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    LASER SOURCE ASSEMBLY WITH THERMAL CONTROL AND MECHANICALLY STABLE MOUNTING
    2.
    发明申请
    LASER SOURCE ASSEMBLY WITH THERMAL CONTROL AND MECHANICALLY STABLE MOUNTING 有权
    激光源组件具有热控制和机械稳定的安装

    公开(公告)号：US20140314110A1

    公开(公告)日：2014-10-23

    申请号：US13240889

    申请日：2011-09-22

    申请人： David F. Arnone ,  David P. Caffey ,  Michael Pushkarsky ,  Miles Weida

    发明人： David F. Arnone ,  David P. Caffey ,  Michael Pushkarsky ,  Miles Weida

    IPC分类号： H01S5/022 ,  H01S5/34 ,  H01S5/024

    CPC分类号： H01S5/02236 ,  F41G7/224 ,  F41H11/02 ,  F41H13/0056 ,  G01S7/4814 ,  G01S7/495 ,  H01S5/02 ,  H01S5/02224 ,  H01S5/02248 ,  H01S5/02415 ,  H01S5/02423 ,  H01S5/02469 ,  H01S5/06804 ,  H01S5/141 ,  H01S5/3401 ,  H01S5/4087

    摘要： A laser source (340) comprises a first frame (356), a laser (358), and a first mounting assembly (360). The laser (358) generates an output beam (354) that is directed along a beam axis (354A). The first mounting assembly (360) allows the laser (358) to expand and contract relative to the first frame (356) along a first axis and along a second axis that is orthogonal to the beam axis, while maintaining alignment of the output beam (354) so the beam axis (354A) is substantially coaxial with the first axis. The first mounting assembly (360) can include a first fastener assembly (366) that couples the laser (358) to the first frame (356), and a first alignment assembly (368) that maintains alignment of the laser (358) along a first alignment axis (370) that is substantially parallel to the first axis.

    摘要翻译： 激光源（340）包括第一框架（356），激光器（358）和第一安装组件（360）。 激光器（358）产生沿着光束轴线（354A）指向的输出光束（354）。 第一安装组件（360）允许激光器（358）沿着第一轴线并沿着与光束轴线正交的第二轴线相对于第一框架（356）膨胀和收缩，同时保持输出光束的对准（ 354），因此光束轴（354A）与第一轴基本上同轴。 第一安装组件（360）可以包括将激光器（358）耦合到第一框架（356）的第一紧固件组件（366）和保持激光器（358）沿着第一对准组件 第一对准轴（370），其基本上平行于第一轴线。

    Method and System for Avoiding Package Induced Failure in Swept Semiconductor Source
    3.
    发明申请
    Method and System for Avoiding Package Induced Failure in Swept Semiconductor Source 有权
    扫描半导体源避免封装引发故障的方法和系统

    公开(公告)号：US20140119397A1

    公开(公告)日：2014-05-01

    申请号：US14150122

    申请日：2014-01-08

    申请人： Axsun Technologies, Inc.

    发明人： Peter S. Whitney ,  Dale C. Flanders

    IPC分类号： H01S5/026 ,  G01B9/02

    CPC分类号： H01S5/026 ,  G01B9/02091 ,  H01S5/022 ,  H01S5/02216 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/068 ,  H01S5/06825 ,  H01S5/141 ,  H01S5/183

    摘要： Dry oxygen, dry air, or other gases such as ozone are hermetically sealed within the package of the external cavity laser or ASE swept source to avoid packaging-induced failure or PLF. PIF due to hydrocarbon breakdown at optical interfaces with high power densities is believed to occur at the SLED and/or SOA facets as well as the tunable Fabry-Perot reflector/filter elements and/or output fiber. Because the laser is an external cavity tunable laser and the configuration of the ASE swept sources, the power output can be low while the internal power at surfaces can be high leading to PIF at output powers much lower than the 50 mW.

    摘要翻译： 干氧，干燥空气或其他气体如臭氧气密封在外腔激光器或ASE扫频源的封装内，以避免包装引起的故障或PLF。 相信在SLED和/或SOA面以及可调谐法布里 - 珀罗反射器/滤波器元件和/或输出光纤处发生由于在具有高功率密度的光学接口处的烃破坏引起的PIF。 因为激光器是外部可调谐激光器和ASE扫频源的配置，所以功率输出可能很低，而表面的内部功率可能很高，导致PIF的输出功率远低于50 mW。

    Method and System for Avoiding Package Induced Failure in Swept Semiconductor Source
    4.
    发明申请
    Method and System for Avoiding Package Induced Failure in Swept Semiconductor Source 有权
    扫描半导体源避免封装引发故障的方法和系统

    公开(公告)号：US20120257210A1

    公开(公告)日：2012-10-11

    申请号：US13428826

    申请日：2012-03-23

    申请人： Peter S. Whitney ,  Dale C. Flanders

    发明人： Peter S. Whitney ,  Dale C. Flanders

    IPC分类号： G01B9/02 ,  H01S5/026

    CPC分类号： H01S5/026 ,  G01B9/02091 ,  H01S5/022 ,  H01S5/02216 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/02248 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02438 ,  H01S5/068 ,  H01S5/06825 ,  H01S5/141 ,  H01S5/183

    摘要： Dry oxygen, dry air, or other gases such as ozone are hermetically sealed within the package of the external cavity laser or ASE swept source to avoid packaging-induced failure or PIF. PIF due to hydrocarbon breakdown at optical interfaces with high power densities is believed to occur at the SLED and/or SOA facets as well as the tunable Fabry-Perot reflector/filter elements and/or output fiber. Because the laser is an external cavity tunable laser and the configuration of the ASE swept sources, the power output can be low while the internal power at surfaces can be high leading to PIF at output powers much lower than the 50 mW.

