公开(公告)号：US20130163318A1

公开(公告)日：2013-06-27

申请号：US13720232

申请日：2012-12-19

申请人： CROCUS TECHNOLOGY SA

发明人： Ioan Lucian Prejbeanu ,  Kenneth Mackay

IPC分类号： G11C11/16

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329

摘要： The present disclosure concerns a method for writing to a self-referenced MRAM cell comprising a magnetic tunnel junction comprising: a storage layer including a first ferromagnetic layer having a first storage magnetization, a second ferromagnetic layer having a second storage magnetization, and a non-magnetic coupling layer separating the first and second ferromagnetic layers; a sense layer having a free sense magnetization; and a tunnel barrier layer included between the sense and storage layers; the first and second ferromagnetic layers being arranged such that a dipolar coupling between the storage) and the sense layers is substantially null; the method comprising: switching the second ferromagnetic magnetization by passing a spin-polarized current in the magnetic tunnel junction; wherein the spin-polarized current is polarized when passing in the sense layer, in accordance with the direction of the sense magnetization. The MRAM cell can be written with low power consumption.

摘要翻译： 本公开涉及一种用于写入包括磁性隧道结的自参考MRAM单元的方法，包括：存储层，包括具有第一存储磁化的第一铁磁层，具有第二存储磁化的第二铁磁层， 分离第一和第二铁磁层的磁耦合层; 具有自由感知磁化的感测层; 以及包括在感测层和存储层之间的隧道势垒层; 所述第一和第二铁磁层布置成使得所述存储器之间的偶极耦合）和所述感测层基本上为零; 该方法包括：通过使磁性隧道结中的自旋极化电流通过来切换第二铁磁性磁化; 其中根据感测磁化的方向，当在感测层中通过时，自旋极化电流被极化。 MRAM单元可以写入低功耗。

公开(公告)号：US20120250391A1

公开(公告)日：2012-10-04

申请号：US13430963

申请日：2012-03-27

申请人： Bertrand Cambou

发明人： Bertrand Cambou

IPC分类号： G11C11/22

CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

摘要： The present disclosure concerns a MRAM cell comprising a first tunnel barrier layer comprised between a soft ferromagnetic layer having a free magnetization and a first hard ferromagnetic layer having a first storage magnetization; a second tunnel barrier layer comprised between the soft ferromagnetic layer and a second hard ferromagnetic layer having a second storage magnetization; the first storage magnetization being freely orientable at a first high predetermined temperature threshold and the second storage magnetization being freely orientable at a second predetermined high temperature threshold; the first high predetermined temperature threshold being higher than the second predetermined high temperature threshold. The MRAM cell can be used as a ternary content addressable memory (TCAM) and store up to three distinct state levels. The MRAM cell has a reduced size and can be made at low cost.

摘要翻译： 本公开涉及一种MRAM单元，其包括第一隧道势垒层，其包括具有自由磁化的软铁磁层和具有第一存储磁化的第一硬铁磁层; 第二隧道势垒层，包括在所述软铁磁层和具有第二存储磁化的第二硬铁磁层之间; 所述第一存储磁化可在第一高预定温度阈值自由定向，并且所述第二存储磁化可自由地定向在第二预定高温阈值; 第一高预定温度阈值高于第二预定高温阈值。 MRAM单元可用作三元内容可寻址存储器（TCAM），并存储多达三个不同的状态级别。 MRAM电池具有减小的尺寸并且可以以低成本制造。

公开(公告)号：US08228716B2

公开(公告)日：2012-07-24

申请号：US12872873

申请日：2010-08-31

申请人： Jean-Pierre Nozières ,  Ioan Lucian Prejbeanu

发明人： Jean-Pierre Nozières ,  Ioan Lucian Prejbeanu

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C11/1675

摘要： Magnetic element with thermally-assisted magnetic-field writing or thermally-assisted spin-transfer writing, comprising: a reference magnetic layer having a fixed direction magnetization; a storage magnetic layer exchange-pinned with an antiferromagnetic layer, wherein the magnetization direction of the storage layer can vary when said element can be heated to a temperature at least higher than a critical temperature of the antiferromagnetic layer; a tunnel barrier, provided between the reference layer and the storage layer; wherein the magnetic reference layer, and/or the magnetic storage layer includes at least one electrically-resistive thin layer for heating the magnetic element. The magnetic element disclosed herein has a voltage gain of typically 10 to 50% compared to conventional magnetic elements and shows a reduction of the stress induced during a writing operation as well as a reduction of the aging.

