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    SEMICONDUCTOR LASER LIGHT SOURCE DEVICE
    3.
    发明公开
    SEMICONDUCTOR LASER LIGHT SOURCE DEVICE 审中-公开

    公开(公告)号：US20240097399A1

    公开(公告)日：2024-03-21

    申请号：US18259984

    申请日：2021-04-27

    Applicant: Mitsubishi Electric Corporation

    Inventor： Seiji NAKANO

    IPC: H01S5/024 ,  H01S5/02212 ,  H01S5/02253 ,  H01S5/0231 ,  H01S5/02325 ,  H01S5/0239

    CPC classification number: H01S5/02415 ,  H01S5/02212 ,  H01S5/02253 ,  H01S5/0231 ,  H01S5/02325 ,  H01S5/0239

    Abstract: The first and second lead pins (2b-2d) are arranged on the principal surface side of the dielectric substrate (6). The third lead pin (2e) is arranged on a back surface side of the dielectric substrate (6). The lower substrate (5b) has a protruding portion protruding above the upper substrate (5c). A metalized portion (5d) for supplying power to the thermoelectric devices (5a) is provided at the protruding portion. A temperature control module conductor (9) is provided from the principal surface to an upper side surface of the dielectric substrate (6). The fourth conductive wire (14j,14k) includes a conductive wire (14k) connecting the temperature control module conductor (9) provided on the upper side surface of the dielectric substrate (6) and the third lead pin (2e), and a conductive wire (14j) connecting the temperature control module conductor (9) provided on the principal surface of the dielectric substrate and the metalized portion (5d).

    POWER MONITORING APPROACH FOR VCSELS AND VCSEL ARRAYS
    7.
    发明申请
    POWER MONITORING APPROACH FOR VCSELS AND VCSEL ARRAYS 审中-公开

    公开(公告)号：US20190221997A1

    公开(公告)日：2019-07-18

    申请号：US16204156

    申请日：2018-11-29

    Applicant: Vixar Inc.

    Inventor： Klein L. Johnson ,  David Sandquist ,  Mary Brenner

    IPC: H01S5/0683 ,  H01S5/022 ,  H01S5/42

    CPC classification number: H01S5/0683 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/34 ,  H01S5/423

    Abstract: The present disclosure relates to an approach for monitoring the output power of a VCSEL or VCSEL array in a relatively compact, low profile package. A VCSEL device or VCSEL package of the present disclosure may generally be configured with a photodiode for monitoring output power of one or more VCSELs. In some embodiments, one or more VCSEL devices may be arranged over or on a photodetector, such that the photodetector is configured to detect light emitted through a bottom of the VCSEL. In such embodiments, the VCSEL device may have a patterned bottom metal layer and/or an etched substrate to allow light to pass below or behind the VCSEL to the photodiode. In other embodiments, a photodetector may be arranged on a submount adjacent one or more VCSELs, and may be configured to detect light reflected via a diffuser in order to monitor output power.

    SEMICONDUCTOR LASER DEVICE
    8.
    发明申请
    SEMICONDUCTOR LASER DEVICE 审中-公开

    公开(公告)号：US20180278015A1

    公开(公告)日：2018-09-27

    申请号：US15936113

    申请日：2018-03-26

    Applicant: USHIO OPTO SEMICONDUCTORS, INC.

    Inventor： Masato HAGIMOTO ,  Susumu SORIMACHI ,  Tomonobu TSUCHIYA

    IPC: H01S5/024 ,  H01S5/022 ,  H01S5/02 ,  H01S5/30

    CPC classification number: H01S5/02469 ,  H01S5/0218 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/02476 ,  H01S5/3013

    Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

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