DISPLAY TRANSFER STRUCTURE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220190193A1

    公开(公告)日:2022-06-16

    申请号:US17479706

    申请日:2021-09-20

    Abstract: A display transfer structure includes a base layer, a flexible barrier rib positioned on the base layer and having a plurality of holes therein, and a plurality of micro light emitting diodes (LEDs) positioned respectively in the plurality of holes. A method of manufacturing the display transfer structure includes forming a flexible barrier rib having holes on a base layer, supplying liquid to the holes, supplying micro LEDs to the liquid, and scanning the flexible barrier rib with an absorber capable of absorbing the liquid to align each of the micro LEDs in a respective hole such that electrodes of the micro LEDs face an outside of the holes.

    MICRO-SEMICONDUCTOR CHIP WETTING ALIGNMENT APPARATUS

    公开(公告)号:US20220189810A1

    公开(公告)日:2022-06-16

    申请号:US17383012

    申请日:2021-07-22

    Abstract: A micro-semiconductor chip wet alignment apparatus is provided. The micro-semiconductor chip wet alignment apparatus includes a semiconductor chip wet supply module configured to supply the plurality of micro-semiconductor chips and a liquid onto the transfer substrate so that the plurality of micro-semiconductor chips are flowable on the transfer substrate; and a chip alignment module including an absorber capable of relative movement along a surface of the transfer substrate and configured to absorb the liquid so that the plurality of micro-semiconductor chips are aligned in the plurality of grooves.

    ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME
    60.
    发明申请
    ULTRASONIC TRANSDUCER AND METHOD OF MANUFACTURING THE SAME 有权
    超声波传感器及其制造方法

    公开(公告)号:US20160020709A1

    公开(公告)日:2016-01-21

    申请号:US14701580

    申请日:2015-05-01

    CPC classification number: B06B1/0292

    Abstract: An ultrasonic transducer and a method of manufacturing the same are provided. The ultrasonic transducer includes a substrate, a first insulation layer, and a first thin film layer; a plurality of support members formed on the first thin film layer; a second thin film layer supported by the plurality of support members; a cavity between the first thin film layer and the second thin film layer; and a common ground electrode on the second thin film layer.

    Abstract translation: 提供了一种超声换能器及其制造方法。 超声波换能器包括基板,第一绝缘层和第一薄膜层; 形成在所述第一薄膜层上的多个支撑构件; 由所述多个支撑构件支撑的第二薄膜层; 第一薄膜层和第二薄膜层之间的空腔; 以及第二薄膜层上的公共接地电极。

Patent Agency Ranking