公开(公告)号：US5555271A

公开(公告)日：1996-09-10

申请号：US363619

申请日：1994-12-23

申请人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

发明人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3218

摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

摘要翻译： 在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层， 形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。

公开(公告)号：US5586136A

公开(公告)日：1996-12-17

申请号：US270056

申请日：1994-07-01

申请人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

发明人： Shoji Honda ,  Masayuki Shono ,  Yasuyuki Bessho ,  Ryoji Hiroyama ,  Hiroyuki Kase ,  Takatoshi Ikegami

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34326 ,  H01S5/1039 ,  H01S5/2013 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3403

摘要： A semiconductor laser device according to the present invention comprises a GaAs substrate of a first conductivity type, a cladding layer of the first conductivity type formed on one main surface of the substrate, an active layer having a quantum well structure in which a tensile strain quantum well layer and a quantum barrier layer which are formed on the cladding layer of the first conductivity type are alternately laminated, and a cladding layer of a second conductivity type formed on the active layer. The one main surface of the substrate is a surface misoriented by 9.degree. to 17.degree. from a {100} plane of the substrate in a direction, and the cavity length is not less than 150 .mu.m nor more than 300 .mu.m.

摘要翻译： 根据本发明的半导体激光器件包括第一导电类型的GaAs衬底，形成在衬底的一个主表面上的第一导电类型的覆层，具有量子阱结构的有源层，其中拉伸应变量 形成在第一导电类型的包覆层上的阱层和量子势垒层交替层叠，并且在有源层上形成第二导电类型的包覆层。 基板的一个主表面是在<011>方向上从基板的{100}面偏离9°至17°的表面，并且空腔长度不小于150μm不大于300μm 。