公开(公告)号：US20190122863A1

公开(公告)日：2019-04-25

申请号：US16096759

申请日：2017-04-14

Applicant: Tokyo Electron Limited

Inventor： Kazuya Nagaseki ,  Tatsuro Ohshita ,  Koichi Nagami

IPC: H01J37/32

Abstract: Energy of ions irradiated to a chamber main body is reduced. A plasma processing apparatus includes a chamber main body, a placing table and a high frequency power supply unit. The chamber main body is configured to provide a chamber therein. The chamber main body is connected to a ground potential. The placing table has a lower electrode and is provided within the chamber. The high frequency power supply unit is electrically connected to the lower electrode. The high frequency power supply unit is configured to generate an output wave for bias to be supplied to the lower electrode. The high frequency power supply unit is configured to generate the output wave in which a positive voltage component of a voltage waveform of a high frequency power having a fundamental frequency is reduced.

公开(公告)号：US20180218882A1

公开(公告)日：2018-08-02

申请号：US15938006

申请日：2018-03-28

Applicant: Tokyo Electron Limited

Inventor： Kumiko Ono ,  Hiroshi Tsujimoto ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method includes a first stage of generating plasma of a first processing gas and a second stage of generating plasma of a second processing gas, are performed, a time difference between a start time point of a time period during which the second stage is performed and a start time point of an output of the second processing gas from a gas supply system is decided automatically according to a recipe. A delay time corresponding to flow rates of the first processing gas and the second processing gas in the second stage is specified from a function or a table.

公开(公告)号：US20180115299A1

公开(公告)日：2018-04-26

申请号：US15790170

申请日：2017-10-23

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Norikazu Yamada

IPC: H03H7/40

CPC classification number: H03H7/40

Abstract: Each of a first high frequency power supply and a second high frequency power supply of a plasma processing apparatus is configured to selectively output a continuous wave, a modulated wave and a double-modulated wave. A first average value which determines an impedance at a load side of the first high frequency power supply and a second average value which determines an impedance at a load side of the second high frequency power supply are obtained by using any one of two averaging methods depending on a first high frequency power output from the first high frequency power supply and a second high frequency power output from the second high frequency power supply. An impedance matching of each of a first matching device and a second matching device is performed based on the first average value and the second average value.

公开(公告)号：US09941098B2

公开(公告)日：2018-04-10

申请号：US15464539

申请日：2017-03-21

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32183 ,  H01J37/32449 ,  H01J37/32577

Abstract: In a plasma processing method of sequentially performing multiple cycles, each of which includes plural stages which generate plasma of different processing gases within a processing vessel and which are performed in sequence, a setting of a high frequency power and/or a setting of a level of a DC voltage is changed at an appropriate time point after transitioning from a preceding stage to a succeeding stage. The high frequency power is supplied to one of a first electrode and a second electrode of a plasma processing apparatus, and the processing gas output from a gas supply system is changed when transitioning from the preceding stage to the succeeding stage. Thereafter, the setting of the high frequency power and/or the setting of the level of the negative DC voltage is changed at a time point when a parameter reflecting an impedance of the plasma exceeds a threshold value.

公开(公告)号：US09754768B2

公开(公告)日：2017-09-05

申请号：US14363382

申请日：2012-12-03

Applicant: Tokyo Electron Limited

Inventor： Norikazu Yamada ,  Toshifumi Tachikawa ,  Koichi Nagami

IPC: B44C1/22 ,  H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/32146

Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.

公开(公告)号：US09663858B2

公开(公告)日：2017-05-30

申请号：US14509131

申请日：2014-10-08

Applicant: Tokyo Electron Limited ,  Daihen Corporation

Inventor： Koichi Nagami ,  Koji Itadani ,  Tsuyoshi Komoda

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  H01J37/32

CPC classification number: C23C16/52 ,  H01J37/32146 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/32183

Abstract: In a plasma processing apparatus, when pulse-modulating the high frequency power RF1 for plasma generation and the high frequency power RF2 for ion attraction with a first pulse PS1 and a second pulse PS2 having different frequencies, respectively, an impedance sensor 96A in a matching device 40 of a plasma generation system calculates an average value (primary moving average value ma) of an load impedance on a high frequency transmission line 43 for each cycle of the second pulse PS2 having a lower frequency, and outputs a load impedance measurement value based on those average values of the load impedance. Then, a matching controller 94A controls reactances of reactance elements XH1 and XH2 within a matching circuit 88A such that the load impedance measurement value is equal or approximate to a matching point (50Ω).

