公开(公告)号：US20200035611A1

公开(公告)日：2020-01-30

申请号：US16215899

申请日：2018-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung-Eun Byun ,  Keunwook SHIN ,  Yonghoon KIM ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Changseok LEE ,  Changhyun KIM ,  Yeonchoo CHO

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768

Abstract: Provided are an interconnect structure and an electronic device including the interconnect structure. The interconnect structure includes a dielectric layer including at least one trench, a conductive wiring filling an inside of the at least one trench, and a cap layer on at least one surface of the conductive wiring. The cap layer includes nanocrystalline graphene. The nanocrystalline includes nano-sized crystals.

公开(公告)号：US20170092592A1

公开(公告)日：2017-03-30

申请号：US15083827

申请日：2016-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Seongjun PARK ,  Hyunjae SONG

IPC: H01L23/532 ,  H01L23/528

CPC classification number: H01L23/53276 ,  H01L23/485 ,  H01L23/5283

Abstract: A hybrid interconnect structure includes a graphene layer between a non-metallic material layer and a metal layer, and a first interfacial bonding layer between the non-metallic material layer and the graphene layer, or the metal layer and the graphene layer. The graphene layer connects the non-metallic material layer and the metal layer, and the first bonding layer includes a metallic material.