-
公开(公告)号：US5555271A
公开(公告)日：1996-09-10
申请号：US363619
申请日：1994-12-23
申请人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
发明人： Shoji Honda , Masayuki Shono , Ryoji Hiroyama , Yasuyuki Bessho , Hiroyuki Kase , Toyozo Nishida , Takahiro Uetani , Junko Suzuki
CPC分类号： B82Y20/00 , H01S5/20 , H01S5/34326 , H01S5/2004 , H01S5/2231 , H01S5/3202 , H01S5/3213 , H01S5/3218
摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.
摘要翻译： 在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层， 形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。
-
公开(公告)号：US5586136A
公开(公告)日：1996-12-17
申请号：US270056
申请日：1994-07-01
申请人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
发明人： Shoji Honda , Masayuki Shono , Yasuyuki Bessho , Ryoji Hiroyama , Hiroyuki Kase , Takatoshi Ikegami
CPC分类号： B82Y20/00 , H01S5/34326 , H01S5/1039 , H01S5/2013 , H01S5/2231 , H01S5/3202 , H01S5/3403
摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.
摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。
-
公开(公告)号：US6044099A
公开(公告)日：2000-03-28
申请号：US924826
申请日：1997-09-05
CPC分类号： H01S5/16 , B82Y20/00 , H01S3/22 , H01S5/168 , H01S5/34 , H01S5/2205 , H01S5/2206 , H01S5/2231 , H01S5/3202 , H01S5/3403 , H01S5/34326
摘要： A semiconductor laser device comprises an n-type cladding layer, an active layer formed on the n-type cladding layer and having a quantum well structure including one or a plurality of quantum well layers, a p-type cladding layer comprising a flat portion formed on the active layer and a stripe-shaped ridge portion on the flat portion, and a current blocking layer formed on the flat portion so as to cover the side surface of the ridge portion and formed on a region on the upper surface of the ridge portion from one of facets of a cavity to a position at a predetermined distance therefrom.
摘要翻译： 一种半导体激光器件包括n型包覆层，形成在n型包层上的有源层，并具有包括一个或多个量子阱层的量子阱结构，p型包层形成为平坦部分 在平坦部分上的有源层和条形脊部分上形成的电流阻挡层，以及形成在平坦部分上的电流阻挡层，以覆盖脊部的侧表面并形成在脊部的上表面上的区域上 从空腔的一个面到距预定距离的位置。
-
公开(公告)号：US5963572A
公开(公告)日：1999-10-05
申请号：US773346
申请日：1996-12-26
申请人： Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
发明人： Ryoji Hiroyama , Takahiro Uetani , Kiyoshi Oota , Koji Komeda , Masayuki Shono , Akira Ibaraki , Keiichi Yodoshi
CPC分类号： H01S5/2231 , H01S5/2206 , H01S5/222
摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.
摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。
-
5.发明申请NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DIODE, NITRIDE-BASED SEMICONDUCTOR LASER DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING NITRIDE-BASED SEMICONDUCTOR LAYER 审中-公开基于氮化物的半导体发光二极管，基于氮化物的半导体激光器件，其制造方法和形成基于氮化物的半导体层的方法公开(公告)号：US20100265981A1
公开(公告)日：2010-10-21
申请号：US12809770
申请日：2008-12-12
CPC分类号： H01S5/32341 , H01L33/007 , H01L33/16 , H01L33/20 , H01S5/0202 , H01S5/0203 , H01S5/18 , H01S5/2231 , H01S5/3203 , H01S5/4031
摘要： A nitride-based semiconductor light-emitting diode capable of suppressing complication of a manufacturing process while improving light extraction efficiency from a light-emitting layer and further improving flatness of a semiconductor layer is obtained. This nitride-based semiconductor light-emitting diode (30) includes a substrate (11) formed with a recess portion (21) on a main surface and a nitride-based semiconductor layer (12) having a light-emitting layer (14) on the main surface and including a first side surface (12a) having a (000-1) plane formed to start from a first inner side surface (21a) of the recess portion and a second side surface (12b) formed at a region opposite to the first side surface with the light-emitting layer therebetween to start from a second inner side surface (21b) of the recess portion on the main surface.
摘要翻译： 能够抑制发光层的光提取效率的提高，进一步提高半导体层的平坦度的氮化物系半导体发光二极管。 该氮化物系半导体发光二极管（30）具备在主表面上形成有凹部（21）的基板（11）和具有发光层（14）的氮化物系半导体层（12） 所述主表面包括形成为从所述凹部的第一内侧表面（21a）开始的（000-1）面的第一侧表面（12a）和形成在与所述凹部相对的区域形成的第二侧表面（12b） 其间具有发光层的第一侧表面从主表面上的凹部的第二内侧表面（21b）开始。
-
公开(公告)号：US5559818A
公开(公告)日：1996-09-24
申请号：US312696
申请日：1994-09-27
申请人： Masayuki Shono , Ryoji Hiroyama , Keiichi Yodoshi
发明人： Masayuki Shono , Ryoji Hiroyama , Keiichi Yodoshi
CPC分类号： B82Y20/00 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34326
摘要： The present invention is directed to a semiconductor laser device in which an active layer is constituted by a quantum well layer having a structure in which well layers and barrier layers which are formed on a GaAs substrate are alternately layered, cladding layers are provided so as to interpose the active layer, the value of a strain on each of the well layers is -0.8% to -1.5%, the thickness of a well layer is from 80 .ANG. to 180 .ANG., the value of strain on each of the barrier layers is +0.5% to +1.0%, the thickness of the barrier layer is 20 .ANG. to 60 .ANG., and the respective numbers of layered well layers and barrier layers are 2 to 4.
