公开(公告)号：US20170207068A1

公开(公告)日：2017-07-20

申请号：US15408733

申请日：2017-01-18

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32165 ,  H01J37/32183

Abstract: In a plasma processing method, first processes and second processes are performed alternately. In each first process, a first gas is supplied into a processing vessel from a gas supply system, and a first high frequency power is supplied from a first high frequency power supply. In each second process, the first high frequency power is supplied from the first high frequency power supply continuously from a first process which is performed just before the corresponding second process. In each second process, a gas switching signal for switching the gas from the first gas to the second gas is applied to the gas supply system. Further, a supply of a second high frequency power is begun by a second high frequency power supply when a parameter such as a load impedance exceeds a threshold value after the gas switching signal is applied to the gas supply system.

公开(公告)号：US20150096684A1

公开(公告)日：2015-04-09

申请号：US14509131

申请日：2014-10-08

Applicant: Tokyo Electron Limited ,  Daihen Corporation

Inventor： Koichi Nagami ,  Koji Itadani ,  Tsuyoshi Komoda

IPC: H01J37/32 ,  C23C16/52 ,  C23C16/505

CPC classification number: C23C16/52 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183

Abstract: In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50Ω).

Abstract translation: 在等离子体处理装置中，分别对具有不同频率的第一脉冲PS1和第二脉冲PS2进行等离子体产生的高频功率RF1和离子吸引用的高频功率RF2进行脉冲调制时，将匹配的阻抗传感器96A 等离子体发生系统的装置40对具有较低频率的第二脉冲PS2的每个周期计算高频传输线43上的负载阻抗的平均值（主移动平均值ma），并输出基于负载阻抗测量值 对负载阻抗的平均值。 然后，匹配控制器94A控制匹配电路88A内的电抗元件XH1和XH2的电抗，使得负载阻抗测量值等于或接近于匹配点（50＆OHgr）。