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110 条记录 (耗时 0.026 秒)

    Polishing pads for chemical mechanical planarization
    51.
    发明授权
    Polishing pads for chemical mechanical planarization 有权
    抛光垫用于化学机械平面化

    公开(公告)号：US06860802B1

    公开(公告)日：2005-03-01

    申请号：US09608537

    申请日：2000-06-30

    申请人： Arun Vishwanathan ,  David B. James ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    发明人： Arun Vishwanathan ,  David B. James ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    IPC分类号： B24B37/04 ,  B24D3/28 ,  B24D13/14 ,  B24D11/00

    CPC分类号： B24B37/26 ,  B24B37/042 ,  B24D3/28

    摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

    摘要翻译： 用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。 该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置， 接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低的弹性恢复，使得片材的机械响应大大无弹性。 改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。 该垫具有稳定的形态，可以容易且一致地再现。 垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。 这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。

    Inter-layer interconnection structure for large electrical connections
    52.
    发明授权
    Inter-layer interconnection structure for large electrical connections 有权
    用于大型电气连接的层间互连结构

    公开(公告)号：US06642597B1

    公开(公告)日：2003-11-04

    申请号：US10272767

    申请日：2002-10-16

    申请人： Peter A. Burke ,  William K. Barth

    发明人： Peter A. Burke ,  William K. Barth

    IPC分类号： H01L3100

    CPC分类号： H01L23/5226 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments of the invention include an electrical interconnection structure for connection to large electrical contacts. The electrical interconnection includes a semiconductor substrate having a conductive pad layer formed thereon. A dielectric layer having a plurality of elongate trenches is formed over the conductive pad layer such that the elongate trenches extend through the dielectric layer to the underlying conductive pad layer. Elongate conductive contacts are formed in the elongate trenches to establish electrical connections to the underlying conductive pad layer. The long axes of the elongate bar trenches can be arranged substantially parallel to the long axes of the slots formed in the copper pad. Alternatively, the long axes of the bar trenches can be arranged transversely to the long axes of the slots formed in the copper pad. In some embodiments, the conductive contacts are formed such that they establish electrical connection with sidewalls of the underlying conductive pad layer. Other embodiments address the methods of manufacturing the electrical interconnection structures of the present invention.

    摘要翻译： 本发明的实施例包括用于连接到大电触头的电互连结构。 电互连包括其上形成有导电焊盘层的半导体衬底。 具有多个细长沟槽的电介质层形成在导电焊盘层上方，使得细长的沟槽延伸通过介电层延伸到下面的导电焊盘层。 在细长的沟槽中形成细长的导电触点以建立与下面的导电焊盘层的电连接。 细长条沟的长轴可以布置成基本上平行于形成在铜垫中的槽的长轴。 或者，条形沟槽的长轴可以横向于形成在铜垫中的槽的长轴布置。 在一些实施例中，导电触点形成为使得它们与下面的导电焊盘层的侧壁建立电连接。 其他实施例涉及制造本发明的电互连结构的方法。

    Polishing pads for chemical mechanical planarization
    53.
    发明授权
    Polishing pads for chemical mechanical planarization 有权

    公开(公告)号：US06582283B2

    公开(公告)日：2003-06-24

    申请号：US10193429

    申请日：2002-07-11

    申请人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    发明人： David B. James ,  Arun Vishwanathan ,  Lee Melbourne Cook ,  Peter A. Burke ,  David Shidner

    IPC分类号： B24B100

    CPC分类号： B24B37/26 ,  B24B37/042 ,  B24D3/28

    摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

    Polishing pad having a wear level indicator and system using the same
    57.
    发明授权
    Polishing pad having a wear level indicator and system using the same 失效
    具有磨损水平指示器的抛光垫和使用它的系统

    公开(公告)号：US6106661A

    公开(公告)日：2000-08-22

    申请号：US74892

    申请日：1998-05-08

    申请人： Christopher H. Raeder ,  Kevin D. Shipley ,  Peter A. Burke

    发明人： Christopher H. Raeder ,  Kevin D. Shipley ,  Peter A. Burke

    IPC分类号： B24B37/26 ,  B24D13/14 ,  C23F1/02

    CPC分类号： B24B37/26

    摘要： A polishing pad having a wear level indicator and a polishing system employing the same is provided. A polishing pad, in accordance with one embodiment of the invention, includes a pad structure and an indicator, disposed in the pad structure, indicating the wear level of the pad structure. The pad structure may, for example, include a top pad and a bottom pad with the indicator being disposed in the top pad. The wear level may, for example, be a critical thickness of the polishing pad which indicates the end of the pad lifetime or which indicates the need to change polishing processing. The use of a wear level indicator allows for efficient and reliable pad wear level indication.

