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公开(公告)号：US20110108898A1
公开(公告)日：2011-05-12
申请号：US12851072
申请日：2010-08-05
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US07812383B2
公开(公告)日：2010-10-12
申请号：US11846040
申请日：2007-08-28
IPC分类号： H01L43/08
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/66984
摘要： A spin memory includes a magneto-resistance element having a first ferromagnetic layer in which a magnetization direction is pinned, a second ferromagnetic layer in which a magnetization direction changes, and a first nonmagnetic layer between the first and second ferromagnetic layers, a lower electrode and an upper electrode extending in a direction between 45 degrees and 90 degrees relative to an axis of hard magnetization of the second ferromagnetic layer, and sandwiching the magneto-resistance element at one end in a longitudinal direction, a switching element connected to another end in a longitudinal direction of the lower electrode, and a bit line connected to another end in a longitudinal direction of the upper electrode, wherein writing is carried out by supplying spin-polarized electrons to the second ferromagnetic layer and applying a magnetic field from the lower electrode and the upper electrode to the second ferromagnetic layer.
摘要翻译： 自旋存储器包括磁阻元件，其具有其中磁化方向被钉扎的第一铁磁层，磁化方向改变的第二铁磁层和第一和第二铁磁层之间的第一非磁性层，下电极和 相对于第二铁磁层的硬磁化轴在45度和90度之间的方向延伸的上电极，并且在纵向方向的一端夹着磁阻元件，开关元件连接到另一端 下电极的纵向方向和与上电极的纵向方向上的另一端连接的位线，其中通过向第二铁磁层提供自旋极化电子并从下电极施加磁场来进行写入，以及 上电极到第二铁磁层。
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公开(公告)号：US07649767B2
公开(公告)日：2010-01-19
申请号：US12132664
申请日：2008-06-04
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译： 本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻 元件，写入期间磁阻元件的硬磁化方向的磁场。
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公开(公告)号：US20080247223A1
公开(公告)日：2008-10-09
申请号：US12132664
申请日：2008-06-04
IPC分类号： G11C11/00
CPC分类号： G11C11/16
摘要： A spin-injection magnetic random access memory of an aspect of the present invention includes a magnetoresistive element, a unit which writes data into the magnetoresistive element by use of spin-polarized electrons generated by a spin-injection current and which applies, to the magnetoresistive element, a magnetic field of a direction of a hard magnetization of the magnetoresistive element during the writing.
摘要翻译： 本发明的一个自旋注入磁随机存取存储器包括一个磁阻元件，一个通过使用由自旋注入电流产生的自旋极化电子将数据写入磁阻元件的单元，该单元适用于磁阻 元件，写入期间磁阻元件的硬磁化方向的磁场。
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公开(公告)号：US20080061332A1
公开(公告)日：2008-03-13
申请号：US11771295
申请日：2007-06-29
IPC分类号： H01L29/94
CPC分类号： H01L29/66984 , B82Y25/00 , H01F10/1936 , H01F10/3254 , H01F10/3272
摘要： A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first ferromagnetic layer being pinned; a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization pinned layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being changeable and a magnetization direction of the magnetization pinned layer being fixed; a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic film; and a gate electrode formed on the gate insulating film.
摘要翻译： 自旋MOSFET包括：半导体衬底; 形成在所述半导体衬底上并包括第一铁磁层的第一磁性膜，所述第一铁磁层的磁化方向被钉扎; 形成在所述半导体基板上以与所述第一磁性膜分离并且包括无磁化层的第二磁性膜，作为隧道绝缘体的第一非磁性层并且设置在所述磁化自由层上，以及设置在所述第一非磁性层上的磁化固定层 磁化自由层的磁化方向是可变的，并且磁化固定层的磁化方向是固定的; 在所述第一磁性膜和所述第二磁性膜之间至少设置在所述半导体基板上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。
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公开(公告)号：US07266012B2
公开(公告)日：2007-09-04
申请号：US11373305
申请日：2006-03-13
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L27/228 , H01L43/08
摘要： It is made possible to provide a highly reliable magnetoresistive effect element and magnetic memory that operate with low power consumption and low current writing. The magnetoresistive effect element includes: a magnetization free layer including at least two magnetic layers subject to antiferromagnetic coupling and a non-magnetic layer provided between the magnetic layers; a tunnel barrier layer provided on one surface of the magnetization free layer; a first magnetization pinned layer provided on an opposite surface of the tunnel barrier layer from the magnetization free layer; a non-magnetic metal layer provided on an opposite surface of the magnetization free layer from the tunnel barrier layer; and a second magnetization pinned layer provided on an opposite surface of the non-magnetic metal layer from the magnetization free layer. The first and second magnetization pinned layers are substantially the same in magnetization direction. The non-magnetic metal layer includes Cu, Ag, Au, or an alloy of them. The non-magnetic layer in the magnetization free layer includes Ru, Rh, Ir or an alloy of them.
