PROTECTION AGAINST ELECTROSTATIC DISCHARGES
    676.
    发明公开

    公开(公告)号:US20240072037A1

    公开(公告)日:2024-02-29

    申请号:US18231928

    申请日:2023-08-09

    CPC classification number: H01L27/0255 H01L27/0288 H01L27/0296 H01L27/14634

    Abstract: An electronic device includes a doped semiconductor substrate of a first conductivity type. A first doped well of a second conductivity type opposite to the first conductivity type extends into the doped semiconductor substrate from a surface thereof. A second doped well of the first conductivity type is located in the first well. A third electrically-insulating well is located in the second well. A fourth doped well of the first conductivity type is located in the third well. First, second, and third doped regions of the first conductivity type are respectively located in the doped semiconductor substrate, the second doped well and the fourth doped well. The first, second, and third doped regions have doping levels greater than a doping level of the doped semiconductor substrate. A fourth doped region the second conductivity type is located in the fourth doped well adjacent the second doped region.

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