改进的化学增幅抗蚀剂层，并且改进 在决议。 其中R 1表示氢原子或甲基，R 2表示碳原子数为7〜22的桥连烃基，m为0或1，n为0或1，R 3为氢原子，甲基或乙酰基 组。

公开(公告)号：US5985522A

公开(公告)日：1999-11-16

申请号：US947100

申请日：1997-10-08

申请人： Shigeyuki Iwasa ,  Kaichiro Nakano ,  Katsumi Maeda ,  Takeshi Ohfuji ,  Etsuo Hasegawa

发明人： Shigeyuki Iwasa ,  Kaichiro Nakano ,  Katsumi Maeda ,  Takeshi Ohfuji ,  Etsuo Hasegawa

IPC分类号： C07C62/38 ,  C07C69/73 ,  C08F20/26 ,  C08F20/28 ,  C09D133/04 ,  C09D133/14 ,  G03F7/004 ,  G03F7/029 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027 ,  G03C5/00

CPC分类号： C08F20/28 ,  G03F7/0045 ,  G03F7/039

摘要： There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.

摘要翻译： 提供一种光致抗蚀剂，其包含（a）在其结构单元内由具有由以下通式[1]表示的化合物的聚合物构成的树脂，和（b）光酸产生剂。 其中，R1表示氢原子，R2表示碳原子数为7〜13的碳原子数为2〜20的碳原子数为2〜20的二价烃基，碳原子数为1〜2的烃基， R5表示（a）碳数为1〜12的烃基，（b）碳数为1〜12的烃基，碳原子数为1〜12的烷氧基取代的烃基， （c）碳原子数为1〜12的烃基，碳原子数为1〜13的酰基取代。上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此，光致抗蚀剂使得可以形成没有抗蚀剂残留物的精细图案，并且具有优异的热稳定性。

公开(公告)号：US5770346A

公开(公告)日：1998-06-23

申请号：US763055

申请日：1996-12-10

申请人： Shigeyuki Iwasa ,  Kaichiro Nakano ,  Katsumi Maeda ,  Takeshi Ohfuji ,  Etsuo Hasegawa

发明人： Shigeyuki Iwasa ,  Kaichiro Nakano ,  Katsumi Maeda ,  Takeshi Ohfuji ,  Etsuo Hasegawa

IPC分类号： C07C62/38 ,  C07C69/73 ,  C08F20/26 ,  C08F20/28 ,  C09D133/04 ,  C09D133/14 ,  G03F7/004 ,  G03F7/029 ,  G03F7/033 ,  G03F7/039 ,  H01L21/027

CPC分类号： C08F20/28 ,  G03F7/0045 ,  G03F7/039

摘要： There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula �1! within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction. Thus, the photoresist makes it possible to form a fine pattern without resist residue, and has superior thermal stability.

摘要翻译： 提供一种光致抗蚀剂，其包含（a）在其结构单元内由具有由以下通式[1]表示的化合物的聚合物构成的树脂，和（b）光酸产生剂。 其中，R1表示氢原子，R2表示碳原子数为7〜13的碳原子数为2的烃基，R3表示碳原子数为4的碳原子数为4的烃基， 数1或2，R5代表（a）碳数为1至12的烃基，（b）碳数为1至12的烃基，并被碳数为烷氧基取代 为1〜12，（c）碳数为1〜12的烃基，碳原子数为1〜13的酰基所取代。上述光致抗蚀剂通过副反应不产生额外的聚合物。 因此，光致抗蚀剂使得可以形成没有抗蚀剂残留物的精细图案，并且具有优异的热稳定性。

公开(公告)号：US5763142A

公开(公告)日：1998-06-09

申请号：US807180

申请日：1997-02-27

申请人： Shigeyuki Iwasa

发明人： Shigeyuki Iwasa

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/16 ,  H01L21/027 ,  G03C5/00

CPC分类号： G03F7/091 ,  G03F7/16 ,  H01L21/0273 ,  G03F7/0045

摘要： Disclosed is a method for forming a resist pattern in which a chemically amplified resist which has a photosensitive acid-generating agent with a catalytic function is used, has the step of: treating the surface of nitrided metal film or nitrided semimetal film deposited on a substrate by using a substance that reduces the basicity of a basic substance which exists on the surface of nitrided metal film or nitrided semimetal film or which is chemically coupled with the nitrided metal film or nitrided semimetal film.

