公开(公告)号：US5555271A

公开(公告)日：1996-09-10

申请号：US363619

申请日：1994-12-23

申请人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

发明人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3218

摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

摘要翻译： 在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层， 形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。