摘要翻译： 具有热辅助磁场写入或热辅助自旋转移写入的磁性元件，包括：具有固定方向磁化的参考磁性层; 与反铁磁层交换固定的存储磁性层，其中当所述元件可被加热到至少高于反铁磁性层的临界温度的温度时，存储层的磁化方向可以变化; 设置在参考层和存储层之间的隧道势垒; 其中所述磁参考层和/或所述磁存储层包括用于加热所述磁性元件的至少一个电阻薄层。 本文公开的磁性元件与常规磁性元件相比具有典型的10至50％的电压增益，并且显示了在写入操作期间引起的应力的减小以及老化的减少。

公开(公告)号：US08228702B2

公开(公告)日：2012-07-24

申请号：US12821284

申请日：2010-06-23

申请人： Virgile Javerliac ,  Mourad El Baraji

发明人： Virgile Javerliac ,  Mourad El Baraji

IPC分类号： G11C15/00 ,  G11C15/02 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C15/02 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/046

摘要： The present disclosure concerns a magnetic random access memory-based ternary content addressable memory cell, comprising a first and second magnetic tunnel junction respectively connected to a first and second straps extending on each side of the first and second magnetic tunnel junctions, respectively; a first and second selection transistors, respectively connected to one extremity of the first and second straps; a first and second current lines; and a conductive line electrically connecting in series the first and second magnetic tunnel junctions at their ends opposed to the ones connecting the first and second straps. The cell disclosed herein has smaller size and can be advantageously used in memory devices having a high cell density array.

摘要翻译： 本公开涉及一种基于磁性随机存取存储器的三元内容可寻址存储单元，包括分别连接到在第一和第二磁性隧道结的每一侧延伸的第一和第二条带的第一和第二磁性隧道结; 分别连接到第一和第二带的一个末端的第一和第二选择晶体管; 第一和第二条电流线; 以及导电线，其在与连接第一和第二带的那些相对的端部串联电连接第一和第二磁性隧道结。 本文公开的电池具有较小的尺寸，并且可以有利地用于具有高电池密度阵列的存储器件中。

公开(公告)号：US20120155159A1

公开(公告)日：2012-06-21

申请号：US13326439

申请日：2011-12-15

申请人： Ioan Lucian Prejbeanu

发明人： Ioan Lucian Prejbeanu

IPC分类号： G11C11/16

CPC分类号： G11C11/16 ,  G11C11/5607 ,  G11C11/5685 ,  G11C13/0002

摘要： A magnetic random access memory (MRAM) cell including a magnetic tunnel junction including a tunnel barrier layer between a first magnetic layer having a first magnetization direction, and a second magnetic layer having a second adjustable magnetization to vary a junction resistance of the magnetic tunnel junction from a first to a second junction resistance level; said magnetic tunnel junction further including a switching resistant element electrically connected to the magnetic tunnel junction and having a switching resistance switchable from a first to a second switching resistance level when a switching current is passed through the switching resistant element, such that a resistance of the MRAM cell can have at least four different cell resistance levels depending of the resistance level of the junction resistance and the switching resistance. The disclosed MRAM cell achieves improved read margin and allows for writing at least four different cell resistance levels.