摘要翻译： 公开了一种形成抗蚀剂图案的方法，其中使用具有催化功能的感光性酸产生剂的化学放大抗蚀剂，具有以下步骤：处理沉积在基材上的氮化金属膜或氮化半金属膜的表面 通过使用减少存在于氮化金属膜或氮化半金属膜的表面上或与氮化金属膜或氮化半金属膜化学偶联的碱性物质的碱度的物质。

公开(公告)号：US08802798B2

公开(公告)日：2014-08-12

申请号：US12230485

申请日：2008-08-29

申请人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

发明人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

IPC分类号： C08F24/00 ,  C08F10/00 ,  C08F32/08 ,  C08F118/02 ,  C08F2/00

CPC分类号： C08F222/14 ,  C07D307/93 ,  C08F20/28 ,  C08F120/28 ,  C08F220/32 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/111

摘要： A photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group or one of a specified subset of alicyclic hydrocarbon groups, alicyclic hydrocarbon groups, or hydrocarbon groups; R6 is a hydrogen atom or one of a specified subset of hydrocarbon groups or alicyclic hydrocarbon groups; x, y and z are optional values which meet x+y+z=1, 0

摘要翻译： 一种用于光刻的光致抗蚀剂材料，其使用220nm以下的光，其至少包含由下式（2）表示的聚合物和通过曝光产生酸的光酸发生剂：其中R1，R2，R3和R5各自 氢原子或甲基; R4是酸不稳定基团或脂环族烃基，脂环族烃基或烃基的特定子集之一; R6是氢原子或烃基或脂环烃基的特定子集之一; x，y和z是满足x + y + z = 1,0,0

公开(公告)号：US20110196122A1

公开(公告)日：2011-08-11

申请号：US13088311

申请日：2011-04-15

申请人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

发明人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

IPC分类号： C08F222/14

CPC分类号： C08F222/14 ,  C07D307/93 ,  C08F20/28 ,  C08F120/28 ,  C08F220/32 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/111

摘要： There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0

摘要翻译： 这里公开了使用220nm以下的光的光刻胶材料，该光致抗蚀剂材料至少包含由下式（2）表示的聚合物和通过曝光产生酸的光酸发生剂：其中R1，R2，R3 和R 5各自为氢原子或甲基; R4是酸不稳定基团，具有7〜13个碳原子的脂环族烃基，其具有酸不稳定基团，具有7〜13个碳原子的脂环族烃基，其具有羧基或具有3〜 13个碳原子，其具有环氧基; R6为氢原子，碳原子数1〜12的烃基或碳原子数为7〜13的脂环族烃基，具有羧基; x，y和z是满足x + y + z = 1,0,0

公开(公告)号：US07432035B2

公开(公告)日：2008-10-07

申请号：US11713791

申请日：2007-03-05

申请人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

发明人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

IPC分类号： G03F7/00 ,  G03F7/004

CPC分类号： C08F222/14 ,  C07D307/93 ,  C08F20/28 ,  C08F120/28 ,  C08F220/32 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/111

