Quick heat roller
    52.
    发明授权
    Quick heat roller 失效
    快速加热辊

    公开(公告)号:US06289198B1

    公开(公告)日:2001-09-11

    申请号:US09509916

    申请日:2000-04-04

    IPC分类号: G03G1520

    CPC分类号: G03G15/2053 G03G15/2057

    摘要: A temperature-controlled quick heat roller having an electrical resistance heater sheet provided on an inner surface of the cylinder. The electrical resistance heater is made of at least a high-temperature-coefficient resistance layer so that when the high-temperature-coefficient resistance layer is heated by an electric current, the cylinder is set to a prescribed fixing temperature. Also, the heat roller has a property in which heating electrical power drops as the temperature thereof rises.

    摘要翻译: 一种温度控制的快速加热辊,其具有设置在气缸的内表面上的电阻加热片。 电阻加热器由至少高温系数电阻层构成,当高温系数电阻层被电流加热时,​​将气缸设定在规定的定影温度。 此外,加热辊具有随着其升温而加热电力下降的性质。

    Waterproof construction of wiring harness
    53.
    发明授权
    Waterproof construction of wiring harness 失效
    线束防水结构

    公开(公告)号:US5613857A

    公开(公告)日:1997-03-25

    申请号:US568521

    申请日:1995-12-07

    CPC分类号: B60R16/0207 H01R13/52

    摘要: A waterproof construction of a wiring harness in which a plurality of splicing wires passed through a water immersion area likely to be subjected to water immersion in a motor vehicle and spliced with each other are bundled with other wires, comprising: a terminal which is attached to a distal end of one of the splicing wires; a connector which is disposed at a predetermined position such that the terminal is mounted in a spare terminal pocket of the connector; and a splice portion in which the one of the splicing wires is spliced with the remainder of the splicing wires at a location spaced a predetermined distance from the predetermined position of the connector and disposed in a water nonimmersion area not subjected to water immersion such that the splice portion is disposed in the water nonimmersion area at all times.

    摘要翻译: 一种线束的防水结构,其中多个拼接线穿过可能被浸入机动车辆中的水浸区域并彼此拼接的多个拼接线与其它线束捆绑在一起,包括:端子,其附接到 一个拼接线的远端; 连接器,其设置在预定位置,使得所述端子安装在所述连接器的备用端子槽中; 以及拼接部分,其中一个拼接线与剩余的拼接线拼接在与连接器的预定位置间隔预定距离的位置处,并且设置在不经过水浸的水非浸入区域中,使得 接头部分始终设置在水非侵入区域中。

    Layered electrophotographic sensitive member comprising amorphous
silicon carbide

    公开(公告)号:US4997736A

    公开(公告)日:1991-03-05

    申请号:US399780

    申请日:1989-08-25

    IPC分类号: G02B27/46 G03G5/043 G03G5/082

    摘要: The present invention relates to an electrophotographic sensitive member comprising a photoconductive layer formed of amorphous silicon carbide and an organic semiphotoconductive layer piled up.Photoconductive materials of an electrophotographic sensitive member include inorganic materials, such as Se, Se-Te, As.sub.2 Se.sub.3, ZnO, CdS and amorphous silicon, and various kinds of organic material. Of them, Se has been first used, and then also ZnO, CdS and amorphous silicon have been practically used. On the other hand, as to the organic materials, PVK--TNF has been first practically used, and then a separated function type sensitive member, in which a function of generating an electric charge and a function of transporting the electric charge are put in charge by separate materials, has been proposed. The organic materials have been remarkably developed by this separated function type sensitive member.Also an electrophotographic sensitive member, in which an organic photoconductive layer is piled on an inorganic photoconductive layer, has been proposed. For example, a sensitive member, in which an organic photoconductive layer is piled on a Se layer, was already practically used. However, this sensitive member showed disadvantages in that Se itself is harmful and the sensitivity on the side of long wavelengths is inferior.So, a built-up sensitive member comprising a photoconductive layer formed of amorphous silicon carbide and an organic photoconductive layer has been proposed in Japanese Patent Laid-Open No. Sho 56-14241. With this sensitive member, the above described problems have been eliminated to obtain characteristics such as antipollution and high photosensitivity.It has been, however, found from the measurement of the photosensitivity, surface electric potential and residual electric potential of such the electrophotographic sensitive member produced by the present inventors that satisfactory characteristics are not obtained yet and further improvements are required.The present invention has been achieved as a result of the investigation aiming at the provision of an electrophotographic sensitive member showing satisfactory characteristics, such as photosensitivity, surface electric potential and residual electric potential, in view of the above description. It is an object of the present invention to provide an electrophotographic sensitive member capable of obtaining the high photosensitivity and surface electric potential and reducing the residual electric potential.

    Photosensitive member
    57.
    发明授权
    Photosensitive member 失效
    感光成员

    公开(公告)号:US4409311A

    公开(公告)日:1983-10-11

    申请号:US355377

    申请日:1982-03-08

    摘要: A hydrogen containing amorphous silicon photoconductive layer exhibits infrared absorption peaks between wavenumber of 2000 cm.sup.-1 where Si-H bonds are predominant and wavenumber of 2090 cm.sup.-1 where Si-H.sub.2 bonds are predominant and has an absorption coefficient ratio of the peaks of 2090 cm.sup.-1 to 2000 cm.sup.-1 of about 0.2 to 1.7. Preferably, the photoconductive layer is formed by a glow discharge decomposition and may contain small amount of oxygen and 10 to 20,000 ppm of Group IIIA impurity of the Periodic Table.