摘要翻译： 可以提供高可靠性的磁阻效应元件和磁存储器，其以低功耗和低电流写入操作。 磁阻效应元件包括：包含至少两个受到反铁磁耦合的磁性层的磁化自由层和设置在磁性层之间的非磁性层; 设置在所述磁化自由层的一个表面上的隧道势垒层; 第一磁化固定层，设置在所述隧道势垒层与所述磁化自由层的相对表面上; 设置在所述磁化自由层的与所述隧道势垒层相反的表面上的非磁性金属层; 以及设置在所述非磁性金属层与所述无磁化层的相对表面上的第二磁化固定层。 第一和第二磁化固定层在磁化方向上基本相同。 非磁性金属层包括Cu，Ag，Au或它们的合金。 磁化自由层中的非磁性层包括Ru，Rh，Ir或它们的合金。
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公开(公告)号：US07239541B2
公开(公告)日：2007-07-03
申请号：US11242906
申请日：2005-10-05
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/16 , H01L43/08
摘要： A spin-injection magnetic random access memory according to an embodiment of the invention includes a magnetoresistive element having a magnetic fixed layer whose magnetization direction is fixed, a magnetic recording layer whose magnetization direction can be changed by injecting spin-polarized electrons, and a tunnel barrier layer provided between the magnetic fixed layer and the magnetic recording layer, a bit line which passes spin-injection current through the magnetoresistive element, the spin-injection current being used for generation of the spin-polarized electrons, a writing word line through which assist current is passed, the assist current being used for the generation of an assist magnetic field in a magnetization easy-axis direction of the magnetoresistive element, and a driver/sinker which determines a direction of the spin-injection current and a direction of the assist current.
摘要翻译： 根据本发明实施例的自旋注入磁随机存取存储器包括具有磁化方向固定的磁固定层的磁阻元件，其磁化方向可以通过注入自旋极化电子而改变的磁记录层，以及隧道 设置在磁性固定层和磁记录层之间的阻挡层，使自旋注入电流通过磁阻元件的位线，用于产生自旋极化电子的自旋注入电流，写入字线， 辅助电流通过，辅助电流用于在磁阻元件的易磁化易磁化方向上产生辅助磁场，以及确定自旋注入电流的方向和驱动器/ 协助电流
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公开(公告)号：US07977719B2
公开(公告)日：2011-07-12
申请号：US12637009
申请日：2009-12-14
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US20100091556A1
公开(公告)日：2010-04-15
申请号：US12637009
申请日：2009-12-14
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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公开(公告)号：US07663171B2
公开(公告)日：2010-02-16
申请号：US11228326
申请日：2005-09-19
IPC分类号： H01L29/76
CPC分类号： H01F10/3231 , B82Y25/00 , G11C11/161 , G11C11/1675 , H01F10/3254 , H01F10/3272 , H01F10/3281 , H01L43/08 , H01L43/10
摘要： It is possible to reduce a current required for spin injection writing. A magneto-resistance effect element includes: a first magnetization pinned layer; a magnetization free layer; a tunnel barrier layer; a second magnetization pinned layer whose direction of magnetization is pinned to be substantially anti-parallel to the direction of magnetization of the first magnetization pinned layer, and; a non-magnetic layer. When the second magnetization pinned layer is made of ferromagnetic material including Co, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Rh, Ag, and Au; when the second magnetization pinned layer is made of ferromagnetic material including Fe, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Rh, Pt, Ir, Al, Ag, and Au; and when the second magnetization pinned layer is made of ferromagnetic material including Ni, material for the non-magnetic layer is metal including at least one element selected from the group consisting of Zr, Hf, Au, and Ag.
摘要翻译： 可以减少自旋注入写入所需的电流。 磁阻效应元件包括：第一磁化固定层; 无磁化层; 隧道势垒层; 第二磁化固定层，其磁化方向固定为与第一磁化固定层的磁化方向基本上反平行; 非磁性层。 当第二磁化固定层由包括Co的铁磁材料制成时，非磁性层的材料是包括选自Zr，Hf，Rh，Ag和Au中的至少一种元素的金属; 当第二磁化被钉扎层由包括Fe的铁磁材料制成时，用于非磁性层的材料是包括选自Rh，Pt，Ir，Al，Ag和Au中的至少一种元素的金属; 并且当第二磁化被钉扎层由包括Ni的铁磁材料制成时，用于非磁性层的材料是包括选自Zr，Hf，Au和Ag中的至少一种元素的金属。
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