公开(公告)号：US11268659B2

公开(公告)日：2022-03-08

申请号：US16888004

申请日：2020-05-29

申请人： EPISTAR CORPORATION

发明人： Wei-Chiang Hu ,  Keng-Chuan Chang ,  Chiu-Lin Yao ,  Chun-Wei Lin ,  Jung-Chang Sun

IPC分类号： F21K9/23 ,  F21K9/00 ,  F21V19/00 ,  F21Y105/10 ,  F21Y115/10

摘要： A lighting apparatus comprises: a board, a plurality of light-emitting units disposed on the board, and a package structure enclosing all of the light-emitting units and having a volume less than 5000 mm3. The lighting apparatus has a light intensity greater than 150 lumens.

公开(公告)号：US11255524B2

公开(公告)日：2022-02-22

申请号：US16887948

申请日：2020-05-29

申请人： EPISTAR CORPORATION

发明人： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC分类号： F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21K9/232 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L23/00 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10

摘要： A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 μm and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

公开(公告)号：US11251340B2

公开(公告)日：2022-02-15

申请号：US16749536

申请日：2020-01-22

申请人： EPISTAR CORPORATION

发明人： Heng-Ying Cho ,  De-Shan Kuo

IPC分类号： H01L33/46 ,  H01L33/10 ,  H01L33/60 ,  H01L33/50

摘要： A light-emitting device includes a substrate, having a first surface and second surface opposite to the first surface; a light-emitting stack, formed on the first surface of the substrate, the light-emitting stack including a first semiconductor layer, an active layer and a second semiconductor layer, wherein the active layer is formed between the first conductive semiconductor layer and the second conductive semiconductor layer; and a distributed Bragg reflection structure (DBR), formed on the second surface of the substrate, including a plurality of dielectric-layer pair formed sequentially on the second surface, wherein each of the dielectric-layer pairs includes respectively a first dielectric layer having a first optical thickness and a second dielectric layer having a second optical thickness, and wherein from the second surface, the first dielectric layer of each of the dielectric-layer pairs is thicker than the first dielectric layer of the adjacent previous dielectric-layer pair.

公开(公告)号：US20210408311A1

公开(公告)日：2021-12-30

申请号：US17364175

申请日：2021-06-30

申请人： EPISTAR CORPORATION

发明人： Chu-Jih SU ,  Chia-Hsiang CHOU ,  Wei-Chih PENG ,  Wen-Luh LIAO ,  Chao-Shun HUANG ,  Hsuan-Le LIN ,  Shih-Chang LEE ,  Mei Chun LIU ,  Chen OU

IPC分类号： H01L31/055 ,  H01L31/0224 ,  H01L31/0304 ,  H01L31/12 ,  H01L25/16 ,  H01L31/101

摘要： A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 Å and smaller than 1000 Å.

公开(公告)号：US20210408310A1

公开(公告)日：2021-12-30

申请号：US16917223

申请日：2020-06-30

申请人： EPISTAR CORPORATION

发明人： Chu-Jih Su ,  Chao-Shun Huang ,  Shiuan-Leh Lin ,  Shih-Chang Lee ,  Wen-Luh Liao ,  Mei-Chun Liu

IPC分类号： H01L31/055 ,  H01L31/0304 ,  H01L31/0224 ,  H01L25/16

摘要： A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

公开(公告)号：US20210351761A1

公开(公告)日：2021-11-11

申请号：US17308146

申请日：2021-05-05

申请人： EPISTAR CORPORATION

发明人： Wei-Tsuen YE ,  Ta-Cheng HSU ,  Wei-Shou CHEN ,  Chung-Jen CHUNG

IPC分类号： H03H9/17 ,  H03H3/02 ,  H03H9/02

摘要： A method for forming an acoustic wave device, including steps of: forming an acoustic wave sensing part and an acoustic wave reflecting part, wherein the step of forming the acoustic wave sensing part includes: providing a first substrate, forming a sensing layer on the first substrate, forming a bottom electrode on a side of the sensing layer, and forming a filling layer on the sensing layer and the bottom electrode; and wherein the step of forming the acoustic wave reflecting part includes: providing a second substrate, forming a reflecting element on the second substrate, and forming a cover layer on the reflecting element; joining the acoustic wave sensing part and the acoustic wave reflecting part; removing the first substrate; and forming a top electrode on another side of the sensing layer, wherein the bottom electrode, the top electrode and the reflecting element are arranged correspondingly to each other.

公开(公告)号：US20210343906A1

公开(公告)日：2021-11-04

申请号：US17306136

申请日：2021-05-03

申请人： EPISTAR CORPORATION

发明人： Hsin-Ying WANG ,  Chih-Hao CHEN ,  Chien-Chih LIAO ,  Chao-Hsing CHEN ,  Wu-Tsung LO ,  Tsun-Kai KO ,  Chen OU

IPC分类号： H01L33/46 ,  H01L33/60 ,  H01L33/38

摘要： A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

公开(公告)号：US11158618B2

公开(公告)日：2021-10-26

申请号：US16657574

申请日：2019-10-18

申请人： National Tsing Hua University ,  EPISTAR CORPORATION

发明人： Meng-Chyi Wu ,  Jyun-Hao Liao ,  Hsiang-Hui Wang

IPC分类号： H01L25/16 ,  H01L23/00

摘要： A light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. Each of the light-emitting unit and the photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the photoelectric conversion unit with the light-emitting unit. When the photoelectric conversion device is operated to receive a bias and an external light, the light-emitting unit generates a modulated light different from the external light in frequency.

公开(公告)号：US20210313388A1

公开(公告)日：2021-10-07

申请号：US17348080

申请日：2021-06-15

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing CHEN ,  I-Lun MA ,  Bo-Jiun HU ,  Yu-Ling LIN ,  Chien-Chih LIAO

IPC分类号： H01L27/15 ,  H01L33/24 ,  H01L33/38

摘要： A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first light-emitting unit and connected to the first semiconductor layer formed in the first opening, a second connecting part on the second light-emitting unit and connected to the second semiconductor layer of the second light-emitting unit, and a third connecting part formed in the trench to connect the first connecting part and the second connecting part.

公开(公告)号：US11139279B2

公开(公告)日：2021-10-05

申请号：US16389263

申请日：2019-04-19

申请人： EPISTAR CORPORATION

发明人： Chia-Liang Hsu

IPC分类号： H01L33/22 ,  H01L33/58 ,  H01L33/50 ,  H01L25/075 ,  F21V8/00 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62

摘要： A light-emitting diode includes a transparent substrate with a first surface, a second surface opposite to the first surface, and a side surface connected to the first surface and the second surface; a first light-emitting structure; a second light-emitting structure; a connecting layer, connected to the first light-emitting structure and the second light-emitting structure; a circuit arranged between the transparent substrate and the first light-emitting structure, and having a portion formed on the first surface without extending to the second surface; and a structure with diffusers, covering the first light-emitting structure and the second light-emitting structure on the first surface without crossing over the side surface.