公开(公告)号：US10247395B2

公开(公告)日：2019-04-02

申请号：US15663125

申请日：2017-07-28

申请人： EPISTAR CORPORATION

发明人： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC分类号： F21V21/00 ,  H01L33/50 ,  F21K9/232 ,  F21V21/14 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075

摘要： The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

公开(公告)号：US11255524B2

公开(公告)日：2022-02-22

申请号：US16887948

申请日：2020-05-29

申请人： EPISTAR CORPORATION

发明人： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC分类号： F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21K9/232 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L23/00 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10

摘要： A light-emitting device including a substrate with a top surface and a bottom surface opposite to the top surface and a plurality of LED chips disposed on the top surface and configured to generate a top light visible above the top surface and a bottom light visible beneath the bottom surface, each LED chip comprising a plurality of light-emitting surfaces. The substrate has a thickness greater than 200 μm and comprises aluminum oxide, sapphire, glass, plastic, or rubber. The plurality of LED chips has an incident light with a wavelength of 420-470 nm. The top light and the bottom light have a color temperature difference of not greater than 1500K.

公开(公告)号：US10670244B2

公开(公告)日：2020-06-02

申请号：US16365115

申请日：2019-03-26

申请人： EPISTAR CORPORATION

发明人： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC分类号： F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L23/00 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10

摘要： The present invention relates to a light emitting device comprising a transparent substrate which light can pass through and at least one LED chip emitting light omni-directionally. Wherein the LED chip is disposed on one surface of the substrate and the light emitting angle of the LED chip is wider than 180°, and the light emitted by the LED chip will penetrate into the substrate and at least partially emerge from another surface of the substrate. According to the present invention, the light emitting device using LED chips can provide sufficient lighting intensity and uniform lighting performance.

公开(公告)号：US20180342650A1

公开(公告)日：2018-11-29

申请号：US16051884

申请日：2018-08-01

申请人： EPISTAR CORPORATION

发明人： Cheng-Kuang Yang ,  Hui-Ching Feng ,  Chien-Pin Hsu ,  Kuo-Hui Yu ,  Shyi-Ming Pan

IPC分类号： H01L33/46 ,  H01L33/38 ,  H01L33/62 ,  H01L33/08 ,  H01L33/40

摘要： A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

公开(公告)号：US10074777B2

公开(公告)日：2018-09-11

申请号：US14469593

申请日：2014-08-27

申请人： Epistar Corporation

发明人： Cheng-Kuang Yang ,  Hui-Ching Feng ,  Chien-Pin Hsu ,  Kuo-Hui Yu ,  Shyi-Ming Pan

IPC分类号： H01L33/08 ,  H01L33/38 ,  H01L33/40 ,  H01L33/46 ,  H01L33/62

CPC分类号： H01L33/46 ,  H01L33/08 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62

摘要： A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.

公开(公告)号：US11808436B2

公开(公告)日：2023-11-07

申请号：US17651891

申请日：2022-02-21

申请人： EPISTAR CORPORATION

发明人： Chi-Chih Pu ,  Chen-Hong Lee ,  Shih-Yu Yeh ,  Wei-Kang Cheng ,  Shyi-Ming Pan ,  Siang-Fu Hong ,  Chih-Shu Huang ,  Tzu-Hsiang Wang ,  Shih-Chieh Tang ,  Cheng-Kuang Yang

IPC分类号： F21V21/14 ,  H01L33/50 ,  H01L33/48 ,  H01L33/44 ,  F21K9/232 ,  F21V21/00 ,  H01L25/075 ,  F21V29/85 ,  F21V3/02 ,  F21V17/10 ,  F21V23/06 ,  H01L33/00 ,  F21Y107/00 ,  F21Y115/10 ,  H01L23/00

CPC分类号： F21V21/14 ,  F21K9/232 ,  F21V3/02 ,  F21V17/10 ,  F21V21/00 ,  F21V23/06 ,  F21V29/85 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/508 ,  F21Y2107/00 ,  F21Y2115/10 ,  H01L24/14 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L33/007 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49107 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/45147 ,  H01L2924/00 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48465 ,  H01L2224/48091 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/73265 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/73204 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2924/00 ,  H01L2924/01322 ,  H01L2924/00 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/00011 ,  H01L2924/01015 ,  H01L2224/48465 ,  H01L2224/48227 ,  H01L2924/00

摘要： A light emitting apparatus, including: a first light emitting device with a first substrate having a first upper surface and first bottom surface, a plurality of first LED chips disposed on the first upper surface, emitting a light penetrating the first substrate, and a first wavelength conversion layer directly contacting the plurality of first LED chips and first upper surface, and a first shape in a cross-sectional view; a second wavelength conversion layer directly contacting the first bottom surface; a second shape in the cross-sectional view substantially the same as the first shape; a second light emitting device separated from the first light emitting device, including a second substrate and plurality of second LEDs disposed on the second substrate; a support base connected to the first light emitting device by a first angle and connected to the second light emitting device by a second angle; and a first support arranged between the support base and first light emitting device.

公开(公告)号：US10658547B2

公开(公告)日：2020-05-19

申请号：US16051884

申请日：2018-08-01

申请人： EPISTAR CORPORATION

发明人： Cheng-Kuang Yang ,  Hui-Ching Feng ,  Chien-Pin Hsu ,  Kuo-Hui Yu ,  Shyi-Ming Pan

IPC分类号： H01L33/46 ,  H01L33/62 ,  H01L33/08 ,  H01L33/38 ,  H01L33/40

摘要： A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.