公开(公告)号：US20240113028A1

公开(公告)日：2024-04-04

申请号：US18471715

申请日：2023-09-21

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Yeonchoo CHO ,  Elise BRUTSCHEA ,  Hongkun PARK ,  Minsu SEOL

IPC: H01L23/532 ,  H01L23/528 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L23/53266 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53252 ,  H01L29/45 ,  H01L29/4908

Abstract: An interconnection layer structure including a two-dimensional (2D) material, an electronic device including the interconnection layer structure, and an electronic apparatus including the electronic device are disclosed. The interconnection layer structure may include a first interconnection layer, and a work function modulation layer directly on one surface of the first interconnection layer. The first interconnection layer may include a metal layer, and the work function modulation layer may be a two-dimensional (2D) material layer that includes ruthenium (Ru).

公开(公告)号：US20210020438A1

公开(公告)日：2021-01-21

申请号：US16928560

申请日：2020-07-14

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hoijoon KIM ,  Hyeonjin SHIN ,  Wonsik AHN ,  Mirine LEEM ,  Yeonchoo CHO

IPC: H01L21/02

Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

公开(公告)号：US20250107096A1

公开(公告)日：2025-03-27

申请号：US18581186

申请日：2024-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo CHO ,  Junyoung KWON ,  Huije RYU ,  Minsu SEOL

IPC: H10B43/30 ,  H10B43/27

Abstract: A memory device may include a gate electrode, a channel layer spaced apart from the gate electrode, a charge trap layer between the gate electrode and the channel layer, and a two-dimensional material layer arranged between the charge trap layer and the gate electrode. The two-dimensional material layer may include a material having an electron affinity of less than 1 eV.

公开(公告)号：US20240151522A1

公开(公告)日：2024-05-09

申请号：US18412823

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Yeonchoo CHO ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN

IPC: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/285 ,  H01L21/66 ,  H01L29/45

CPC classification number: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/28512 ,  H01L22/12 ,  H01L29/45 ,  G01N2223/085 ,  G01N2223/61

Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

公开(公告)号：US20230024913A1

公开(公告)日：2023-01-26

申请号：US17949418

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

Inventor： Kyung-Eun BYUN ,  Hyoungsub KIM ,  Taejin PARK ,  Hoijoon KIM ,  Hyeonjin SHIN ,  Wonsik AHN ,  Mirine LEEM ,  Yeonchoo CHO

IPC: H01L21/02

Abstract: A method of forming a transition metal dichalcogenide thin film on a substrate includes treating the substrate with a metal organic material and providing a transition metal precursor and a chalcogen precursor around the substrate to synthesize transition metal dichalcogenide on the substrate. The transition metal precursor may include a transition metal element and the chalcogen precursor may include a chalcogen element.

公开(公告)号：US20220246718A1

公开(公告)日：2022-08-04

申请号：US17465213

申请日：2021-09-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeonchoo CHO ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/04 ,  H01L29/49 ,  H01L23/522 ,  H01L29/16 ,  H01L29/161

Abstract: A semiconductor device is provided. The semiconductor device includes a metal layer, a semiconductor layer in electrical contact with the metal layer, a two-dimensional (2D) material layer disposed between the metal layer and the semiconductor layer and having a 2D crystal structure, and a metal compound layer disposed between the 2D material layer and the semiconductor layer.

公开(公告)号：US20180061490A1

公开(公告)日：2018-03-01

申请号：US15448998

申请日：2017-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Seunggeol NAM ,  Changhyun KIM ,  Hyeonjin SHIN ,  Yeonchoo CHO ,  Jinseong HEO ,  Seongjun PARK

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24

CPC classification number: G11C13/0004 ,  G11C13/0069 ,  G11C13/0097 ,  H01L27/24 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/1641

Abstract: A phase change memory device may include a phase change layer that includes a two-dimensional (2D) material. The phase change layer may include a layered structure that includes one or more layers of 2D material. The phase change layer may be provided between a first electrode and a second electrode, and the phase of at least a portion of one or more of the layers of 2D material may be changed based on an electrical signal applied to the phase change layer through the first electrode and the second electrode. The 2D material may include a chalcogenide-based material or phosphorene. The 2D material may be associated with a phase change temperature that is greater than or equal to about 200° C. and lower than or equal to about 500° C.

公开(公告)号：US20180047818A1

公开(公告)日：2018-02-15

申请号：US15439031

申请日：2017-02-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seunggeol NAM ,  Hyeonjin SHIN ,  Yeonchoo CHO ,  Minhyun LEE ,  Changhyun KIM ,  Seongjun PARK

IPC: H01L29/40 ,  H01L29/78

CPC classification number: H01L29/408 ,  H01L21/283 ,  H01L29/41725 ,  H01L29/456 ,  H01L29/66568 ,  H01L29/78 ,  H01L29/7839 ,  H01L29/786

Abstract: A semiconductor device includes a silicon semiconductor layer including at least one region doped with a first conductive type dopant, a metal material layer electrically connected to the doped region, and a self-assembled monolayer (SAM) between the doped region and the metal material layer, the SAM forming a molecular dipole on an interface of the silicon semiconductor layer in a direction of reducing a Schottky barrier height (SBH).

公开(公告)号：US20170033003A1

公开(公告)日：2017-02-02

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Seongjun PARK ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Jaeho LEE ,  Changseok LEE ,  Yeonchoo CHO

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L29/45

CPC classification number: H01L21/76846 ,  H01L21/28525 ,  H01L21/28568 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

Abstract translation: 多层结构包括第一材料层，第二材料层和扩散阻挡层。 第二材料层连接到第一材料层。 第二材料层与第一材料层间隔开。 扩散阻挡层在第一材料层和第二材料层之间。 扩散阻挡层可以包括二维（2D）材料。 2D材料可以是非石墨烯材料，例如具有2D晶体结构的金属硫族化物基材料。 第一材料层可以是半导体或绝缘体，第二材料层可以是导体。 多层结构的至少一部分可以构成电子设备的互连。

公开(公告)号：US20240113211A1

公开(公告)日：2024-04-04

申请号：US18475803

申请日：2023-09-27

Applicant: Samsung Electronics Co., Ltd. ,  President and Fellows Of Harvard College

Inventor： Yeonchoo CHO ,  Elise BRUTSCHEA ,  Philip KIM ,  Hongkun PARK ,  Minsu SEOL

IPC: H01L29/76 ,  H01L21/02 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L21/02568 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a two-dimensional (2D) material having a semiconductor characteristic, a conductive layer on a first surface of the 2D material layer, and an alignment adjusting layer on a second surface of the 2D material layer. The second surface may be different from the first surface. The alignment adjusting layer may adjust an energy-band alignment between the 2D material layer and the conductive layer.