摘要:
A surface-treated metal body comprises a metal body having a plurality of spherical indent recesses as irregularities formed on the surface, and further having fine irregularities formed in the spherical indent recesses.
摘要:
A process for forming a deposition film on a substrate comprises introducing separately a precursor or activated species formed in a decomposition space (B) and activated species formed in a decomposition space (C), into the deposition space wherein the film is formed on the substrate.
摘要:
A light receiving member has a support and a light receiving layer. The light receiving layer has an inner layer composed of a-Si(Ge,Sn)(H,X) and an outer layer composed of a-Si(H,X) containing neither germanium atoms nor tin atoms. The support has an uneven surface of spherical dimples, each having an inside face provided with minute irregularities.The light receiving member exhibits high photosensitivity in the entire visible region of light; exhibits an excellent matching property with a semiconductor laser and shows quick light response. The member is suited for image formation by using coherent light, free from interference fringe patterns and spots upon reversed development even after repeated use for a long period of time. The member is free from defective images or blurring, shows high density with clear half tones, has a high resolving power, and can provide high quality images.
摘要:
A photoconductive member comprises a support for a photoconductive member and an amorphous layer having photoconductivity and containing an amorphous material comprising silicon atom as a matrix, said amorphous layer having a first layer region containing oxygen atoms and a second layer region containing Group III atoms of the Periodic Table Such that said Group III atoms are continuously distributed in the direction of the layer thickness and enriched at the support side and wherein oxygen is absent from said amorphous layer exclusive of the first layer region, said first layer region being present internally in the support side portion of the amorphous layer, and there being the following relationship:To/T.ltoreq.1where To is the layer thickness of the first layer region and T results from subtracting To from the layer thickness of the amorphous layer.
摘要翻译:感光体包括用于感光体的支撑体和具有光电导性的非晶层,并且含有包含硅原子作为基体的非晶材料,所述非晶层具有含有氧原子的第一层区域和含有氧原子的第三层原子的第二层区域 周期表使得所述III族原子沿着层厚度的方向连续分布并且在支撑侧富集,并且其中不含有第一层区域的所述非晶层中的氧,所述第一层区域存在于支撑体内部 并且具有以下关系:To / T <1其中To为第一层区域的层厚度,T为从非晶层的层厚度减去To的结果。
摘要:
There is provided a light receiving member which comprises a support and a light receiving layer having a photosensitive layer composed of amorphous material containing silicon atoms and at least either germanium atoms or tin atoms and a surface layer, said surface layer being of multi-layered structure having at least an abrasion-resistant layer at the outermost side and a reflection preventive layer in the inside, and said support having a surface provided with irregularities composed of spherical dimples. The light receiving member overcomes all of the problems in the conventional light receiving member comprising a light receiving layer composed of an amorphous silicon and, in particular, effectively prevents the occurrence of interference fringe in the formed images due to the interference phenomenon thereby forming visible images of excellent quality even in the case of using coherent laser beams possible producing interference as a light source.
摘要:
A light-receiving member comprises a substrate having a large number of protruding portions on a surface thereof, each of said protruding portions having at a predetermined cut position a sectional shape comprising a main projection and a subprojection, the main projection and the subprojection overlapping each other, and a light-receiving layer of a multi-layer structure having a first layer comprising an amorphous material containing silicon atoms and germanium atoms and a second layer comprising an amorphous material containing silicon atoms and exhibiting photoconductivity provided on said substrate successively from the substrate side.
摘要:
A light receiving member comprises a light receiving layer of a multi-layer structure having at least one photosensitive layer comprising an amorphous material containing silicon atoms on a substrate, said photosensitive layer having at least one pair of non-parallel interfaces within a short range and said non-parallel interfaces being arranged in a large number in at least one direction within a plane perpendicular to the layer thickness direction.
摘要:
A vacuum processing apparatus for applying a vacuum working process to a substrate to be processed by a plurality of processing steps comprises vacuum containers exclusively for use for processing disposed in place for each of the processing steps, and a vacuum container exclusively for use for conveyance movable between the vacuum containers exclusively for use for processing. The vacuum containers are provided with opening-closing gates which can be connected to each other. The substrate to be processed is transferably movable between the vacuum containers exclusively for use for processing and the vacuum container exclusively for use for conveyance.
摘要:
A photoconductive member comprises a support for photoconductive member and an amorphous layer comprising an amorphous material containing silicon atoms as a matrix and exhibiting photoconductivity, said amorphous layer having a first layer region containing, as constituent atoms, oxygen atoms and a second layer region containing, as constituent atoms, the atoms belonging to the group V of the periodic table in a distribution which is continuous in the direction of the layer thickness and more enriched toward the side of said support.
摘要:
A photoconductive member comprises a support and an amorphous layer comprising a first layer region and a second layer region, the first layer region having photoconductivity comprising an amorphous material which comprises silicon atoms as a matrix and at least one member selected from hydrogen atoms and halogen atoms as a constituent, the first layer region having a layer region (I) containing an impurity controlling the electroconductivity type at the support side, and the second layer region comprising an amorphous material comprising at least both silicon and carbon as constituents.