MANUFACTURING THIN FILMS WITH CHALCOGEN SPECIES WITH INDEPENDENT CONTROL OVER DOPING AND BANDGAPS
    51.
    发明申请
    MANUFACTURING THIN FILMS WITH CHALCOGEN SPECIES WITH INDEPENDENT CONTROL OVER DOPING AND BANDGAPS 审中-公开
    制造薄膜与混合物种,具有独特的控制,通过掺杂和胶带

    公开(公告)号:US20120318361A1

    公开(公告)日:2012-12-20

    申请号:US13528096

    申请日:2012-06-20

    IPC分类号: H01L31/0296 H01L31/18

    摘要: A method for synthesizing a thin film of CZTS such as for use as an absorber in a photovoltaic device. The method includes providing a substrate in a chamber, and, then, depositing a film of CZTS material on the substrate, the CZTS material comprising copper, zinc, tin, and at least on chalcogen species. The depositing includes tuning an optical bandgap of the film with heterovalent alloying. The depositing is performed at low temperatures with the substrate provided in the chamber free of direct/active heating. For example, the substrate may be maintained at a temperature below about 150° C. during the depositing of the film. The heterovalent alloying involves controlling deposition rates for the copper and the zinc to define a copper to zinc ratio set the optical bandgap such as a value between about 1.0 eV and about 2.75 eV.

    摘要翻译: 一种用于合成CZTS薄膜的方法,例如用作光伏器件中的吸收体。 该方法包括在室中提供衬底,然后在衬底上沉积CZTS材料的膜,CZTS材料包含铜,锌,锡以及至少在硫属元素上。 沉积包括用异质合金化调谐膜的光学带隙。 沉积在低温下进行,而设置在腔室中的衬底没有直接/主动加热。 例如,在沉积薄膜期间,可将基底保持在低于约150℃的温度。 异价合金化包括控制铜和锌的沉积速率以限定铜与锌的比例,将光学带隙设定为约1.0eV至约2.75eV之间的值。

    Bar stool
    53.
    外观设计

    公开(公告)号:USD668464S1

    公开(公告)日:2012-10-09

    申请号:US29408317

    申请日:2011-12-09

    申请人: Hui Du

    设计人: Hui Du

    Bar chair
    55.
    外观设计

    公开(公告)号:USD638633S1

    公开(公告)日:2011-05-31

    申请号:US29366505

    申请日:2010-07-26

    申请人: Hui Du

    设计人: Hui Du