    摘要翻译: 含氢非晶硅光电导层表现出波数为2000cm -1的红外吸收峰,其中Si-H键占主导地位,波数为2090cm-1,其中Si-H2键占主导地位,并且峰的吸收系数比为2090 cm-1至2000cm -1约0.2至1.7。 优选地,光电导层由辉光放电分解形成,并且可以含有少量的氧和10〜20,000ppm的元素周期表的IIIA族杂质。

    Direct-heated cathode structure
    58.
    发明授权
    Direct-heated cathode structure 失效
    直热阴极结构

    公开(公告)号:US4251746A

    公开(公告)日:1981-02-17

    申请号:US15620

    申请日:1979-02-27

    CPC分类号: H01J1/15 H01J29/04

    摘要: There is disclosed a direct-heated cathode structure which comprises an insulating substrate; a pair of conductive supporting rods penetrating the substrate in the direction substantially perpendicular to the surface of the substrate and fixed tightly to the substrate; and a conductive member made of a single metal plate and including a first portion which is arranged in a plane spaced apart from the surface of the substrate by a predetermined distance and substantially parallel to the surface of the substrate and is coated with an electron emissive material, second portions which are extended from the first portion in the above-mentioned parallel plane substantially symmetrically with respect to the first portion, third portions which are extended from the end of extension of each of the second portions in the direction substantially perpendicular to the surface of the substrate toward the substrate, and fourth portions which are extended from the ends of the third portions in the direction substantially parallel to the surface of the substrate in the same plane as the third portions and are fixed to the supporting rods in the neighborhood of the end of extension of the fourth portions. Each of the first, second and third portions has a side wall provided along at least a part of the edges of these portions and extending in the direction substantially perpendicular to the surfaces of these portions.

    摘要翻译: 公开了一种直接加热的阴极结构,其包括绝缘基板; 一对导电支撑棒,其在基本上垂直于基板的表面的方向上穿透基板,并紧密地固定到基板上; 以及由单个金属板制成并且包括第一部分的导电部件,所述第一部分布置在与所述基板的表面间隔开预定距离并且基本上平行于所述基板的表面的平面中,并且涂覆有电子发射材料 第二部分从上述平行平面中的第一部分相对于第一部分大致对称​​地延伸,第三部分从基本上垂直于表面的方向从每个第二部分的延伸端延伸 基板朝向基板的第四部分,以及从第三部分的端部沿与第三部分相同的平面中的基板的表面的方向基本平行的方向延伸的第四部分,并且固定到邻近的支撑杆 第四部分的延伸端。 第一,第二和第三部分中的每一个具有沿这些部分的边缘的至少一部分设置的侧壁,并且在基本垂直于这些部分的表面的方向上延伸。

    Silicon-semiconductor-type thermal head
    59.
    发明授权
    Silicon-semiconductor-type thermal head 失效
    硅半导体型热敏头

    公开(公告)号:US4213030A

    公开(公告)日:1980-07-15

    申请号:US817742

    申请日:1977-07-21

    IPC分类号: B41J2/34 H05B1/00

    CPC分类号: B41J2/34

    摘要: A silicon-semiconductor type thermal head comprising a substrate of .alpha.-alumina ceramic of single crystalline sapphire a silicon layer of high electrical resistance formed on the upper surface of the substrate and exothermic dots of low electrical resistance silicon integrally formed on the high resistance silicon layer.The silicon semiconductor type thermal head is formed by forming a substrate of .alpha.-alumina ceramic of single crystalline and sapphire, forming a high resistance layer of silicon on the .alpha.-alumina ceramic, forming a layer of low resistance silicon on the high resistance layer of silicon and selectively etching the low and high resistance silicon layers to produce exothermic dots of low resistance silicon, separated from the substrate by high resistance silicon.

    摘要翻译: 一种硅半导体型热敏头,包括单晶蓝宝石的α-氧化铝陶瓷的衬底,在衬底的上表面上形成的高电阻的硅层,以及一体地形成在高电阻硅层上的低电阻硅的放热点 。 硅半导体型热敏头通过形成单晶和蓝宝石的α-氧化铝陶瓷的衬底形成,在α-氧化铝陶瓷上形成高电阻的硅层,在高电阻层上形成低电阻硅层 并且选择性地蚀刻低电阻和高电阻硅层以产生低电阻硅的放热点,通过高电阻硅与衬底分离。

    Shadow mask assembly
    60.
    发明授权
    Shadow mask assembly 失效
    阴影面具组装

    公开(公告)号:US3931540A

    公开(公告)日:1976-01-06

    申请号:US139020

    申请日:1971-04-30

    申请人: Takao Kawamura

    发明人: Takao Kawamura

    IPC分类号: H01J29/07 H01J29/02

    摘要: In a shadow mask assembly comprising a substantially rectangular shallow dish shaped shadow mask, a rectangular reinforcing frame having a side surface adapted to engage the periphery of the shadow mask and a transverse flat surface formed by a flange bent inwardly at right angles with respect to the side surface, and a plurality of leaf springs for supporting said shadow mask assembly, there are provided a plurality of depressions formed on the frame at points corresponding to the leaf springs.

    摘要翻译: 在包括基本上矩形的浅盘形荫罩的荫罩组件中,具有适于接合荫罩周边的侧表面的矩形加强框架和由相对于所述荫罩成直角向内弯曲的凸缘形成的横向平坦表面 以及用于支撑所述荫罩组件的多个板簧,在与所述板簧相对应的点处,在所述框架上设置有多个凹部。