摘要翻译： 本发明涉及一种半导体激光器件，其中有源层由具有结构的量子阱层构成，其中形成在GaAs衬底上的阱层和阻挡层交替层叠，提供包层，以便 插入有源层，阱层的应变值为-0.8％〜-1.5％，阱层的厚度为80〜180，势垒层的应变值为 + 0.5％〜+ 1.0％时，阻挡层的厚度为20〜60，分层阱层和阻挡层的数量为2〜4。
-
7.发明授权Nitride-based semiconductor light-emitting device, nitride-based semiconductor laser device, nitride-based semiconductor light-emitting diode, method of manufacturing the same, and method of forming nitride-based semiconductor layer 有权基于氮化物的半导体发光器件，氮化物基半导体激光器件，氮化物基半导体发光二极管，其制造方法以及形成氮化物基半导体层的方法公开(公告)号：US08750343B2
公开(公告)日：2014-06-10
申请号：US12680412
申请日：2008-09-25
CPC分类号： H01S5/18 , B82Y20/00 , H01L33/16 , H01L33/20 , H01L33/32 , H01S5/0202 , H01S5/0207 , H01S5/02208 , H01S5/0224 , H01S5/02252 , H01S5/02292 , H01S5/028 , H01S5/0282 , H01S5/0683 , H01S5/1085 , H01S5/22 , H01S5/3202 , H01S5/34333 , H01S5/42
摘要： A nitride-based semiconductor light-emitting device capable of suppressing complication of a manufacturing process and reduction of luminous efficiency is obtained. This nitride-based semiconductor light-emitting device (50) includes a nitride-based semiconductor device layer (23) formed on a main surface of a (1-100) plane of a substrate (21), having a light-emitting layer (26) having a main surface of a (1-100) plane, a facet (50a) formed on an end of a region including the light-emitting layer (26) of the nitride-based semiconductor device layer (23), formed by a (000-1) plane extending in a direction substantially perpendicular to the main surface ((1-100) plane) of the light-emitting layer (26), and a reflection surface (50c) formed on a region opposed to the facet (50a) of the (000-1) plane, formed by a growth surface of the nitride-based semiconductor device layer (23), extending in a direction inclined at an angle θ1 (about) 62° with respect to the facet (50a).
摘要翻译： 可以获得能够抑制制造工序的复杂化和发光效率降低的氮化物系半导体发光装置。 该氮化物系半导体发光元件（50）具有形成在基板（（1）的（1-100）面的主面上的氮化物系半导体器件层，具有发光层 26），具有（1-100）面的主表面的小面（50a），形成在包括氮化物类半导体器件层（23）的发光层（26）的区域的一端的端部，由 （（1-100）面）的方向延伸的（000-1）面，以及形成在与该面相对的区域上的反射面（50c） 由所述氮化物基半导体器件层（23）的生长表面形成的所述（000-1）面的（50a），所述生长表面沿着相对于所述刻面以角度θ倾斜的方向（大约）62°延伸; （50a）。
-
公开(公告)号：US07903709B2
公开(公告)日：2011-03-08
申请号：US12357282
申请日：2009-01-21
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。
-
公开(公告)号：US20090185594A1
公开(公告)日：2009-07-23
申请号：US12357282
申请日：2009-01-21
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。
-
公开(公告)号：US08193016B2
公开(公告)日：2012-06-05
申请号：US12985632
申请日：2011-01-06
申请人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
发明人： Ryoji Hiroyama , Daijiro Inoue , Yasuyuki Bessho , Masayuki Hata
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0201 , H01S5/0202 , H01S5/0203 , H01S5/0425 , H01S5/16 , H01S5/22 , H01S5/2201
摘要： A semiconductor laser device includes a substrate and a semiconductor layer formed on a surface of the substrate and having a waveguide extending in a first direction parallel to the surface, wherein the waveguide is formed on a region approaching a first side from a center of the semiconductor laser device in a second direction parallel to the surface and intersecting with the first direction, a first region separated from the waveguide on a side opposite to the first side of the waveguide and extending parallel to the first direction and a first recess portion separated from the waveguide on an extension of a facet of the waveguide, intersecting with the first region and extending in the second direction are formed on an upper surface of the semiconductor laser device, and a thickness of the semiconductor layer on the first region is smaller than a thickness of the semiconductor layer on a region other than the first region.
摘要翻译： 半导体激光器件包括衬底和形成在衬底的表面上的半导体层，并且具有沿平行于表面的第一方向延伸的波导，其中波导形成在从半导体的中心接近第一侧的区域 激光装置在与第一方向平行的第二方向上与第一方向相交的第一区域，与波导的与波导的第一侧相反的一侧并且平行于第一方向延伸的第一凹部， 在半导体激光器件的上表面上形成有与第一区域交叉且沿第二方向延伸的波导的小平面的延伸的波导，并且第一区域上的半导体层的厚度小于厚度 的第一区域以外的区域。
-
-
-
-
-
-
-
-
-
搜索结果
51 条记录 (耗时 0.038 秒)