摘要翻译： 一种磁性随机存取存储器（MRAM）单元，包括在具有第一磁化方向的第一磁性层之间包括隧道阻挡层的磁性隧道结和具有第二可调磁化的第二磁性层，以改变磁性隧道结的结电阻 从第一到第二结阻水平; 所述磁性隧道结还包括电连接到磁性隧道结的切换电阻元件，并且具有当开关电流通过开关电阻元件时从第一开关电阻电平切换到第二开关电阻电平的开关电阻，使得 取决于结电阻和开关电阻的电阻水平，MRAM单元可以具有至少四个不同的电池电阻水平。 所公开的MRAM单元实现了改善的读取余量并且允许写入至少四个不同的单元电阻级别。

公开(公告)号：US20120143889A1

公开(公告)日：2012-06-07

申请号：US13309369

申请日：2011-12-01

申请人： Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

发明人： Bertrand F. Cambou ,  Neal Berger ,  Mourad El Baraji

IPC分类号： G06F17/30

CPC分类号： G06F11/08 ,  G06F7/02 ,  G06F2207/025 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607 ,  G11C15/02 ,  G11C15/046

摘要： A check engine includes a plurality of comparators each including a first directional characteristic aligned to store at least one reference bit included in a set of reference bits, and a second directional characteristic aligned to present at least one target bit included in a set of target bits. Each of the plurality of comparators is configured to produce an output representing a level of matching between the at least one target bit and the at least one reference bit, based on a relative alignment between the first directional characteristic and the second directional characteristic. The check engine is configured such that the outputs of the plurality of comparators are combined to produce a combined output. The check engine is configured to determine that the set of target bits matches the set of reference bits based on the combined output of the plurality of comparators.

摘要翻译： 检查引擎包括多个比较器，每个比较器包括对齐以存储包括在一组参考比特中的至少一个参考比特的第一方向特性，以及对准以呈现包括在一组目标比特中的至少一个目标比特的第二方向特性 。 多个比较器中的每一个被配置为基于第一方向特性和第二方向特性之间的相对对准来产生表示所述至少一个目标位和所述至少一个参考位之间的匹配水平的输出。 检查引擎被配置为使得多个比较器的输出被组合以产生组合输出。 检查引擎被配置为基于多个比较器的组合输出来确定目标比特的集合与参考比特集匹配。

公开(公告)号：US08102703B2

公开(公告)日：2012-01-24

申请号：US12502467

申请日：2009-07-14

申请人： Jean-Pierre Nozières ,  Bernard Dieny

发明人： Jean-Pierre Nozières ,  Bernard Dieny

IPC分类号： G11C11/15

CPC分类号： G11C11/161

摘要： A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.

摘要翻译： 包括具有固定磁化方向的参考层的磁性隧道结，具有通过使写入电流通过所述磁性隧道结而相对于参考层的磁化方向可调节的磁化方向的第一存储层和绝缘层 设置在所述参考层和第一存储层之间; 其特征在于，所述磁性隧道结还包括偏振装置，用于使写入电流的自旋极化，所述写入电流的自旋垂直于参考层的磁化方向; 并且其中所述第一存储层具有高于0.02的阻尼常数。 可以制造通过组装磁性隧道结的阵列而形成的磁存储器件，从而降低功耗。

公开(公告)号：US07894228B2

公开(公告)日：2011-02-22

申请号：US12422752

申请日：2009-04-13

申请人： Jean-Pierre Nozieres ,  Virgile Javerliac

发明人： Jean-Pierre Nozieres ,  Virgile Javerliac

IPC分类号： G11C15/02

CPC分类号： G11C15/046 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/02

摘要： A content-addressable random access memory having magnetic tunnel junction-based memory cells and methods for making and using same. The magnetic tunnel junction has first and second magnetic layers and can act as a data store and a data sense. Within each cell, registered data is written by setting a magnetic orientation of the first magnetic layer in the magnetic tunnel junction via current pulses in one or more current lines. Input data for comparison with the registered data can be similarly set through the magnetic orientation of the second magnetic layer via the current lines. The data sense is performed by measuring cell resistance, which depends upon the relative magnetic orientation of the magnetic layers. Since data storage, data input, and data sense are integrated into one cell, the memory combines higher densities with non-volatility. The memory can support high speed, reduced power consumption, and data masking.

