公开(公告)号：US4687722A

公开(公告)日：1987-08-18

申请号：US946092

申请日：1986-12-23

申请人： Kyosuke Ogawa

发明人： Kyosuke Ogawa

IPC分类号： G03G5/00 ,  G03G5/043 ,  G03G5/08 ,  G03G5/082 ,  H01L31/0248 ,  G03G5/14

CPC分类号： G03G5/0436 ,  G03G5/08221 ,  G03G5/08278

摘要： An image holding member which contains a photosensitive layer of photoconductive material and an amorphous film overlayer containing at least silicon atoms, hydrogen atoms and carbon atoms as main components, wherein the amorphous film is formed by discharge in a gaseous atmosphere of organohydrogenosilane is disclosed.

摘要翻译： 公开了一种图像保持部件，其包含光电导材料的感光层和至少含有硅原子，氢原子和碳原子作为主要成分的非晶膜覆层，其中通过在有机氢硅烷的气体气氛中放电而形成非晶膜。

公开(公告)号：US4452875A

公开(公告)日：1984-06-05

申请号：US464881

申请日：1983-02-08

申请人： Kyosuke Ogawa ,  Shigeru Shirai ,  Junichiro Kanbe ,  Keishi Saitoh ,  Yoichi Osato ,  Teruo Misumi

发明人： Kyosuke Ogawa ,  Shigeru Shirai ,  Junichiro Kanbe ,  Keishi Saitoh ,  Yoichi Osato ,  Teruo Misumi

IPC分类号： G03G5/14 ,  G03G5/082

CPC分类号： G03G5/14

摘要： A photoconductive member comprises a support for a photoconductive member, an interface layer comprising an amorphous material containing silicon atoms and nitrogen atoms as constituent atoms, a rectifying layer comprising an amorphous material containing atoms (A) belonging to the group III or the group V of the periodic table as constituent atoms in a matrix of silicon atoms, a first amorphous layer exhibiting photoconductivity and comprising an amorphous material containing at least one member selected from the group consisting of hydrogen atoms and halogen atoms as constituent atoms in a matrix of silicon atoms, and a second amorphous layer containing an amorphous material represented by any of the formulas:Si.sub.a C.sub.1-a (0.4

摘要翻译： 感光体包括用于感光体的支撑体，界面层，其包含含有硅原子和氮原子作为构成原子的无定形材料，整流层包含含有属于III族或第Ⅴ族的原子（A）的无定形物质 作为硅原子的基质中的构成原子的周期表，具有光电导性的第一非晶层，并且包含含有选自硅原子的基质中的氢原子和卤素原子作为构成原子的至少一种的无定形材料， 以及含有由下式中的任何一种表示的无定形材料的第二非晶层：SiaC1-a（0.4

公开(公告)号：US4450185A

公开(公告)日：1984-05-22

申请号：US353186

申请日：1982-03-01

申请人： Isamu Shimizu ,  Kyosuke Ogawa ,  Eiichi Inoue

发明人： Isamu Shimizu ,  Kyosuke Ogawa ,  Eiichi Inoue

IPC分类号： C23C16/24 ,  C23C16/44 ,  C23C16/503 ,  G03G5/08 ,  G03G5/082 ,  H01L31/20 ,  H01L45/00

CPC分类号： C23C16/503 ,  G03G5/08278 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a deposition film on a substrate comprising introducing a deposition film forming material in gaseous state into a deposition chamber, the inside pressure of which is reduced, and causing an electric discharge to take place in a gaseous atmosphere of said deposition film forming material, said process comprising introducing a starting material in gaseous state for preparing said deposition film forming material into a discharge reaction chamber, causing a discharge to take place in a gaseous atmosphere of said starting material to give rise to a reaction of said starting material, and introducing the resulting reaction product into said deposition chamber through a transport means connecting said discharge reaction chamber with said deposition chamber, by which the steps including from the step of preparing said deposition film forming material to the step of forming said deposition film are effected continuously.

摘要翻译： 一种在基板上形成沉积膜的方法，包括将气态沉积膜形成材料引入沉积室，其内部压力降低，并且在所述沉积膜形成的气体气氛中发生放电 所述方法包括引入气态原料以将所述沉积膜形成材料制备成放电反应室，使得在所述原料的气态气氛中发生放电，引起所述原料的反应， 并将所得到的反应产物通过连接所述排放反应室与所述沉积室的输送装置引入所述沉积室，通过该输送装置连续地进行包括从制备所述沉积膜形成材料到形成所述沉积膜的步骤的步骤的步骤 。