公开(公告)号：US20080066105A1

公开(公告)日：2008-03-13

申请号：US11730452

申请日：2007-04-02

申请人： Moon-soo Kim ,  Eun-kyung Kang ,  Do-young Kim

发明人： Moon-soo Kim ,  Eun-kyung Kang ,  Do-young Kim

IPC分类号： H04N5/445 ,  G06F17/30

CPC分类号： H04N21/8173 ,  G06F16/90 ,  H04N21/435 ,  H04N21/8166

摘要： A method for automatically searching for data applications for all channels and an video apparatus adopting the method are provided. The method for automatically searching for data applications for all channels includes receiving data application information through at least one of a current channel, which is currently selected, and other channels, and generating a data application list based on the data application information. Accordingly, users can easily know the data applications received through all channels without searching through all channels and can use data applications more conveniently.

摘要翻译： 提供了一种用于自动搜索所有通道的数据应用的方法和采用该方法的视频设备。 用于自动搜索所有信道的数据应用的方法包括通过当前选择的当前信道和其他信道中的至少一个接收数据应用信息，并且基于数据应用信息生成数据应用列表。 因此，用户可以容易地知道通过所有通道接收到的数据应用程序，而无需通过所有通道进行搜索，并且可以更方便地使用数据应用程序。

公开(公告)号：US07233022B2

公开(公告)日：2007-06-19

申请号：US10980838

申请日：2004-11-04

申请人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

发明人： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC分类号： H01L29/10

CPC分类号： H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

摘要： In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

摘要翻译： 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20050263774A1

公开(公告)日：2005-12-01

申请号：US11136536

申请日：2005-05-25

申请人： Do-young Kim ,  Takashi Noguchi ,  Hans Cho ,  Jang-yeon Kwon

发明人： Do-young Kim ,  Takashi Noguchi ,  Hans Cho ,  Jang-yeon Kwon

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L21/84 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： Provided are a high quality poly-Si structure and a method of fabricating the same. The poly-Si structure includes a substrate, a polycrystallized silicon thin film, and an adhesive layer disposed between them. In the method of fabricating the poly-Si structure, an adhesive layer is first formed on a substrate, a-Si is deposited at a low temperature, and a polycrystallization process of silicon is, then performed by high density energy. Polycrystallization by high energy is possible, and therefore, high quality poly-Si can be achieved. The method can be employed in a low-temperature process, and a heat-sensitive material such as plastic or the like can be used as a substrate.

摘要翻译： 提供了高质量的多晶硅结构及其制造方法。 多晶硅结构包括基板，多晶硅薄膜和设置在它们之间的粘合层。 在制造多晶硅结构的方法中，首先在基板上形成粘合剂层，在低温下沉积a-Si，然后通过高密度能量进行硅的多晶化工​​艺。 通过高能量进行多晶化是可能的，因此可以实现高质量的多晶硅。 该方法可以在低温工艺中使用，并且可以使用诸如塑料等的热敏材料作为基材。

公开(公告)号：US20050145843A1

公开(公告)日：2005-07-07

申请号：US11013398

申请日：2004-12-17

申请人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

发明人： Huaxiang Yin ,  Takashi Noguchi ,  Wenxu Xianyu ,  Do-young Kim

IPC分类号： H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L29/04 ,  H01L21/00

CPC分类号： H01L29/785 ,  H01L29/42384 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/7855

摘要： A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a substrate; a buffer layer formed on the substrate; a source and a drain spaced apart from each other on the buffer layer; a channel layer formed on the buffer layer to connect the source and the drain with each other; and a gate formed on the buffer layer to be spaced apart from the source, the drain and the channel layer.

摘要翻译： 提供薄膜晶体管及其制造方法。 薄膜晶体管包括基板; 形成在所述基板上的缓冲层; 在缓冲层上彼此间隔开的源极和漏极; 形成在所述缓冲层上的沟道层，以将所述源极和所述漏极彼此连接; 以及形成在缓冲层上以与源极，漏极和沟道层间隔开的栅极。