摘要： There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0

摘要翻译： 这里公开了使用220nm以下的光进行光刻的光致抗蚀剂材料，其包含至少由下式（2）表示的聚合物和通过曝光产生酸的光酸发生剂：其中R 1 R 2，R 3，R 5和R 5各自为氢原子或甲基; R 4是酸不稳定基团，具有7-13个碳原子的脂环族烃基，其具有酸不稳定基团，具有7至13个碳原子的脂环族烃基，其具有羧基 ，或具有3〜13个碳原子的烃基，具有环氧基; R 6是氢原子，具有1〜12个碳原子的烃基或具有7〜13个碳原子的脂环族烃基，其具有羧基; x，y和z是满足x + y + z = 1,0,0 是氢原子或甲基，R 9是具有脂环族内酯结构的7-16个碳原子的烃基。

公开(公告)号：US07318981B2

公开(公告)日：2008-01-15

申请号：US10519933

申请日：2004-03-01

申请人： Shigeyuki Iwasa ,  Hiroyuki Nishide

发明人： Shigeyuki Iwasa ,  Hiroyuki Nishide

IPC分类号： H01M4/60

CPC分类号： H01M4/60 ,  H01M4/137 ,  H01M4/602 ,  H01M10/052 ,  H01M2004/028

摘要： A secondary battery, that has an excellent charge and discharge cycle characteristics, with a larger capacity, is provided. The secondary battery having a positive electrode, negative electrode and electrolyte, includes a polymer having a repeating unit represented by a formula (1) as an active material of at least one of positive electrode and negative electrode. According to formula (1), R1, R2, R3 and R4 each independently represents hydrogen atom, substituted or unsubstituted alkyl group, substituted or unsubstituted aromatic hydrocarbons, substituted or unsubstituted hetroaromatic groups, halogen atom, or alkylene group that may be coupled to the ring form either one or both of R1 and R3, R2 and R4.

摘要翻译： 提供具有较大容量的具有优异的充放电循环特性的二次电池。 具有正极，负极和电解质的二次电池包括具有由式（1）表示的重复单元作为正极和负极中的至少一种的活性材料的聚合物。 根据式（1），R 1，R 2，R 3和R 4各自独立地表示氢原子，取代或未取代的烷基，取代或未取代的芳族烃，取代或未取代的杂芳族基团，卤素原子或可与 环形成R 1和R 3，R 2和R 4中的一个或两个。

公开(公告)号：US20070218403A1

公开(公告)日：2007-09-20

申请号：US11713791

申请日：2007-03-05

申请人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

发明人： Katsumi Maeda ,  Shigeyuki Iwasa ,  Kaichiro Nakano ,  Etsuo Hasegawa

IPC分类号： G03C1/73 ,  C08F118/02

CPC分类号： C08F222/14 ,  C07D307/93 ,  C08F20/28 ,  C08F120/28 ,  C08F220/32 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  Y10S430/111

摘要： There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: wherein R1, R2, R3 and R5 are each a hydrogen atom or a methyl group; R4 is an acid-labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has an acid labile group, an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group, or a hydrocarbon group having 3 to 13 carbon atoms, which has an epoxy group; R6 is a hydrogen atom, a hydrocarbon group having 1 to 12 carbon atoms, or an alicyclic hydrocarbon group having 7 to 13 carbon atoms, which has a carboxyl group; x, y and z are optional values which meet x+y+z=1, 0

摘要翻译： 这里公开了使用220nm以下的光进行光刻的光致抗蚀剂材料，其包含至少由下式（2）表示的聚合物和通过曝光产生酸的光酸发生剂：其中R 1 R 2，R 3，R 5和R 5各自为氢原子或甲基; R 4是酸不稳定基团，具有7-13个碳原子的脂环族烃基，其具有酸不稳定基团，具有7至13个碳原子的脂环族烃基，其具有羧基 ，或具有3〜13个碳原子的烃基，具有环氧基; R 6是氢原子，具有1〜12个碳原子的烃基或具有7〜13个碳原子的脂环族烃基，其具有羧基; x，y和z是满足x + y + z = 1,0,0 是氢原子或甲基，R 9是具有脂环族内酯结构的7-16个碳原子的烃基。