公开(公告)号：US20140305905A1

公开(公告)日：2014-10-16

申请号：US14363382

申请日：2012-12-03

Applicant: Tokyo Electron Limited

Inventor： Norikazu Yamada ,  Toshifumi Tachikawa ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32091 ,  H01J37/32146

Abstract: At a time point T0 when starting a process, a duty ratio of a high frequency power RF1 to which power modulation is performed is set to be an initial value (about 90%) which allows plasma to be ignited securely under any power modulating conditions. At the substantially same time of starting the process, the duty ratio of the high frequency power RF1 is gradually reduced from the initial value (about 90%) in a regular negative gradient or in a ramp waveform. At a time point t2 after a lapse of a preset time Td, the duty ratio has an originally set value Ds for an etching process. After the time point t2, the duty ratio is fixed or maintained at the set value Ds until the end (time point T4) of the process.

Abstract translation: 在开始处理的时间点T0，将进行功率调制的高频功率RF1的占空比设定为允许等离子体在任何功率调制条件下可靠地点火的初始值（约90％）。 在开始该处理的基本相同的时刻，高频功率RF1的占空比从常规负梯度或斜坡波形的初始值（约90％）逐渐减小。 在经过预设时间Td之后的时间点t2，占空比具有用于蚀刻处理的初始设定值Ds。 在时间点t2之后，占空比固定或维持在设定值Ds，直到处理结束（时间点T4）。

公开(公告)号：US11646181B2

公开(公告)日：2023-05-09

申请号：US17376771

申请日：2021-07-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Natsumi Torii ,  Koichi Nagami

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32183 ,  H01J37/32642 ,  H01J37/32935

Abstract: A plasma processing apparatus includes: a chamber; a substrate support provided inside the chamber and including an electrode, an electrostatic chuck provided on the electrode, and an edge ring that is disposed on the electrostatic chuck while surrounding the substrate placed on the electrostatic chuck; a radio-frequency power supply that supplies radio-frequency power for generating plasma from a gas within the chamber; a DC power supply that applies a negative DC voltage to the edge ring; and a controller that controls the radio-frequency power and the DC voltage. The controller controls the apparatus to execute a process including: (a) stopping application of the DC voltage while stopping supply of the radio-frequency power; and (b) starting the application of the DC voltage after a predetermined delay time elapses since the supply of the radio-frequency power.

公开(公告)号：US20220028665A1

公开(公告)日：2022-01-27

申请号：US17495908

申请日：2021-10-07

Applicant: Tokyo Electron Limited

Inventor： Koichi Nagami ,  Kazunobu Fujiwara ,  Tatsuro Ohshita ,  Takashi Dokan ,  Koji Maruyama ,  Kazuya Nagaseki ,  Shinji Himori

IPC: H01J37/32

Abstract: A decrease of an etching rate of a substrate can be suppressed, and energy of ions irradiated to an inner wall of a chamber main body can be reduced. A plasma processing apparatus includes a DC power supply configured to generate a negative DC voltage to be applied to a lower electrode of a stage. In a plasma processing performed by using the plasma processing apparatus, a radio frequency power is supplied to generate plasma by exciting a gas within a chamber. Further, the negative DC voltage from the DC power supply is periodically applied to the lower electrode to attract ions in the plasma onto the substrate placed on the stage. A ratio occupied, within each of cycles, by a period during which the DC voltage is applied to the lower electrode is set to be equal to or less than 40%.

公开(公告)号：US10763126B2

公开(公告)日：2020-09-01

申请号：US16393261

申请日：2019-04-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Koichi Nagami ,  Kazuya Nagaseki

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/14 ,  H01L21/67

Abstract: An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.