公开(公告)号：US20170018704A1

公开(公告)日：2017-01-19

申请号：US14801988

申请日：2015-07-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Harry-Hak-Lay Chuang ,  Hung Cho Wang ,  Tien-Wei Chiang ,  Wen-Chun You

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L27/228 ,  H01L43/08

Abstract: Some embodiments relate to a magnetoresistive random-access memory (MRAM) cell. The cell includes a bottom electrode having a central bottom electrode portion surrounded by a peripheral bottom electrode portion. Step regions of the conductive bottom electrode couple the central and peripheral bottom electrode portions to one another such that an upper surface of the central portion is recessed relative to an upper surface of the peripheral portion. A magnetic tunneling junction (MTJ) has MTJ outer sidewalls which are disposed over the bottom central electrode portion and which are arranged between the step regions. A top electrode is disposed over an upper surface of the MTJ. Other devices and methods are also disclosed.

Abstract translation: 一些实施例涉及磁阻随机存取存储器（MRAM）单元。 电池包括具有由周边底部电极部分包围的中央底部电极部分的底部电极。 导电底部电极的台阶区域将中央和外围底部电极部分彼此连接，使得中心部分的上表面相对于周边部分的上表面凹陷。 磁隧道结（MTJ）具有设置在底部中心电极部分上并且设置在台阶区域之间的MTJ外侧壁。 顶部电极设置在MTJ的上表面上。 还公开了其它装置和方法。