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    Light-emitting device having a patterned substrate and the method thereof
    1.
    发明授权
    Light-emitting device having a patterned substrate and the method thereof 有权

    公开(公告)号：US10374125B2

    公开(公告)日：2019-08-06

    申请号：US16049337

    申请日：2018-07-30

    申请人： EPISTAR CORPORATION

    发明人： Ta-Cheng Hsu ,  Ching-Shian Yeh ,  Chao-Shun Huang ,  Ying-Yong Su ,  Ya-Lan Yang ,  Ya-Ju Lee

    IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/32

    摘要： A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.

    LIGHT-EMITTING DEVICE HAVING A PATTERNED SUBSTRATE AND THE METHOD THEREOF
    3.
    发明申请
    LIGHT-EMITTING DEVICE HAVING A PATTERNED SUBSTRATE AND THE METHOD THEREOF 有权
    具有图案基板的发光装置及其方法

    公开(公告)号：US20160118538A1

    公开(公告)日：2016-04-28

    申请号：US14986791

    申请日：2016-01-04

    申请人： EPISTAR CORPORATION

    发明人： Ta-Cheng HSU ,  Ya-Lan Yan ,  Ying-Yong SU ,  Ching-Shian YEH ,  Chao-Shun Huang ,  Ya-Ju Lee

    IPC分类号： H01L33/22 ,  H01L33/32

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/32

    摘要： A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.

    摘要翻译： 发光装置包括包含多个纹理结构的纹理化衬底，其中纹理结构和纹理化衬底都由蓝宝石构成; 以及覆盖所述纹理化衬底的发光堆叠，包括第一导电类型半导体层，有源层和第二导电类型半导体层，其中所述多个纹理结构中的每一个包括具有第一顶视形状的顶部 以及平行于顶部并具有第二顶视图形状的底部部分，其中第一顶视图形状包括圆形或椭圆形，第一顶视图形状包括第一周边和第二顶视图形状 包括第二周边，第一周边由第二周边包围，并且在第一周边和第二周边之间各个距离。

    Photodetector with modified region in barrier and absorption structures
    7.
    发明授权
    Photodetector with modified region in barrier and absorption structures 有权

    公开(公告)号：US11935969B2

    公开(公告)日：2024-03-19

    申请号：US17092674

    申请日：2020-11-09

    申请人： EPISTAR CORPORATION

    发明人： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

    IPC分类号： H01L31/0216 ,  H01L31/0203

    CPC分类号： H01L31/02162 ,  H01L31/0203

    摘要： A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

    Photodetector
    8.
    发明申请
    Photodetector 有权

    公开(公告)号：US20210151612A1

    公开(公告)日：2021-05-20

    申请号：US17092674

    申请日：2020-11-09

    申请人： EPISTAR CORPORATION

    发明人： Shih-Chang Lee ,  Shiuan-Leh Lin ,  I-Hung Chen ,  Chu-Jih Su ,  Chao-Shun Huang

    IPC分类号： H01L31/0216 ,  H01L31/0203

    摘要： A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

    Light-emitting device having a patterned substrate and the method thereof
    9.
    发明授权
    Light-emitting device having a patterned substrate and the method thereof 有权

    公开(公告)号：US10886433B2

    公开(公告)日：2021-01-05

    申请号：US16453520

    申请日：2019-06-26

    申请人： EPISTAR CORPORATION

    发明人： Ta-Cheng Hsu ,  Ching-Shian Yeh ,  Chao-Shun Huang ,  Ying-Yong Su ,  Ya-Lan Yang ,  Ya-Ju Lee

    IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/32

    摘要： A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.

    Light-emitting device having a patterned substrate and the method thereof
    10.
    发明授权
    Light-emitting device having a patterned substrate and the method thereof 有权

    公开(公告)号：US09780259B2

    公开(公告)日：2017-10-03

    申请号：US14986791

    申请日：2016-01-04

    申请人： EPISTAR CORPORATION

    发明人： Ta-Cheng Hsu ,  Ya-Lan Yang ,  Ying-Yong Su ,  Ching-Shian Yeh ,  Chao-Shun Huang ,  Ya-Ju Lee

    IPC分类号： H01L33/00 ,  H01L33/22 ,  H01L33/32

    CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/32

    摘要： A light-emitting device comprises a textured substrate comprising a plurality of textured structures, wherein the textured structures and the textured substrate are both composed of sapphire; and a light-emitting stack overlaying the textured substrate, comprising a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, wherein each of the plurality of textured structures comprises a top portion having a first top-view shape, and a bottom portion parallel to the top portion and having a second top-view shape, wherein the first top-view shape comprises a circle or an ellipse, the first top-view shape comprises a first periphery and the second top-view shape comprises a second periphery, the first periphery is enclosed by the second periphery, and various distances are between each of the first periphery and the second periphery.