公开(公告)号：US3294975A

公开(公告)日：1966-12-27

申请号：US23464662

申请日：1962-11-01

Applicant: ELECTRO MECHANICAL RES INC

Inventor： FLECK HORST G

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2836755A

公开(公告)日：1958-05-27

申请号：US35411253

申请日：1953-05-11

Applicant: EMI LTD

Inventor： HERMANN SOMMER ALFRED

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2772368A

公开(公告)日：1956-11-27

申请号：US24117651

申请日：1951-08-10

Applicant: PERFORATING GUNS ATLAS CORP

Inventor： SCHERBATSKOY SERGE A

IPC: G01T1/208 ,  H01J43/08

CPC classification number: H01J43/08 ,  G01T1/208

公开(公告)号：US2473031A

公开(公告)日：1949-06-14

申请号：US58831545

申请日：1945-04-14

Applicant: FARNSWORTH RES CORP

Inventor： LARSON CHRISTIAN C

IPC: H01J43/08

CPC classification number: H01J43/08

公开(公告)号：US2207603A

公开(公告)日：1940-07-09

申请号：US27505939

申请日：1939-05-22

Applicant: IG FARBENINDUSTRIE AG

Inventor： HANS WESCHE

IPC: D06M13/438 ,  H01J43/08

CPC classification number: D06M13/438 ,  H01J43/08

公开(公告)号：US2183309A

公开(公告)日：1939-12-12

申请号：US19649638

申请日：1938-03-17

Applicant: FIRM OF FERNSEH AKTIEN GES

Inventor： WERNER FIECHAIG ,  RUDOLF BEHNE

IPC: H01J43/04 ,  H01J43/08

CPC classification number: H01J43/08 ,  H01J43/04 ,  Y10T29/49861

公开(公告)号：US20240274421A1

公开(公告)日：2024-08-15

申请号：US18109388

申请日：2023-02-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Yasuyuki EGAWA ,  Atsuhito FUKASAWA ,  Suenori KIMURA ,  Takayasu NAGASAWA ,  Shunsuke KOBAYASHI

IPC: H01J43/28 ,  H01J43/08

CPC classification number: H01J43/28 ,  H01J43/08

Abstract: An electron tube includes a photoelectric conversion unit, an electron detection unit configured to receive a photoelectrons from the photoelectric conversion unit, a gate electrode disposed between the photoelectric conversion unit and the electron detection unit, and a housing configured to accommodate the photoelectric conversion unit, the electron detection unit, and the gate electrode. The housing has a lid portion to which the photoelectric conversion unit is fixed and which constitutes one end side of the housing. The gate electrode includes a main body portion that control passage of the photoelectrons by applying a voltage, and a power supply part that supports the main body portion so as to be spaced apart from the photoelectric conversion unit and applies a voltage to the main body portion. The power supply part is held by the lid portion.

公开(公告)号：US11536604B1

公开(公告)日：2022-12-27

申请号：US16888856

申请日：2020-06-01

Applicant: EL-MUL TECHNOLOGIES LTD.

Inventor： Jonathan Garel ,  Amit Weingarten ,  Semyon Shofman ,  Alexander Kadyshevitch

IPC: G01J1/44 ,  H01J43/08 ,  H01J43/28 ,  H01J37/244 ,  H01J37/28

Abstract: An in-vacuum light sensor system, including a light sensor assembly comprising a photocathode configured for converting an impinging photon to a photoelectron, a semiconductor diode configured for multiplying the photoelectron impinging thereon, and a housing including vacuum-compatible materials configured for being placed in a vacuum chamber. The housing is configured for housing the photocathode and the semiconductor diode and for propagation of the photoelectron from the photocathode to the semiconductor diode. An electrical biasing subassembly is configured for electrically biasing at least the photocathode and the semiconductor diode, and the vacuum chamber is configured for positioning the light sensor apparatus therein.

公开(公告)号：US20210335587A1

公开(公告)日：2021-10-28

申请号：US17222590

申请日：2021-04-05

Applicant: ELBIT SYSTEMS OF AMERICA, LLC

Inventor： Arlynn Walter Smith

IPC: H01J40/06 ,  H01J43/24 ,  H01J43/08 ,  H04N5/33 ,  H04N5/353

Abstract: A night vision system along with an image intensifier tube and method for shuttering the continued draw of electrons from an electron multiplier are provided. The night vision system includes the electron multiplier, or possibly two electron multipliers, each comprising a silicon membrane. A shutter voltage is applied between a first surface and a substantially parallel, opposed second surface of the silicon membrane to discontinue draw of electrons through the electron multiplier and for substantially discontinuing display of an image from the image intensifier tube under certain bright light conditions. Utilizing a global shutter control on the electron multiplier, and the significantly lower voltage for such control mitigates power consumption within the image intensifier, as well as electromagnetic interference and delay response time. A relatively low voltage negative bias shutter voltage on only the electron multiplier selectively provides global shutter to the image intensifier device.

公开(公告)号：US20190189408A1

公开(公告)日：2019-06-20

申请号：US16318858

申请日：2017-06-14

Applicant: Aktsionernoe Obshchestvo "KATOD"

Inventor： Iosif Isaakovich GOL'DBERG ,  Aleksandr Vladimirovich DOLGIKH ,  Vladimir Il'ich LOKTIONOV

IPC: H01J40/06 ,  H01J43/08 ,  H01J31/50

CPC classification number: H01J40/06 ,  H01J31/50 ,  H01J43/08 ,  H01J2201/3423

Abstract: A photocathode assembly of a vacuum photoelectronic device with a semi-transparent photocathode that consists of an input window in the form of a disk made from sapphire, layers of heteroepitaxial structure of gallium nitride compounds as a semi-transparent photocathode grown on the inner surface of the input window, and an element for connecting the input window with a vacuum photoelectronic device housing, which is vacuum-tight fixed on the outer surface of the input window at its periphery. The element for connecting of the input window with the vacuum photoelectronic device housing is made of a bimetal, in which a layer that is not in contact with the outer surface of the input window consists of a material with a temperature coefficient of linear expansion that differs from the temperature coefficient of linear expansion of sapphire by no more than 10% in the temperature range from 20° C. to 200° C.