Light emitting device
    51.
    发明授权
    Light emitting device 有权
    发光装置

    公开(公告)号:US07164148B2

    公开(公告)日:2007-01-16

    申请号:US10515141

    申请日:2004-03-16

    IPC分类号: H01L33/00

    摘要: A CAN package light emitting device comprises a semiconductor laser 1 bonded on a sub mount 6 and a CAN package 2 for housing the semiconductor laser 1 bonded on the sub mount 6. The CAN package 2 comprises a fixing structure 3 for fixing the semiconductor laser at a predetermined position, and a cap 4 covering the semiconductor laser 1 fixed to the fixing structure 3. Vapor pressure of Si organic compound gas in the CAN package 2 is limited to or below 5.4×102 N/m2 to prevent any deposit as thick as inviting characteristics deterioration from being formed on the light emitting portion of the semiconductor laser 1 within the guaranteed time of its proper operation.

    摘要翻译: CAN封装发光器件包括接合在副安装座6上的半导体激光器1和用于容纳接合在副安装座6上的半导体激光器1的CAN封装2。 CAN封装2包括用于将半导体激光器固定在预定位置的固定结构3和覆盖固定到固定结构3的半导体激光器1的盖4。 CAN封装2中的Si有机化合物气体的蒸汽压力被限制在或低于5.4×10 2 N / m 2以下,以防止任何沉积物像引入特性劣化一样厚 在其正常操作的保证时间内形成在半导体激光器1的发光部分上。

    Method of manufacturing semiconductor device
    53.
    发明申请
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US20040087048A1

    公开(公告)日:2004-05-06

    申请号:US10613624

    申请日:2003-07-03

    IPC分类号: H01L021/00

    摘要: Provided is a method of manufacturing a semiconductor device, which is adapted to prevent the deposition of a material on a laser light emitting edge, thereby enabling an improvement in longevity characteristics of a laser. A base having a laser chip mounted thereon is irradiated with an energy beam having a shorter wavelength than an oscillation wavelength of the laser chip. Photolysis and oxidation caused by the energy beam cause the removal of an adherent from the overall base or the deterioration thereof, and incidentally, the adherent is derived from an adhesive sheet used to attach the laser chip to the base, or the like. Preferably, laser light or ultraviolet light, for example, is used as the energy beam. Alternatively, the base having the laser chip mounted thereon may be irradiated with plasma so as to remove the adherent utilizing an ion cleaning effect of the plasma. After irradiation, a top is mounted to the base so as to shut off the laser chip from the outside.

    摘要翻译: 提供一种制造半导体器件的方法,其适于防止材料沉积在激光发射边缘上,从而能够提高激光器的寿命特性。 用具有比激光芯片的振荡波长短的波长的能量束照射安装有激光芯片的基座。 由能量束引起的光解和氧化导致从整个基底中去除附着物或其劣化,附带地,粘合剂衍生自用于将激光芯片附着到基底的粘合片等。 优选地,例如使用激光或紫外线作为能量束。 或者,可以用等离子体照射安装有激光芯片的基座,以便利用等离子体的离子清洁效果去除粘附剂。 照射后,将顶部安装在基座上,以从外部切断激光芯片。

    Packaging of high power semiconductor lasers
    54.
    发明授权
    Packaging of high power semiconductor lasers 失效
    大功率半导体激光器的封装

    公开(公告)号:US5629952A

    公开(公告)日:1997-05-13

    申请号:US481008

    申请日:1995-06-07

    摘要: A package for a high power semiconductor laser comprising a hermetically sealed container filled with a dry gaseous medium containing oxygen. The presence of oxygen in the laser atmosphere is counter to standard practice in the art which teaches the use of an atmosphere of a dry inert gas. The package also includes a getter for organic impurities, e.g., a getter composed of a porous silica or a zeolite. The hydrogen content of the materials used to form the package are reduced by baking at an elevated temperature for an extended period of time, e.g., at 150.degree. C. for 200 hours.

    摘要翻译: 一种用于大功率半导体激光器的封装,包括填充有含氧的干燥气态介质的密封容器。 在激光气氛中存在氧与本领域的标准做法相反,该方法教导了使用干燥惰性气体的气氛。 该包装还包括有机杂质的吸气剂,例如由多孔二氧化硅或沸石组成的吸气剂。 用于形成包装的材料的氢含量通过在升高的温度下长时间烘烤(例如在150℃下)减少200小时。