摘要翻译： 一种具有磁性隧道结的存储单元的内容寻址随机存取存储器及其制造和使用方法。 磁隧道结具有第一和第二磁性层，并且可以用作数据存储和数据感测。 在每个单元内，通过在一个或多个电流线路中经由电流脉冲设置磁性隧道结中的第一磁性层的磁性取向来写入登记数据。 用于与登记数据进行比较的输入数据可以通过第二磁性层经由电流线的磁取向相似地设定。 数据检测通过测量电池电阻来执行，这取决于磁性层的相对磁性取向。 由于数据存储，数据输入和数据检测被集成到一个单元中，存储器将较高密度与非易失性相结合。 内存可以支持高速，降低功耗和数据屏蔽。

公开(公告)号：US20110007561A1

公开(公告)日：2011-01-13

申请号：US12832472

申请日：2010-07-08

申请人： Neal Berger ,  Jean-Pierre Nozieres

发明人： Neal Berger ,  Jean-Pierre Nozieres

IPC分类号： G11C11/14 ,  G11C7/00

CPC分类号： G11C11/1675 ,  G11C11/16 ,  G11C11/1673

摘要： The present disclosure concerns a magnetic random access memory cell containing a magnetic tunnel junction formed from an insulating layer comprised between a sense layer and a storage layer. The present disclosure also concerns a method for writing and reading the memory cell comprising, during a write operation, switching a magnetization direction of said storage layer to write data to said storage layer and, during a read operation, aligning magnetization direction of said sense layer in a first aligned direction and comparing said write data with said first aligned direction by measuring a first resistance value of said magnetic tunnel junction. The disclosed memory cell and method allow for performing the write and read operations with low power consumption and an increased speed.

摘要翻译： 本公开涉及一种磁性随机存取存储单元，其包含由包括感测层和存储层之间的绝缘层形成的磁性隧道结。 本公开还涉及一种用于写入和读取存储单元的方法，包括在写入操作期间切换所述存储层的磁化方向以将数据写入所述存储层，并且在读取操作期间，对准所述感测层的磁化方向 在第一对准方向上，并且通过测量所述磁性隧道结的第一电阻值来比较所述写入数据与所述第一对准方向。 所公开的存储单元和方法允许以低功耗和增加的速度执行写入和读取操作。

公开(公告)号：US20110002151A1

公开(公告)日：2011-01-06

申请号：US12821284

申请日：2010-06-23

申请人： Virgile Javerliac ,  Mourad El Baraji

发明人： Virgile Javerliac ,  Mourad El Baraji

IPC分类号： G11C15/02

CPC分类号： G11C15/02 ,  G11C11/1673 ,  G11C11/1675 ,  G11C15/046

摘要： The present disclosure concerns a magnetic random access memory-based ternary content addressable memory cell, comprising a first and second magnetic tunnel junction respectively connected to a first and second straps extending on each side of the first and second magnetic tunnel junctions, respectively; a first and second selection transistors, respectively connected to one extremity of the first and second straps; a first and second current lines; and a conductive line electrically connecting in series the first and second magnetic tunnel junctions at their ends opposed to the ones connecting the first and second straps. The cell disclosed herein has smaller size and can be advantageously used in memory devices having a high cell density array.

摘要翻译： 本公开涉及一种基于磁性随机存取存储器的三元内容可寻址存储单元，包括分别连接到在第一和第二磁性隧道结的每一侧延伸的第一和第二条带的第一和第二磁性隧道结; 分别连接到第一和第二带的一个末端的第一和第二选择晶体管; 第一和第二条电流线; 以及导电线，其在与连接第一和第二带的那些相对的端部串联电连接第一和第二磁性隧道结。 本文公开的电池具有较小的尺寸，并且可以有利地用于具有高电池密度阵列的存储器件中。