    摘要翻译： 提供了一种具有磨损水平指示器和使用其的抛光系统的抛光垫。 根据本发明的一个实施例的抛光垫包括设置在垫结构中的衬垫结构和指示器，指示衬垫结构的磨损水平。 垫结构可以例如包括顶垫和底垫，其中指示器设置在顶垫中。 磨损水平可以例如是抛光垫的临界厚度，其指示焊盘寿命的结束或者指示需要改变抛光处理。 使用磨损水平指示器可以实现高效可靠的垫磨损水平指示。

    Polishing pad with radially extending tapered channels
    58.
    发明授权
    Polishing pad with radially extending tapered channels 失效
    具有径向延伸锥形通道的抛光垫

    公开(公告)号：US5645469A

    公开(公告)日：1997-07-08

    申请号：US709179

    申请日：1996-09-06

    申请人： Peter A. Burke ,  Bradley J. Yellitz

    发明人： Peter A. Burke ,  Bradley J. Yellitz

    IPC分类号： B24B37/26 ,  B24B1/00

    CPC分类号： B24B37/26

    摘要： A polishing pad having a polishing surface with radially extending tapered channels is disclosed. The polishing surface includes an inner radius within an outer radius, and the channels extend from the inner radius to the outer radius. Preferably, the outer radius is spaced from an outer circumferential edge of the polishing surface, the inner radius is an inner circumferential edge of the polishing surface, and the channels taper laterally and vertically at the outer radius. The channels are dimensioned and configured to direct slurry from the inner radius to the outer radius. The channels can be shaped with opposing sidewalls that are parallel in a first portion and diagonally converge in a second portion to form a sunburst pattern, or alternatively, with opposing sidewalls that continuously curve in a first rotational direction to form a starfish pattern. A polishing method includes positioning a wafer over the outer radius while introducing a slurry to facilitate polishing the wafer, and positioning the wafer inside the outer radius while introducing a cleaning fluid to facilitate cleaning the wafer.

    摘要翻译： 公开了具有带径向延伸的锥形通道的抛光表面的抛光垫。 抛光表面包括在外半径内的内半径，并且通道从内半径延伸到外半径。 优选地，外半径与抛光表面的外圆周边缘间隔开，内半径是抛光表面的内圆周边缘，并且通道在外半径处横向和垂直地缩小。 通道的尺寸和构造用于将浆料从内半径引导到外半径。 通道可以被成形为具有在第一部分中平行并且在第二部分中对角地会聚以形成阳光照射图案的相对侧壁，或者可选地，具有在第一旋转方向上连续弯曲以形成海星图案的相对侧壁。 抛光方法包括将晶片定位在外半径上，同时引入浆料以便于抛光晶片，并且将晶片定位在外半径内，同时引入清洁流体以便于清洁晶片。

    Chemical-mechanical polishing tool with end point measurement station
    59.
    发明授权
    Chemical-mechanical polishing tool with end point measurement station 失效
    化学机械抛光工具，带终点测量站

    公开(公告)号：US5492594A

    公开(公告)日：1996-02-20

    申请号：US311807

    申请日：1994-09-26

    申请人： Peter A. Burke ,  Eric H. Freeman ,  Gilbert H. Ross

    发明人： Peter A. Burke ,  Eric H. Freeman ,  Gilbert H. Ross

    IPC分类号： B24B37/005 ,  H01L21/304 ,  H01L21/3105 ,  B24B1/00 ,  B24B37/00

    CPC分类号： B24B37/005 ,  G01B7/085 ,  H01L21/31053

    摘要： This is a wafer polishing and planarizing tool in which there is incorporated a separate measuring station and means for moving the wafer and immersing the wafer into the measuring station without removing it from the polishing head. The wafer being treated is quickly, reliably and periodically checked over its entire surface to determine the thickness of any dielectric on its surface. The measuring station contains a plurality of measuring electrodes immersed in an electrolyte so that when the wafer to be measured is introduced into the station not only is the wafer surface cleaned of any slurry or other contaminants but simultaneously the measuring electrodes see a constant medium to provide multi-point thickness measurements across the entire wafer surface. Thus measurement variations due to pad or slurry conditions are eliminated.

    摘要翻译： 这是一种晶片抛光和平面化工具，其中结合有单独的测量站和用于移动晶片并将晶片浸入测量站而不将其从抛光头移除的装置。 正在处理的晶片在其整个表面上快速，可靠且周期性地检查，以确定其表面上的任何电介质的厚度。 测量站包含浸在电解质中的多个测量电极，使得待测量的晶片被引入工位时，不仅晶片表面清洁了任何浆液或其它污染物，而且同时测量电极看到一个恒定的介质，以提供 整个晶圆表面的多点厚度测量。 因此消除了由于焊盘或浆料条件引起的测量变化。