    摘要翻译： 干氧，干燥空气或其他气体（如臭氧）密封在外腔激光器或ASE扫描源的封装内，以避免包装引起的故障或PIF。 相信在SLED和/或SOA面以及可调谐法布里 - 珀罗反射器/滤波器元件和/或输出光纤处发生由于在具有高功率密度的光学接口处的烃破坏引起的PIF。 因为激光器是外部可调谐激光器和ASE扫频源的配置，所以功率输出可能很低，而表面的内部功率可能很高，导致PIF的输出功率远低于50 mW。

    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER
    5.
    发明申请
    METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LASER 审中-公开
    制造氮化物半导体激光的方法

    公开(公告)号：US20090162962A1

    公开(公告)日：2009-06-25

    申请号：US12325354

    申请日：2008-12-01

    申请人： Yosuke SUZUKI ,  Yasuyuki NAKAGAWA ,  Kyosuke KURAMOTO ,  Takeo SHIRAHAMA

    发明人： Yosuke SUZUKI ,  Yasuyuki NAKAGAWA ,  Kyosuke KURAMOTO ,  Takeo SHIRAHAMA

    IPC分类号： H01L21/02

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/02212 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/028 ,  H01S5/0282 ,  H01S5/0287 ,  H01S5/2201 ,  H01S5/3211

    摘要： The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.

    摘要翻译： 本发明提供一种高可靠性氮化物半导体激光器，其降低了形成在谐振器端面上的氮化物电介质膜的应力，从而减少了在形成氮化物电介质膜期间可能发生的谐振器端面的可能损坏。 根据本发明的制造氮化物半导体激光器的方法使用基于氮化物的III-V族化合物半导体，并且包括以下步骤：（a）在发光和光反射端部上形成氮化物电介质的粘附层 在含有氮气的等离子体中的谐振器的表面; 和（b）在粘附层上形成电介质的低反射和高反射面涂膜。

    Light emitting device
    7.
    发明申请
    Light emitting device 有权
    发光装置

    公开(公告)号：US20050242359A1

    公开(公告)日：2005-11-03

    申请号：US10515141

    申请日：2004-03-16

    申请人： Hiroshi Yoshida ,  Tadashi Taniguchi ,  Takashi Mizuno

    发明人： Hiroshi Yoshida ,  Tadashi Taniguchi ,  Takashi Mizuno

    IPC分类号： H01S5/022 ,  H01L29/22 ,  H01S5/00 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/323

    CPC分类号： H01S5/02212 ,  H01L2224/48091 ,  H01L2224/4826 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/0222 ,  H01S5/02224 ,  H01S5/0226 ,  H01S5/024 ,  H01S5/0683 ,  H01S5/32341 ,  H01L2924/00014

    摘要： A CAN package light emitting device comprises a semiconductor laser 1 bonded on a sub mount 6 and a CAN package 2 for housing the semiconductor laser 1 bonded on the sub mount 6. The CAN package 2 comprises a fixing structure 3 for fixing the semiconductor laser at a predetermined position, and a cap 4 covering the semiconductor laser 1 fixed to the fixing structure 3. Vapor pressure of Si organic compound gas in the CAN package 2 is limited to or below 5.4×102 N/m2 to prevent any deposit as thick as inviting characteristics deterioration from being formed on the light emitting portion of the semiconductor laser 1 within the guaranteed time of its proper operation.

    摘要翻译： CAN封装发光器件包括接合在副安装座6上的半导体激光器1和用于容纳接合在副安装座6上的半导体激光器1的CAN封装2。 CAN封装2包括用于将半导体激光器固定在预定位置的固定结构3和覆盖固定到固定结构3的半导体激光器1的盖4。 CAN封装2中的Si有机化合物气体的蒸汽压力被限制在或低于5.4×10 2 N / m 2以下，以防止任何沉积物像引入特性劣化一样厚 在其正常操作的保证时间内形成在半导体激光器1的发光部分上。

    Packaging of high power semiconductor lasers
    8.
    发明授权
    Packaging of high power semiconductor lasers 失效
    大功率半导体激光器的封装

    公开(公告)号：US5513198A

    公开(公告)日：1996-04-30

    申请号：US168125

    申请日：1993-12-17

    申请人： Paul A. Jakobson

    发明人： Paul A. Jakobson

    IPC分类号： H01L33/48 ,  H01S5/00 ,  H01S5/022 ,  H01S3/18 ,  H01L23/36

    CPC分类号： H01L33/483 ,  H01S5/0021 ,  H01S5/0287 ,  H01L2924/0002 ,  H01S5/02204 ,  H01S5/02224

    摘要： A package for a high power semiconductor laser comprising a hermetically sealed container filled with a dry gaseous medium containing oxygen. The presence of oxygen in the laser atmosphere is counter to standard practice in the art which teaches the use of an atmosphere of a dry inert gas. The package also includes a getter for organic impurities, e.g., a getter composed of a porous silica or a zeolite. The hydrogen content of the materials used to form the package are reduced by baking at an elevated temperature for an extended period of time, e.g., at 150.degree. C. for 200 hours.

    摘要翻译： 一种用于大功率半导体激光器的封装，包括填充有含氧的干燥气态介质的密封容器。 在激光气氛中存在氧与本领域的标准做法相反，该方法教导了使用干燥惰性气体的气氛。 该包装还包括有机杂质的吸气剂，例如由多孔二氧化硅或沸石组成的吸气剂。 用于形成包装的材料的氢含量通过在升高的温度下长时间烘烤（例如在150℃下）减少200小时。